Finishing of AT-Cut Quartz Crystal Wafer with Nanometric Thickness Uniformity by Pulse-Modulated Atmospheric Pressure Plasma Etching

2011 ◽  
Vol 11 (4) ◽  
pp. 2922-2927
Author(s):  
Kazuya Yamamura ◽  
Masaki Ueda ◽  
Masafumi Shibahara ◽  
Nobuyuki Zettsu
Keyword(s):  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Quartz Crystal ◽  
Atmospheric Pressure Plasma ◽  
Thickness Uniformity ◽  
Pressure Plasma ◽  
Crystal Wafer

Development of Ultra Precision Finishing Method for Quartz Crystal Wafer Utilizing Atmospheric Pressure Plasma

2006 ◽  
pp. 233-237
Author(s):  
Masafumi Shibahara ◽  
Yusuke Yamamoto ◽  
Kazuya Yamamura ◽  
Yasuhisa Sano ◽  
Katsuyoshi Endo ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Quartz Crystal ◽  
Atmospheric Pressure Plasma ◽  
Pressure Plasma ◽  
Ultra Precision ◽  
Crystal Wafer ◽  
Precision Finishing

Dicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma Confinement

2014 ◽  
Vol 778-780 ◽  
pp. 759-762 ◽  
Author(s):  
Yasuhisa Sano ◽  
Hiroaki Nishikawa ◽  
Yuu Okada ◽  
Kazuya Yamamura ◽  
Satoshi Matsuyama ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Removal Rate ◽  
Atmospheric Pressure Plasma ◽  
Etching Process ◽  
Plasma Confinement ◽  
Plasma Etching Process ◽  
Pressure Plasma ◽  
High Removal Rate ◽  
Sic Wafer

Silicon carbide (SiC) is a promising semiconductor material for high-temperature, high-frequency, high-power, and energy-saving applications. However, because of the hardness and chemical stability of SiC, few conventional machining methods can handle this material efficiently. A plasma chemical vaporization machining (PCVM) technique is an atmospheric-pressure plasma etching process. We previously proposed a novel style of PCVM dicing using slit apertures for plasma confinement, which in principle can achieve both a high removal rate and small kerf loss, and demonstration experiments were performed using a silicon wafer as a sample. In this research, some basic experiments were performed using 4H-SiC wafer as a sample, and a maximum removal rate of approximately 10 μm/min and a narrowest groove width of 25 μm were achieved. We also found that argon can be used for plasma generation instead of expensive helium gas.

Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF6-added plasma etching of quartz glass

2019 ◽  
Vol 125 (6) ◽  
pp. 063304 ◽  
Author(s):  
Thi-Thuy-Nga Nguyen ◽  
Minoru Sasaki ◽  
Hidefumi Odaka ◽  
Takayoshi Tsutsumi ◽  
Kenji Ishikawa ◽  
...  
Keyword(s):  
Quartz Glass ◽  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
High Density ◽  
Pressure Plasma

High-Efficient Damage-Free Correction of the Thickness Distribution of Quartz Crystal Wafer Using Open-Air Type Plasma CVM

2009 ◽  
Vol 407-408 ◽  
pp. 343-346
Author(s):  
Kazuya Yamamura ◽  
Tetsuya Morikawa ◽  
Masaki Ueda
Keyword(s):  
Quartz Crystal ◽  
Thickness Distribution ◽  
Atmospheric Pressure Plasma ◽  
Subsurface Damage ◽  
Essential Requirement ◽  
Thickness Uniformity ◽  
Finishing Process ◽  
Wire Saw ◽  
High Efficient ◽  
Crystal Wafer

Thickness uniformity of an AT-cut quartz crystal wafer is essential requirement for higher productivity of quartz resonator in the sense of reducing the frequency adjusting process after dicing the wafer. However, commercially available quartz crystal wafers typically have a thickness distribution of ±0.1%, which is induced in conventional mechanical fabrication processes, such as cutting with a wire saw, lapping and polishing. Furthermore, owing to the poor parallelism and the existence of subsurface damage, many spurious peaks, which deteriorate resonance characteristics, are observed in a resonant curve. To resolve these issues, we proposed a new damage-free finishing method to correct the thickness distribution of an AT-cut quartz crystal wafer by the numerically controlled scanning of a localized atmospheric pressure plasma. By applying a new finishing process, the thickness uniformity of a commercially available AT-cut quartz crystal wafer was improved to less than 50 nm level by applying one correcting process without any subsurface damage. Furthermore, applying of the pulse-modulated-plasma drastically decreased the correcting time of the thickness distribution without breaking of the quartz crystal wafer by the thermal stress.

scholarly journals Effects of Surface Modification on Adsorption Behavior of Cell and Protein on Titanium Surface by Using Quartz Crystal Microbalance System

Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 97
Author(s):  
Takumi Matsumoto ◽  
Yuichiro Tashiro ◽  
Satoshi Komasa ◽  
Akiko Miyake ◽  
Yutaka Komasa ◽  
...  
Keyword(s):  
Bone Marrow ◽  
Surface Treatment ◽  
Quartz Crystal Microbalance ◽  
Atmospheric Pressure ◽  
Quartz Crystal ◽  
Bone Marrow Cells ◽  
Atmospheric Pressure Plasma ◽  
Pressure Plasma ◽  
Adhesive Proteins ◽  
Marrow Cells

Primary stability and osseointegration are major challenges in dental implant treatments, where the material surface properties and wettability are critical in the early formation of hard tissue around the implant. In this study, a quartz crystal microbalance (QCM) was used to measure the nanogram level amount of protein and bone marrow cells adhered to the surfaces of titanium (Ti) surface in real time. The effects of ultraviolet (UV) and atmospheric-pressure plasma treatment to impart surface hydrophilicity to the implant surface were evaluated. The surface treatment methods resulted in a marked decrease in the surface carbon (C) content and increase in the oxygen (O) content, along with super hydrophilicity. The results of QCM measurements showed that adhesion of both adhesive proteins and bone marrow cells was enhanced after surface treatment. Although both methods produced implants with good osseointegration behavior and less reactive oxidative species, the samples treated with atmospheric pressure plasma showed the best overall performance and are recommended for clinical use. It was verified that QCM is an effective method for analyzing the initial adhesion process on dental implants.

The influence of moisture on atmospheric pressure plasma etching of PA6 films

2010 ◽  
Vol 10 (1) ◽  
pp. 230-234 ◽  
Author(s):  
Zhiqiang Gao ◽  
Shujing Peng ◽  
Jie Sun ◽  
Lan Yao ◽  
Yiping Qiu
Keyword(s):  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Pressure Plasma
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