Epitaxial Semiconductor Quantum Wires

2008 ◽  
Vol 8 (7) ◽  
pp. 3300-3314 ◽  
Author(s):  
J. Wu ◽  
Y. H. Chen ◽  
Z. G. Wang
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Quantum Wires ◽  
Growth Mechanisms ◽  
Electrical And Optical Properties ◽  
Self Assembling ◽  
Structural Configurations ◽  
Laser Devices ◽  
Growth Methods

The investigation on the direct epitaxial quantum wires (QWR) using MBE or MOCVD has been persuited for more than two decades, more lengthy in history as compared with its quantum dot counterpart. Up to now, QWRs with various structural configurations have been produced with different growth methods. This is a reviewing article consisting mainly of two parts. The first part discusses QWRs of various configurations, together with laser devices based on them, in terms of the two growth mechanisms, self-ordering and self-assembling. The second part gives a brief review of the electrical and optical properties of QWRs.

The impact of different ZnO growth methods on the electrical and optical properties of a n-ZnO/p-GaN:Mg/c-plane sapphire UV LED

RSC Advances ◽  
2014 ◽  
Vol 4 (26) ◽  
pp. 13593-13600 ◽  
Author(s):  
Songül Fiat Varol ◽  
Derya Şahin ◽  
Michael Kompitsas ◽  
Güven Çankaya
Keyword(s):  
Optical Properties ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Uv Led ◽  
Gel Technique ◽  
The Impact ◽  
Growth Methods

ZnO films were successfully grown on GaN/sapphire by Pulsed Laser Deposition (PLD) and the sol–gel technique.

Effect of metal electrode on electrical and optical properties ZnO quantum dot-based UV photodetector

2020 ◽  
Author(s):  
Abhinav Pratap Singh ◽  
Rishibrind Kumar Upadhyay ◽  
Deepchandra Upadhyay ◽  
Amit Kumar ◽  
Satyabrata Jit
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Metal Electrode ◽  
Electrical And Optical Properties ◽  
Uv Photodetector

The Growth Mechanisms of GaSb Epitaxial Film by MOCVD

1990 ◽  
Vol 216 ◽  
Author(s):  
H. Y. Ueng ◽  
S. M. Chen ◽  
Y. K. Su ◽  
F. S. Juang
Keyword(s):  
Growth Rate ◽  
Optical Properties ◽  
Reaction Mechanism ◽  
Substrate Temperature ◽  
Epitaxial Film ◽  
Hole Concentration ◽  
Growth Mechanisms ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Growth Reaction

ABSTRACTThe growth reaction mechanism was experimentally investigated for TEGa and TMSb used for MOCVD GaSb epitaxial growth. The variations of growth rate, substrate temperature, the V/III ratio and the mole-fraction of III and V source gases, were detailly considered and investigated with regard to their effect on electrical and optical properties were measured during the epitaxial process. The experimental results were used to provide an inspection on defects interaction mechanisms and on the type of conductivity. Based on the investigation of growth mechanism, at 470°, a high quality GaSb epitaxial film 1 with 3 mobility, 634 cm2/V*sec and low hole concentration, 1.67x1016 cm−2 was obtained.

Enhancement of Electrical and Optical Properties of Silicon Quantum Dot Light-Emitting Diodes with ZnO Doping Layer

2009 ◽  
Vol 48 (10) ◽  
pp. 105004
Author(s):  
Baek Hyun Kim ◽  
Robert F. Davis ◽  
Chang-Hee Cho ◽  
Seong-Ju Park ◽  
Chul Huh ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Silicon Quantum Dot ◽  
Zno Doping

ELECTRICAL AND OPTICAL PROPERTIES OF UHV SUBLIMED a-As

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties
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