scholarly journals Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

Nano Letters ◽  
2011 ◽  
Vol 11 (10) ◽  
pp. 4047-4051 ◽  
Author(s):  
Hang Zhang ◽  
Elena Bekyarova ◽  
Jhao-Wun Huang ◽  
Zeng Zhao ◽  
Wenzhong Bao ◽  
...  
Keyword(s):  
Band Gap ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Band Gap Engineering ◽  
Layer Graphene ◽  
Graphene Devices

Band gap engineering for single-layer graphene by using slow Li+ions

2016 ◽  
Vol 27 (31) ◽  
pp. 31LT03 ◽  
Author(s):  
Mintae Ryu ◽  
Paengro Lee ◽  
Jingul Kim ◽  
Heemin Park ◽  
Jinwook Chung
Keyword(s):  
Band Gap ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Band Gap Engineering ◽  
Layer Graphene

Chemistry at the Dirac Point of Graphene: Diels-Alder Approach to Reversible Band Gap Engineering and High Mobility Graphene Devices

2014 ◽  
Vol 1658 ◽  
Author(s):  
Santanu Sarkar
Keyword(s):  
Band Gap ◽  
Dirac Point ◽  
High Mobility ◽  
Single Layer ◽  
Diels Alder ◽  
Single Layer Graphene ◽  
Dual Nature ◽  
Band Gap Engineering ◽  
Graphene Devices ◽  
Graphene Fet

ABSTRACTThe Diels-Alder (DA) pericyclic chemistry is one of the most powerful reactions in synthetic chemistry. We have recently shown that the unique zero-band-gap electronic structure of graphene at the Dirac point facilitates the band-gap-dependent DA reaction of graphene, although graphene is the thermochemical reference for carbon. We have shown that in the DA reactions, graphene can function either as a diene or a dienophile (dual nature). Such DA functionalization of graphene when applied to graphene-FET devices allows balanced functionalization (creation of a pair of new sp3 centers or divacancies) at both A and B graphene sublattices, allowing the fabrication of high mobility DA-functionalized single-layer graphene devices (DA-SLG) with acceptable on/off ratio. The chemistry is thermally reversible via retro-DA chemistry, thus allowing reversible engineering of graphene devices.

Cerium-induced changes in the π-band of graphene

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114219-114223 ◽  
Author(s):  
Jingul Kim ◽  
Paengro Lee ◽  
Mintae Ryu ◽  
Heemin Park ◽  
Jinwook Chung
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Temperature Dependent ◽  
Layer Graphene ◽  
Structural And Electronic Properties ◽  
Induced Changes

By doping magnetic Ce atoms on a single layer graphene, we report a new and efficient means of modifying structural and electronic properties of graphene that opens a temperature-dependent band gap of size up to 0.5 eV.

scholarly journals Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

2012 ◽  
Vol 4 (2) ◽  
pp. e6-e6 ◽  
Author(s):  
Ruge Quhe ◽  
Jiaxin Zheng ◽  
Guangfu Luo ◽  
Qihang Liu ◽  
Rui Qin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Hexagonal Boron Nitride ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene

Effect of Extrinsic Disorder on the Magnetoresistance Response of Gated Single-Layer Graphene Devices

2021 ◽  
Author(s):  
Atiye Pezeshki ◽  
Anoir Hamdi ◽  
Zuchong Yang ◽  
Aura Lubio ◽  
Iman Shackery ◽  
...  
Keyword(s):  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Graphene Devices

Large and tunable thermoelectric effect in single layer graphene on bilayer graphene

2015 ◽  
Vol 29 (03) ◽  
pp. 1550003 ◽  
Author(s):  
Z. Z. Alisultanov
Keyword(s):  
Simple Model ◽  
Band Gap ◽  
Single Layer ◽  
Bilayer Graphene ◽  
Single Layer Graphene ◽  
Monolayer Graphene ◽  
Thermoelectric Effect ◽  
Layer Graphene ◽  
Trilayer Graphene

The conductivity and thermopower of a trilayer graphene based system have been studied within the framework of a simple model. It has been shown that kinks of the conductivity and peaks of the thermopower of the monolayer graphene formed on a tunable bilayer graphene appear near the edges of the band gap of the tunable bilayer graphene.

scholarly journals Semiconducting properties of perchlorate-doped graphene using an electrochemical method

RSC Advances ◽  
2017 ◽  
Vol 7 (27) ◽  
pp. 16823-16825 ◽  
Author(s):  
Chang-Soo Park ◽  
Dongil Chu ◽  
Yoon Shon ◽  
Eun Kyu Kim
Keyword(s):  
Band Gap ◽  
Electrochemical Method ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Semiconducting Properties ◽  
Gap Opening ◽  
Doped Graphene ◽  
P Type

We report a band gap opening and p-type doping for single layer graphene by an electrochemical method.

Electrical Properties of Covalently Immobilized Single-Layer Graphene Devices

2011 ◽  
Vol 11 (2) ◽  
pp. 1288-1292 ◽  
Author(s):  
Li-Hong Liu ◽  
Gopichand Nandamuri ◽  
Raj Solanki ◽  
Mingdi Yan
Keyword(s):  
Electrical Properties ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Graphene Devices

scholarly journals Erratum: Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

2012 ◽  
Vol 4 (4) ◽  
pp. e16-e16 ◽  
Author(s):  
Ruge Quhe ◽  
Jiaxin Zheng ◽  
Guangfu Luo ◽  
Qihang Liu ◽  
Rui Qin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Hexagonal Boron Nitride ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene
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