Effect of metal electrode on electrical and optical properties ZnO quantum dot-based UV photodetector

2020 ◽  
Author(s):  
Abhinav Pratap Singh ◽  
Rishibrind Kumar Upadhyay ◽  
Deepchandra Upadhyay ◽  
Amit Kumar ◽  
Satyabrata Jit
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Metal Electrode ◽  
Electrical And Optical Properties ◽  
Uv Photodetector

Epitaxial Semiconductor Quantum Wires

2008 ◽  
Vol 8 (7) ◽  
pp. 3300-3314 ◽  
Author(s):  
J. Wu ◽  
Y. H. Chen ◽  
Z. G. Wang
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Quantum Wires ◽  
Growth Mechanisms ◽  
Electrical And Optical Properties ◽  
Self Assembling ◽  
Structural Configurations ◽  
Laser Devices ◽  
Growth Methods

The investigation on the direct epitaxial quantum wires (QWR) using MBE or MOCVD has been persuited for more than two decades, more lengthy in history as compared with its quantum dot counterpart. Up to now, QWRs with various structural configurations have been produced with different growth methods. This is a reviewing article consisting mainly of two parts. The first part discusses QWRs of various configurations, together with laser devices based on them, in terms of the two growth mechanisms, self-ordering and self-assembling. The second part gives a brief review of the electrical and optical properties of QWRs.

Enhancement of Electrical and Optical Properties of Silicon Quantum Dot Light-Emitting Diodes with ZnO Doping Layer

2009 ◽  
Vol 48 (10) ◽  
pp. 105004
Author(s):  
Baek Hyun Kim ◽  
Robert F. Davis ◽  
Chang-Hee Cho ◽  
Seong-Ju Park ◽  
Chul Huh ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Silicon Quantum Dot ◽  
Zno Doping

ELECTRICAL AND OPTICAL PROPERTIES OF UHV SUBLIMED a-As

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties

MAGNETIC FIELD, PRESSURE AND TEMPERATURE DEPENDENT OPTICAL PROPERTIES IN A GaAs 9.0 P 1.0 QUANTUM DOT

2014 ◽  
Vol 6 (2) ◽  
pp. 1178-1190
Author(s):  
A. JOHN PETER ◽  
Ada Vinolin
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Dot ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Photon Energy ◽  
Nonlinear Optical ◽  
Binding Energies ◽  
Nonlinear Optical Properties ◽  
Optical Rectification

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.

Electrical and Optical Properties of Polypyrrole and Polyaniline Blends

2020 ◽  
Vol 62 (6) ◽  
pp. 680-690
Author(s):  
Tekalign A. Tikish ◽  
Ashok Kumar ◽  
Jung Yong Kim
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties
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