Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

2013 ◽  
Vol 114 (18) ◽  
pp. 184311 ◽  
Author(s):  
A. Zelenina ◽  
S. A. Dyakov ◽  
D. Hiller ◽  
S. Gutsch ◽  
V. Trouillet ◽  
...  
Keyword(s):  
Optical Properties ◽  
Peak Shift ◽  
Structural And Optical Properties ◽  
Si Nanocrystals ◽  
Si3n4 Matrix ◽  
Size Controlled ◽  
Photoluminescence Peak

Structural and optical properties of Si nanocrystals embedded in SiO2/SiNx multilayers

2009 ◽  
Vol 41 (6) ◽  
pp. 994-997 ◽  
Author(s):  
F. Delachat ◽  
M. Carrada ◽  
G. Ferblantier ◽  
A. Slaoui ◽  
C. Bonafos ◽  
...  
Keyword(s):  
Optical Properties ◽  
Structural And Optical Properties ◽  
Si Nanocrystals

Correlation between structural and optical properties of Si nanocrystals embedded in SiO2: The mechanism of visible light emission

2000 ◽  
Vol 77 (20) ◽  
pp. 3143-3145 ◽  
Author(s):  
B. Garrido ◽  
M. López ◽  
O. González ◽  
A. Pérez-Rodrı́guez ◽  
J. R. Morante ◽  
...  
Keyword(s):  
Optical Properties ◽  
Visible Light ◽  
Light Emission ◽  
Structural And Optical Properties ◽  
Si Nanocrystals ◽  
Visible Light Emission

Correlation between Structural and Optical Properties of Si Nanocrystals in SiO2: Model for the Visible Light Emission

2000 ◽  
Vol 650 ◽  
Author(s):  
M. López ◽  
B. Garrido ◽  
O. González ◽  
C. García ◽  
A. Pérez-Rodríguez ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Optical Properties ◽  
Band Gap ◽  
Crystallite Size ◽  
Light Emission ◽  
Stokes Shift ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Structural And Optical Properties ◽  
Si Nanocrystals

ABSTRACTThe correlation between the structural and optical properties of Si nanocrystals embedded in SiO2 is the key factor to understand their emission mechanism. However, there is a great difficulty in imaging Si nanocrystals in SiO2 and measuring their size distribution because of the lack of contrast in electron microscopy. We have used here a new method for imaging Si nanocrystals by using high resolution electron microscopy in conjunction with conventional electron microscopy in dark field conditions. Regarding the optical properties, the band-gap energies and photoluminescence have been measured by direct and independent methods. The results have allowed experimental determination, for the first time in this material, of the experimental Stokes shift between absorption and emission as a function of crystallite size. The experimental band-gap versus size correlates well with the most accurate theoretical predictions. Moreover, the photoluminescence energy emission versus crystallite size shows a parallel behaviour to that of band-gap energy. Consequently, the experimental Stokes shift is independent of nanocrystal size and is found to be 0.26±0.03 eV. This value is almost twice the energy of the Si-O vibration (0.134 eV). These results suggest that the dominant emission of Si nanocrystals passivated with SiO2 is a fundamental transition spatially located at the Si-SiO2 interface and with the assistance of a local Si-O vibration.

scholarly journals Impact on Structural and Optical Properties of CZTS Thin Films with Solvents and Ge Incorporation

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Abhay Kumar Singh ◽  
Tanka R. Rana ◽  
JunHo Kim ◽  
M. Shkir ◽  
Tien-Chien Jen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Physical Property ◽  
Peak Shift ◽  
Wave Number ◽  
Crystallographic Structure ◽  
Structural And Optical Properties ◽  
Gradual Improvement ◽  
Grain Sizes ◽  
Czts Thin Films

This report demonstrates nontoxic colloidal nitrate route CZTS (Cu2ZnSnS4) synthesis at room temperature, along with their band grading due to incorporation of Ge as cost of Sn (3%). The parent CZTS, CZGTS (Cu2ZnGeSnS4), and their polyvinyl alcohol (PVA), dimethyl sulfoxide (DMSO) solvent containing solutions doctor blade-coated thin film structural and optical properties are discussed. Their sulfurized thin films thickness have been achieved ±2 μ. It has noticed that addition of Ge in CZTS alloy affects the grain sizes, crystallographic structure, Raman spectral peak shift toward the higher wave number side. The addition of PVA and DMSO is also substantially contributed in their physical property modification by demonstrating the gradual improvement in grain sizes and compactness. Moreover, the gradual changes have also appeared in their X-ray diffractometer (XRD) and Raman spectroscopic results. The optical energy band gaps of the CZTS, CZGTS, and their PVA, DMSO mixed alloyed thin films are obtained in between 1.27 eV to 1.57 eV and 1.58 eV to 1.83 eV.

Correlation between Structural and Optical Properties of Si Nanocrystals in SiO2: Model for the Visible Light Emission

2000 ◽  
Vol 647 ◽  
Author(s):  
M. López ◽  
B. Garrido ◽  
O. González ◽  
C. García ◽  
A. Pérez-Rodríguez ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Optical Properties ◽  
Band Gap ◽  
Crystallite Size ◽  
Light Emission ◽  
Stokes Shift ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Structural And Optical Properties ◽  
Si Nanocrystals

AbstractThe correlation between the structural and optical properties of Si nanocrystals embedded in SiO2 is the key factor to understand their emission mechanism. However, there is a great difficulty in imaging Si nanocrystals in SiO2 and measuring their size distribution because of the lack of contrast in electron microscopy. We have used here a new method for imaging Si nanocrystals by using high resolution electron microscopy in conjunction with conventional electron microscopy in dark field conditions. Regarding the optical properties, the band-gap energies and photoluminescence have been measured by direct and independent methods. The results have allowed experimental determination, for the first time in this material, of the experimental Stokes shift between absorption and emission as a function of crystallite size. The experimental band-gap versus size correlates well with the most accurate theoretical predictions. Moreover, the photoluminescence energy emission versus crystallite size shows a parallel behaviour to that of band-gap energy. Consequently, the experimental Stokes shift is independent of nanocrystal size and is found to be 0.26±0.03 eV. This value is almost twice the energy of the Si-O vibration (0.134 eV). These results suggest that the dominant emission of Si nanocrystals passivated with SiO2 is a fundamental transition spatially located at the Si-SiO2 interface and with the assistance of a local Si-O vibration.

Structural and Optical Properties of Cu2ZnSn(SxSe1–x)4 Thin Films

2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural And Optical Properties
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