The Effects of Nanometal-Induced Crystallization on the Electrical Characteristics of Bottom-Gate Poly-Si Thin-Film Transistors

2011 ◽  
Vol 11 (7) ◽  
pp. 5612-5617 ◽  
Author(s):  
I-Che Lee ◽  
Po-Yu Yang ◽  
Ming-Jhe Hu ◽  
Jyh-Liang Wang ◽  
Chun-Chien Tsai ◽  
...  
2007 ◽  
Vol 51 (96) ◽  
pp. 241 ◽  
Author(s):  
Woo-Hyun LEE ◽  
Hyun-Mo KOO ◽  
Won-Ju CHO ◽  
Jongwan JUNG ◽  
Soon-Young OH ◽  
...  

2013 ◽  
Vol 811 ◽  
pp. 177-180
Author(s):  
Jyh Liang Wang ◽  
Chun Chien Tsai ◽  
Chuan Chou Hwang ◽  
Tsang Yen Hsieh

High performance and device uniformity n-channel low-temperature poly-silicon (LTPS) bottom-gate (BG) thin film transistors (TFTs) with artificially-controlled lateral grain growth have been performed by excimer laser crystallization (ELC). The BG TFTs (W/L = 1.5 μm/1.5 μm) demonstrate field-effect-mobility of 323 cm2/Vs and high Ion/Ioff of 9.5 × 108. The proposed BG TFTs reveal the superior electrical characteristics, device uniformity, and reliability than conventional top-gate ones.


2017 ◽  
Vol 129 ◽  
pp. 6-9 ◽  
Author(s):  
Sol Kyu Lee ◽  
Ki Hwan Seok ◽  
Hee Jae Chae ◽  
Yong Hee Lee ◽  
Ji Su Han ◽  
...  

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