Ultra-large single-layer graphene obtained from solution chemical reduction and its electrical properties

2010 ◽  
Vol 12 (9) ◽  
pp. 2164 ◽  
Author(s):  
Xiaochen Dong ◽  
Ching-Yuan Su ◽  
Wenjing Zhang ◽  
Jianwen Zhao ◽  
Qidan Ling ◽  
...  
2016 ◽  
Vol 4 (19) ◽  
pp. 4143-4149 ◽  
Author(s):  
Vasyl Skrypnychuk ◽  
Nicolas Boulanger ◽  
Victor Yu ◽  
Michael Hilke ◽  
Michael F. Toney ◽  
...  

We report on the effect of the annealing temperature on the crystallization and the electrical properties of the semiconducting polymer poly(3-hexylthiophene) (P3HT) on single layer graphene.


2020 ◽  
Vol 264 ◽  
pp. 116389 ◽  
Author(s):  
Anand Kumar Singh ◽  
Vivek Chaudhary ◽  
Arun Kumar Singh ◽  
S.R.P. Sinha

2011 ◽  
Vol 11 (2) ◽  
pp. 1288-1292 ◽  
Author(s):  
Li-Hong Liu ◽  
Gopichand Nandamuri ◽  
Raj Solanki ◽  
Mingdi Yan

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Hirofumi Tanaka ◽  
Ryo Arima ◽  
Minoru Fukumori ◽  
Daisuke Tanaka ◽  
Ryota Negishi ◽  
...  

Abstract A simple method for fabricating single-layer graphene nanoribbons (sGNRs) from double-walled carbon nanotubes (DWNTs) was developed. A sonication treatment was employed to unzip the DWNTs by inducing defects in them through annealing at 500 °C. The unzipped DWNTs yielded double-layered GNRs (dGNRs). Further sonication allowed each dGNR to be unpeeled into two sGNRs. Purification performed using a high-speed centrifuge ensured that more than 99% of the formed GNRs were sGNRs. The changes induced in the electrical properties of the obtained sGNR by the absorption of nanoparticles of planar molecule, naphthalenediimide (NDI), were investigated. The shape of the I-V curve of the sGNRs varied with the number of NDI nanoparticles adsorbed. This was suggestive of the existence of a band gap at the narrow-necked part near the NDI-adsorbing area of the sGNRs.


2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.


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