Modeling, Simulation, Fabrication, and Characterization of a 10- $\mu$ W/cm2 Class Si-Nanowire Thermoelectric Generator for IoT Applications

2018 ◽  
Vol 65 (11) ◽  
pp. 5180-5188 ◽  
Author(s):  
Motohiro Tomita ◽  
Shunsuke Oba ◽  
Yuya Himeda ◽  
Ryo Yamato ◽  
Keisuke Shima ◽  
...  
Keyword(s):  
Thermoelectric Generator ◽  
Si Nanowire ◽  
Iot Applications ◽  
Modeling Simulation ◽  
Fabrication And Characterization

Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)

2009 ◽  
Vol 55 (1) ◽  
pp. 28-31 ◽  
Author(s):  
Seung-Yong Lee ◽  
Chan-Oh Jang ◽  
Jung-Hwan Hyung ◽  
Dong-Joo Kim ◽  
Tae-Hong Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Si Nanowire ◽  
Fabrication And Characterization

Fabrication of Poly-Silicon Nano-Wire Transistors on Plastic Substrates

2007 ◽  
Vol 7 (11) ◽  
pp. 4150-4153
Author(s):  
ChangMin Park ◽  
SeHan Lee ◽  
MinSu Choi ◽  
MyungGil Kang ◽  
YoungChai Jung ◽  
...  
Keyword(s):  
Sacrificial Layer ◽  
Flexible Substrates ◽  
Si Substrate ◽  
Plastic Substrates ◽  
Si Nanowire ◽  
Nanowire Transistors ◽  
New Process ◽  
Curing Condition ◽  
Fabrication And Characterization

We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150° with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our new process can be applied to the fabrication of Si-nanowire transistors with larger mobilities.

6 Watt Segmented Power Generator Modules using Bi2Te3 and (InGaAs)1-x(InAlAs)x Elements Embedded with ErAs Nanoparticles

2008 ◽  
Vol 1129 ◽  
Author(s):  
Gehong Zeng ◽  
Je-Hyeong Bahk ◽  
Ashok T Ramu ◽  
John E Bowers ◽  
Hong Lu ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Metallic Nanoparticles ◽  
Thermoelectric Generator ◽  
Power Generator ◽  
Erbium Arsenide ◽  
Long Wavelength ◽  
Potential Barriers ◽  
Scattering Centers ◽  
Fabrication And Characterization

AbstractWe report the fabrication and characterization of segmented element power generator modules of 16 x 16 thermoelectric elements consisting of 0.8 mm thick Bi2Te3 and 50 μm thick ErAs:(InGaAs)1-x(InAlAs)x with 0.6% ErAs by volume. Erbium Arsenide metallic nanoparticles are incorporated to create scattering centers for middle and long wavelength phonons, and to form local potential barriers for electron filtering. The thermoelectric properties of ErAs:(InGaAs)1-x(InAlAs)x were characterized in terms of electrical conductivity and Seebeck coefficient from 300 K up to 830 K. Generator modules of Bi2Te3 and ErAs:(InGaAs)1-x(InAlAs)x segmented elements were fabricated and an output power of 6.3 W was measured. 3D finite modeling shows that the performance of thermoelectric generator modules can further be enhanced by the improvement of the thermoelectric properties of the element materials, and reducing the electrical and thermal parasitic losses.

scholarly journals Fabrication and characterization of Bi-Sb-Te based thin film thermoelectric generator prepared by ion beam sputtering deposition

2011 ◽  
Vol 60 (9) ◽  
pp. 098402
Author(s):  
Fan Ping ◽  
Cai Zhao-Kun ◽  
Zheng Zhuang-Hao ◽  
Zhang Dong-Ping ◽  
Cai Xing-Min ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermoelectric Generator ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Fabrication And Characterization
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