Ultraprecision Finishing Process for Improving Thickness Distribution of Quartz Crystal Wafer by Utilizing Atmospheric Pressure Plasma

2006 ◽  
Author(s):  
Kazuya Yamamura ◽  
Yasuhisa Sano ◽  
Yuzo Mori ◽  
Masafumi Shibahara
Keyword(s):  
Atmospheric Pressure ◽  
Quartz Crystal ◽  
Thickness Distribution ◽  
Atmospheric Pressure Plasma ◽  
Pressure Plasma ◽  
Finishing Process ◽  
Crystal Wafer

High-Efficient Damage-Free Correction of the Thickness Distribution of Quartz Crystal Wafer Using Open-Air Type Plasma CVM

2009 ◽  
Vol 407-408 ◽  
pp. 343-346
Author(s):  
Kazuya Yamamura ◽  
Tetsuya Morikawa ◽  
Masaki Ueda
Keyword(s):  
Quartz Crystal ◽  
Thickness Distribution ◽  
Atmospheric Pressure Plasma ◽  
Subsurface Damage ◽  
Essential Requirement ◽  
Thickness Uniformity ◽  
Finishing Process ◽  
Wire Saw ◽  
High Efficient ◽  
Crystal Wafer

Thickness uniformity of an AT-cut quartz crystal wafer is essential requirement for higher productivity of quartz resonator in the sense of reducing the frequency adjusting process after dicing the wafer. However, commercially available quartz crystal wafers typically have a thickness distribution of ±0.1%, which is induced in conventional mechanical fabrication processes, such as cutting with a wire saw, lapping and polishing. Furthermore, owing to the poor parallelism and the existence of subsurface damage, many spurious peaks, which deteriorate resonance characteristics, are observed in a resonant curve. To resolve these issues, we proposed a new damage-free finishing method to correct the thickness distribution of an AT-cut quartz crystal wafer by the numerically controlled scanning of a localized atmospheric pressure plasma. By applying a new finishing process, the thickness uniformity of a commercially available AT-cut quartz crystal wafer was improved to less than 50 nm level by applying one correcting process without any subsurface damage. Furthermore, applying of the pulse-modulated-plasma drastically decreased the correcting time of the thickness distribution without breaking of the quartz crystal wafer by the thermal stress.

Development of Ultra Precision Finishing Method for Quartz Crystal Wafer Utilizing Atmospheric Pressure Plasma

2006 ◽  
pp. 233-237
Author(s):  
Masafumi Shibahara ◽  
Yusuke Yamamoto ◽  
Kazuya Yamamura ◽  
Yasuhisa Sano ◽  
Katsuyoshi Endo ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Quartz Crystal ◽  
Atmospheric Pressure Plasma ◽  
Pressure Plasma ◽  
Ultra Precision ◽  
Crystal Wafer ◽  
Precision Finishing

scholarly journals Effects of Surface Modification on Adsorption Behavior of Cell and Protein on Titanium Surface by Using Quartz Crystal Microbalance System

Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 97
Author(s):  
Takumi Matsumoto ◽  
Yuichiro Tashiro ◽  
Satoshi Komasa ◽  
Akiko Miyake ◽  
Yutaka Komasa ◽  
...  
Keyword(s):  
Bone Marrow ◽  
Surface Treatment ◽  
Quartz Crystal Microbalance ◽  
Atmospheric Pressure ◽  
Quartz Crystal ◽  
Bone Marrow Cells ◽  
Atmospheric Pressure Plasma ◽  
Pressure Plasma ◽  
Adhesive Proteins ◽  
Marrow Cells

Primary stability and osseointegration are major challenges in dental implant treatments, where the material surface properties and wettability are critical in the early formation of hard tissue around the implant. In this study, a quartz crystal microbalance (QCM) was used to measure the nanogram level amount of protein and bone marrow cells adhered to the surfaces of titanium (Ti) surface in real time. The effects of ultraviolet (UV) and atmospheric-pressure plasma treatment to impart surface hydrophilicity to the implant surface were evaluated. The surface treatment methods resulted in a marked decrease in the surface carbon (C) content and increase in the oxygen (O) content, along with super hydrophilicity. The results of QCM measurements showed that adhesion of both adhesive proteins and bone marrow cells was enhanced after surface treatment. Although both methods produced implants with good osseointegration behavior and less reactive oxidative species, the samples treated with atmospheric pressure plasma showed the best overall performance and are recommended for clinical use. It was verified that QCM is an effective method for analyzing the initial adhesion process on dental implants.

Effect of Substrate Heating in Thickness Correction of Quartz Crystal Wafer by Plasma Chemical Vaporization Machining

2010 ◽  
Vol 447-448 ◽  
pp. 218-222 ◽  
Author(s):  
Masaki Ueda ◽  
Masafumi Shibahara ◽  
Nobuyuki Zettsu ◽  
Kazuya Yamamura
Keyword(s):  
Quartz Crystal ◽  
Removal Rate ◽  
Thickness Distribution ◽  
Atmospheric Pressure Plasma ◽  
Scanning Speed ◽  
Quartz Resonator ◽  
Clock Frequency ◽  
Telecommunication System ◽  
Crystal Wafer ◽  
Thickness Correction

Quartz resonator is a very important device to generate a clock frequency for information and telecommunication system. Improvement of the productivity of the quartz resonator is always required because huge amounts of resonator are demanded to install to various electronic devices. Resonance frequency of the quartz resonator is determined by the thickness of the quartz crystal wafer. Therefore it is essential to uniform the thickness distribution of the quartz crystal wafer with nanometric level. We propose the improvement process of the thickness distribution of the quartz crystal wafer by numerically controlled correction using atmospheric pressure plasma which is noncontact and chemical removal technique. We have already succeeded in obtaining a thickness uniformity of 33.1nm within 2 min in the thickness correction of an AT-cut quartz crystal wafer with an area of 24 mm × 24 mm. However, increase of removal rate and improvement of correction accuracy are required for industrial manufacturing. Heating effects of the quartz crystal wafer in the removal rate and the correction accuracy were investigated. The heating of the substrate and compensate of the scanning speed of the worktable in accordance with the variation of the surface temperature enabled an increase of 50% in removal rate and 10-nanometric-level accuracy in correction of the thickness distribution of the quartz crystal wafer.

Back-Side Thinning of Silicon Carbide Wafer by Plasma Etching Using Atmospheric-Pressure Plasma

2012 ◽  
Vol 516 ◽  
pp. 108-112 ◽  
Author(s):  
Yasuhisa Sano ◽  
Kohei Aida ◽  
Hiroaki Nishikawa ◽  
Kazuya Yamamura ◽  
Satoshi Matsuyama ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Removal Rate ◽  
Thickness Distribution ◽  
Atmospheric Pressure Plasma ◽  
Back Side ◽  
Wafer Level ◽  
Pressure Plasma ◽  
Sic Wafer

Silicon carbide (SiC) power devices have received much attention in recent years because they enable the fabrication of devices with low power consumption. To reduce the on-resistance in vertical power transistors, back-side thinning is required after device processing. However, it is difficult to thin a SiC wafer with a high removal rate by conventional mechanical machining because its high hardness and brittleness cause cracking and chipping during thinning. In this study, we attempted to thin a SiC wafer by plasma chemical vaporization machining (PCVM), which is plasma etching using atmospheric-pressure plasma. The wafer level thinning of a 2-inch 4H-SiC wafer has been possible without a removal thickness distribution caused by the circular shape of the wafer using the newly developed PCVM apparatus for back-side thinning with a spatial wafer stage.

Ultrasonic Wave Detection in Atmospheric Pressure Plasma Using Fraunhofer Diffraction Effect

PIERS Online ◽  
2010 ◽  
Vol 6 (7) ◽  
pp. 636-639
Author(s):  
Toshiyuki Nakamiya ◽  
Fumiaki Mitsugi ◽  
Shota Suyama ◽  
Tomoaki Ikegami ◽  
Yoshito Sonoda ◽  
...  
Keyword(s):  
Ultrasonic Wave ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Diffraction Effect ◽  
Fraunhofer Diffraction ◽  
Wave Detection ◽  
Pressure Plasma

scholarly journals Atmospheric Pressure Plasma Deposition of TiO2: A Review

Materials ◽  
2020 ◽  
Vol 13 (13) ◽  
pp. 2931
Author(s):  
Soumya Banerjee ◽  
Ek Adhikari ◽  
Pitambar Sapkota ◽  
Amal Sebastian ◽  
Sylwia Ptasinska
Keyword(s):  
Atmospheric Pressure ◽  
Gas Flow ◽  
Plasma Deposition ◽  
Atmospheric Pressure Plasma ◽  
Cost Savings ◽  
Historical Background ◽  
Pressure Plasma ◽  
Wide Range ◽  
The Status ◽  
Deposition Techniques

Atmospheric pressure plasma (APP) deposition techniques are useful today because of their simplicity and their time and cost savings, particularly for growth of oxide films. Among the oxide materials, titanium dioxide (TiO2) has a wide range of applications in electronics, solar cells, and photocatalysis, which has made it an extremely popular research topic for decades. Here, we provide an overview of non-thermal APP deposition techniques for TiO2 thin film, some historical background, and some very recent findings and developments. First, we define non-thermal plasma, and then we describe the advantages of APP deposition. In addition, we explain the importance of TiO2 and then describe briefly the three deposition techniques used to date. We also compare the structural, electronic, and optical properties of TiO2 films deposited by different APP methods. Lastly, we examine the status of current research related to the effects of such deposition parameters as plasma power, feed gas, bias voltage, gas flow rate, and substrate temperature on the deposition rate, crystal phase, and other film properties. The examples given cover the most common APP deposition techniques for TiO2 growth to understand their advantages for specific applications. In addition, we discuss the important challenges that APP deposition is facing in this rapidly growing field.

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