Dependence of Process Characteristics on Atomic-Step Density in Catalyst-Referred Etching of 4H–SiC(0001) Surface

2011 ◽  
Vol 11 (4) ◽  
pp. 2928-2930 ◽  
Author(s):  
Takeshi Okamoto ◽  
Yasuhisa Sano ◽  
Kazuma Tachibana ◽  
Kenta Arima ◽  
Azusa N. Hattori ◽  
...  
Keyword(s):  
Atomic Step ◽  
Process Characteristics ◽  
Step Density

Comparative Study of Interface Structure in GaAs/AlAs Superlattices By Tem and Raman Scattering

1987 ◽  
Vol 102 ◽  
Author(s):  
T. Nakamura ◽  
M. Ikeda ◽  
S. Muto ◽  
S. Komiya ◽  
I. Umebu
Keyword(s):  
Raman Scattering ◽  
Interface Structure ◽  
Atomic Step ◽  
Transition Layers ◽  
Bright Spots ◽  
Transmission Electron ◽  
Scattering Measurements ◽  
Step Density ◽  
Raman Characterization ◽  
Growth Temperature Dependence

ABSTRACTTransition layers in GaAs/AlAs superlattices were studied by high resolution transmission electron microscopy (HRTEM) observations and Raman scattering measurements. We clarified that arrays of bright spots at the interface in the TEM image is a good indicator of the interfacial configuration and that a high atomic step density with intervals of less than 10 nm is necessary for Raman characterization using confined LO phonons.We characterized the growth temperature dependence of the transition layers at the GaAs/AlAs interfaces. For a sample grown at 500'C, the extent of the transition layers is about one monolayer and that of the interfacial step intervals is more than 10 nm. For a sample grown at 700 0 C, these values are about two monolayers and less than 3 nm, respectively.

Surface and Interfacial Topography of Oxides on Si(111) With Ultra-Low Atomic Step Density

1999 ◽  
Vol 592 ◽  
Author(s):  
Antonio C. Oliver ◽  
Jack M. Blakely
Keyword(s):  
Initial Step ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Oxide Surface ◽  
Atomic Step ◽  
Layer By Layer ◽  
Initial Oxidation ◽  
Atomic Steps ◽  
Si Substrates ◽  
Step Density

ABSTRACTAtomic force microscopy has been used to study the morphology of the oxide surface and the Si-SiO2 interface after oxidation of Si(111) surfaces that are either totally free of atomic steps or have well characterized low step density. The step-free areas were formed by thermally processing a patterned Si surface in which flat areas are enclosed by a square array of ridges; flow of the atomic steps into the surrounding ridge barriers produces a regular array of step-free areas each of which can be up to ∼50µm×50µm. Arrays of widely spaced steps (e.g. 5µm) can also be produced in the step-free areas. AFM scans of the same areas were taken prior to (dry) oxidation, after oxidation, and after chemical removal of the oxide. It was found that at an oxide thickness in the 5-13nm range, the initial step structure of the underlying Si substrates is translated through the oxide to the surface after oxidation with the oxide surface being somewhat rougher than the initial substrate. Furthermore, the initial step morphology of the substrate remains at the Si-SiO2 interface after etching away the oxide by HF. The interface roughness is less than that of the oxide surface. The results suggest that the initial oxidation of silicon proceeds in a ‘layer by layer’ manner and not through a preferential step-flow oxide growth mode.

Non-stationary process characteristics of the gas outflow into a liquid

2019 ◽  
Vol 14 (2) ◽  
pp. 82-88
Author(s):  
M.V. Alekseev ◽  
I.S. Vozhakov ◽  
S.I. Lezhnin
Keyword(s):  
Numerical Simulation ◽  
Liquid Column ◽  
Gas Content ◽  
Liquid Lead ◽  
Gas Flows ◽  
Asymptotic Model ◽  
Process Characteristics ◽  
Significant Difference ◽  
Order Of Magnitude ◽  
Volume Method

A numerical simulation of the process of the outflow of gas under pressure into a closed container partially filled with liquid was carried out. For comparative theoretical analysis, an asymptotic model was used with assumptions about the adiabaticity of the gas outflow process and the ideality of the liquid during the oscillatory one-dimensional motion of the liquid column. In this case, the motion of the liquid column and the evolution of pressure in the gas are determined by the equation of dynamics and the balance of enthalpy. Numerical simulation was performed in the OpenFOAM package using the fluid volume method (VOF method) and the standard k-e turbulence model. The evolution of the fields of volumetric gas content, velocity, and pressure during the flow of gas from the high-pressure chamber into a closed channel filled with liquid in the presence of a ”gas blanket“ at the upper end of the channel is obtained. It was shown that the dynamics of pulsations in the gas cavity that occurs when the gas flows into the closed region substantially depends on the physical properties of the liquid in the volume, especially the density. Numerical modeling showed that the injection of gas into water occurs in the form of a jet outflow of gas, and for the outflow into liquid lead, a gas slug is formed at the bottom of the channel. Satisfactory agreement was obtained between the numerical calculation and the calculation according to the asymptotic model for pressure pulsations in a gas projectile in liquid lead. For water, the results of calculations using the asymptotic model give a significant difference from the results of numerical calculations. In all cases, the velocity of the medium obtained by numerical simulation and when using the asymptotic model differ by an order of magnitude or more.

Process characteristics of screw impellers with a draught tube for Newtonian liquids. Time of homogenization

1981 ◽  
Vol 46 (9) ◽  
pp. 2032-2042 ◽  
Author(s):  
Pavel Seichter
Keyword(s):  
Flow Regime ◽  
Creeping Flow ◽  
Energy Requirements ◽  
Dimensionless Time ◽  
Mixing Times ◽  
Conductivity Method ◽  
Draught Tube ◽  
Process Characteristics ◽  
Newtonian Liquids

A conductivity method has been used to assess the homogenization efficiency of screw impellers with draught tubes. The value of the criterion of homochronousness, i.e. the dimensionless time of homogenization, in the creeping flow regime of Newtonian liquids is dependent on the geometrical simplexes of the mixing system. In particular, on the ratio of diameters of the vessel and the impeller and on the ratio of the screw lead to the impeller diameter. Expression have been proposed to calculate the mixing times. Efficiency has been examined of individual configurations of screw impellers. The lowest energy requirements for homogenization have been found for the system with the ratio D/d = 2.

Process characteristics of screw impellers with a draught tube for Newtonian liquids. Pumping capacity of the impeller

1981 ◽  
Vol 46 (9) ◽  
pp. 2021-2031 ◽  
Author(s):  
Pavel Seichter
Keyword(s):  
Viscous Liquid ◽  
Energy Criterion ◽  
Velocity Profiles ◽  
Newtonian Liquid ◽  
Creeping Flow ◽  
Geometrical Arrangement ◽  
Draught Tube ◽  
Process Characteristics ◽  
Newtonian Liquids

Velocity profiles and pumping capacity have been determined using a thermistor anemometer in a vessel equipped with a screw impeller. In region of the creeping flow of a Newtonian liquid, i.e. for Re <15, the dimensionless pumping capacity is dependent on the geometrical arrangement of the mixing system. The efficiency was assessed of individual configuration from the value energy criterion expressing the dimensionless power requirements for recirculation of a highly viscous liquid in a vessel equipped with a screw impeller.

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