Size Dependent Anisotropic Strain and Optical Properties of Strained Si Nanocrystals

2011 ◽  
Vol 11 (10) ◽  
pp. 9215-9221 ◽  
Author(s):  
Soumen Dhara ◽  
P. K. Giri
Nanoscale ◽  
2017 ◽  
Vol 9 (45) ◽  
pp. 17884-17892 ◽  
Author(s):  
Or Ashkenazi ◽  
Doron Azulay ◽  
Isaac Balberg ◽  
Shinya Kano ◽  
Hiroshi Sugimoto ◽  
...  

The electrical and optical properties of semiconductor nanocrystals (NCs) can be controlled, in addition to size and shape, by doping.


1998 ◽  
Vol 507 ◽  
Author(s):  
C. W. White ◽  
S. P. Withrow ◽  
A. Meldrum ◽  
J. D. Budai ◽  
D. M. Hembree ◽  
...  

ABSTRACTSi nanocrystals formed in SiO2 by high-dose ion implantation and annealing give rise to strong optical absorption and intense photoluminescence (PL). The dose dependence of optical absorption provides evidence for size-dependent quantum confinement in the Si nanocrystals. PL peak energies are nearly independent of dose suggesting that surface or interface states play an important role in PL. Estimates of absorption bandgaps in the nanocrystals are given.


2002 ◽  
Vol 737 ◽  
Author(s):  
J. Heitmann ◽  
D. Kovalev ◽  
M. Schmidt ◽  
L.X. Yi ◽  
R. Scholz ◽  
...  

ABSTRACTThe synthesis of nc-Si by reactive evaporation of SiO and subsequent thermal induced phase separation is reported. The size control of nc-Si is realized by evaporation of SiO/SiO2 superlattices. By this method an independent control of crystal size and density is possible. The phase separation of SiO into SiO2 and nc-Si in the limit of ultrathin layers is investigated. Different steps of this phase separation are characterized by photoluminescence, infrared absorption and transmission electron microscopy measurements. The strong room temperature luminescence of nc-Si shows a strong blueshift of the photoluminescence signal from 850 to 750 nm with decreasing crystal size. Several size dependent properties of this luminescence signal, like decreasing radiative lifetime and increasing no-phonon transition properties with decreasing crystal size are in good agreement with the quantum confinement model. Er doping of the nc-Si shows an enhancement of the Er luminescence at 1.54 μm by a factor of 5000 compared to doped SiO2 layers. The decreasing transfer time for the nc-Si to Er transition with decreasing crystal size can be understood as additional proof of increasing recombination probability within the nc-Si for decreasing crystal size.


2009 ◽  
Vol 41 (6) ◽  
pp. 994-997 ◽  
Author(s):  
F. Delachat ◽  
M. Carrada ◽  
G. Ferblantier ◽  
A. Slaoui ◽  
C. Bonafos ◽  
...  

2015 ◽  
Vol 242 ◽  
pp. 383-390
Author(s):  
Md Hosnay Mobarok ◽  
Tapas K. Purkait ◽  
Jonathan G.C. Veinot

The preparation and surface chemistry Si quantum dots (SiQDs) are currently an intense focus of research because of their size dependent optical properties and many potential applications. SiQDs offer several advantages over other quantum dots; Si is earth abundant, non-toxic and biocompatible. This account briefly highlights recent advancements made by our research group related to the synthesis, functionalization, surface dependent optical properties and applications of SiQDs.


2013 ◽  
Vol 100 ◽  
pp. 166-169 ◽  
Author(s):  
Yongsheng Ma ◽  
Mu Gu ◽  
Shiming Huang ◽  
Xiaolin Liu ◽  
Bo Liu ◽  
...  

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