Electrical Properties of Covalently Immobilized Single-Layer Graphene Devices

2011 ◽  
Vol 11 (2) ◽  
pp. 1288-1292 ◽  
Author(s):  
Li-Hong Liu ◽  
Gopichand Nandamuri ◽  
Raj Solanki ◽  
Mingdi Yan
Keyword(s):  
Electrical Properties ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Graphene Devices

scholarly journals Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

Nano Letters ◽  
2011 ◽  
Vol 11 (10) ◽  
pp. 4047-4051 ◽  
Author(s):  
Hang Zhang ◽  
Elena Bekyarova ◽  
Jhao-Wun Huang ◽  
Zeng Zhao ◽  
Wenzhong Bao ◽  
...  
Keyword(s):  
Band Gap ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Band Gap Engineering ◽  
Layer Graphene ◽  
Graphene Devices

scholarly journals Reduced crystallinity and enhanced charge transport by melt annealing of an organic semiconductor on single layer graphene

2016 ◽  
Vol 4 (19) ◽  
pp. 4143-4149 ◽  
Author(s):  
Vasyl Skrypnychuk ◽  
Nicolas Boulanger ◽  
Victor Yu ◽  
Michael Hilke ◽  
Michael F. Toney ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Transport ◽  
Organic Semiconductor ◽  
Annealing Temperature ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Semiconducting Polymer ◽  
Layer Graphene ◽  
Melt Annealing

We report on the effect of the annealing temperature on the crystallization and the electrical properties of the semiconducting polymer poly(3-hexylthiophene) (P3HT) on single layer graphene.

Effect of Extrinsic Disorder on the Magnetoresistance Response of Gated Single-Layer Graphene Devices

2021 ◽  
Author(s):  
Atiye Pezeshki ◽  
Anoir Hamdi ◽  
Zuchong Yang ◽  
Aura Lubio ◽  
Iman Shackery ◽  
...  
Keyword(s):  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Graphene Devices

Tailoring of electrical properties of TiO2 decorated CVD grown single-layer graphene by HNO3 molecular doping

2020 ◽  
Vol 264 ◽  
pp. 116389 ◽  
Author(s):  
Anand Kumar Singh ◽  
Vivek Chaudhary ◽  
Arun Kumar Singh ◽  
S.R.P. Sinha
Keyword(s):  
Electrical Properties ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Molecular Doping

Ultra-large single-layer graphene obtained from solution chemical reduction and its electrical properties

2010 ◽  
Vol 12 (9) ◽  
pp. 2164 ◽  
Author(s):  
Xiaochen Dong ◽  
Ching-Yuan Su ◽  
Wenjing Zhang ◽  
Jianwen Zhao ◽  
Qidan Ling ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Chemical Reduction ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene

scholarly journals Spin-to-charge conversion in 2D electron gas and single-layer graphene devices

2018 ◽  
Vol 123 (3) ◽  
pp. 034304 ◽  
Author(s):  
J. G. G. S. Ramos ◽  
T. C. Vasconcelos ◽  
A. L. R. Barbosa
Keyword(s):  
Electron Gas ◽  
Single Layer ◽  
Single Layer Graphene ◽  
2D Electron Gas ◽  
Layer Graphene ◽  
Graphene Devices

scholarly journals Method for Controlling Electrical Properties of Single-Layer Graphene Nanoribbons via Adsorbed Planar Molecular Nanoparticles

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Hirofumi Tanaka ◽  
Ryo Arima ◽  
Minoru Fukumori ◽  
Daisuke Tanaka ◽  
Ryota Negishi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Speed ◽  
Graphene Nanoribbons ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Simple Method ◽  
Layer Graphene ◽  
Planar Molecule ◽  
Double Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes

Abstract A simple method for fabricating single-layer graphene nanoribbons (sGNRs) from double-walled carbon nanotubes (DWNTs) was developed. A sonication treatment was employed to unzip the DWNTs by inducing defects in them through annealing at 500 °C. The unzipped DWNTs yielded double-layered GNRs (dGNRs). Further sonication allowed each dGNR to be unpeeled into two sGNRs. Purification performed using a high-speed centrifuge ensured that more than 99% of the formed GNRs were sGNRs. The changes induced in the electrical properties of the obtained sGNR by the absorption of nanoparticles of planar molecule, naphthalenediimide (NDI), were investigated. The shape of the I-V curve of the sGNRs varied with the number of NDI nanoparticles adsorbed. This was suggestive of the existence of a band gap at the narrow-necked part near the NDI-adsorbing area of the sGNRs.

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