Low Loss High Mesa Optical Waveguides Based on InGaAsP/InP Heterostructures

2006 ◽  
Vol 6 (11) ◽  
pp. 3562-3566
Author(s):  
W. S. Choi ◽  
J. H. Jang ◽  
B.-A. Yu ◽  
Y. L. Lee ◽  
W. Zhao ◽  
...  
Keyword(s):  
Optical Waveguides ◽  
Inductively Coupled Plasma ◽  
Three Dimensional ◽  
Low Loss ◽  
Sidewall Roughness ◽  
Scattering Loss ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Fabry Perot ◽  
Propagation Losses

Low loss high mesa optical waveguides were fabricated on InGaAsP/InP heterostructures by utilizing inductively-coupled-plasma reactive ion etching (ICP-RIE) and electron beam lithography technique. The fabrication process was optimized by measuring sidewall roughness of deep-etched waveguides. Atomic force microscope loaded with carbon nanotude was used to obtain three-dimensional image of the etched sidewall of waveguides. The obtained statistical information such as rms roughness and correlation length was used to theoretically calculate scattering loss of waveguides. Several waveguides with different number of sharp bends and the length were fabricated and their propagation losses were measured by modified Fabry-Perot method. The measured propagation losses were compared with theoretically calculated losses.

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

A REVERSIBLE OPTICAL SENSOR BASED ON CHITOSAN FILM FOR THE SELECTIVE DETECTION OF COPPER IONS

2012 ◽  
Vol 24 (05) ◽  
pp. 453-459 ◽  
Author(s):  
Shenhsiung Lin ◽  
Chia-Chen Chang ◽  
Chii-Wann Lin
Keyword(s):  
Functional Groups ◽  
Inductively Coupled Plasma ◽  
Copper Ions ◽  
Three Dimensional ◽  
Copper Ion ◽  
Chitosan Film ◽  
Detection Limits ◽  
Dimensional Structure ◽  
Optical Detectors ◽  
Inductively Coupled

Heavy metals greatly influence animal physiology, even at small doses. Among these metals, the copper ion is of great concern due to its effects on humans and wide applications in industry. Compared to atomic absorption spectroscopy and inductively coupled plasma-mass spectrometry, which destroy the samples that are analyzed, optical techniques do not decompose the analyte and have become a popular field of recent research. In this paper, we combined a novel optical detector that did not require sample-labeling, called surface plasmon resonance (SPR), with chitosan to detect copper ions by modifying the functional groups of chitosan through pH modification. Compared to other optical detectors, the SPR system was relatively fast and involved fewer experimental confounding factors. The three-dimensional structure of chitosan was used to obtain lower detection limits. Moreover, modification of the chitosan functional groups resulted in efficient regeneration by controlling the pH. A detection limit of 0.1 μM was obtained (linear range: 0.5–10 μM, R2 = 0.976), and the specificity was certified by comparing the copper ion with six other ions. Additionally, we successfully regenerated the SPR chips by modifying the functional groups. In conclusion, the chitosan–SPR system detected copper ions with improved detection limits using a quick and simple regeneration method.

scholarly journals Physical–Chemical Exfoliation of n-Alkylamine Derivatives of Layered Perovskite-like Oxide H2K0.5Bi2.5Ti4O13 into Nanosheets

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2708
Author(s):  
Iana A. Minich ◽  
Oleg I. Silyukov ◽  
Sergei A. Kurnosenko ◽  
Veronika V. Gak ◽  
Vladimir D. Kalganov ◽  
...  
Keyword(s):  
Self Assembly ◽  
Inductively Coupled Plasma ◽  
Layered Perovskite ◽  
Inductively Coupled ◽  
Si Substrates ◽  
Ion Exchange Reaction ◽  
Atomic Force ◽  
Chemical Exfoliation ◽  
Coating Formation ◽  
Assembly Procedure

In the present work, we report the results on exfoliation and coating formation of inorganic–organic hybrids based on the layered perovskite-like bismuth titanate H2K0.5Bi2.5Ti4O13·H2O that could be prepared by a simple ion exchange reaction from a Ruddlesden–Popper phase K2.5Bi2.5Ti4O13. The inorganic–organic hybrids were synthesized by intercalation reactions. Exfoliation into nanosheets was performed for the starting hydrated protonated titanate and for the derivatives intercalated by n-alkylamines to study the influence of preliminary intercalation on exfoliation efficiency. The selected precursors were exfoliated in aqueous solutions of tetrabutylammonium hydroxide using facile stirring and ultrasonication. The suspensions of nanosheets obtained were characterized using UV–vis spectrophotometry, dynamic light scattering, inductively coupled plasma spectroscopy, and gravimetry. Nanosheets were coated on preliminarily polyethyleneimine-covered Si substrates using a self-assembly procedure and studied using atomic force and scanning electron microscopy.

Fabrication of low loss polymer inverse ridge waveguide using inductively coupled plasma etching

2012 ◽  
Vol 10 (s1) ◽  
pp. S12202-312205
Author(s):  
Xiaoqiang Sun Xiaoqiang Sun ◽  
Kun Zhang Kun Zhang ◽  
Changming Chen Changming Chen ◽  
Xiaodong Li Xiaodong Li ◽  
Fei Wang Fei Wang ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Ridge Waveguide ◽  
Low Loss ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled

Cold Deposition of Zinc Sulfide Optical Waveguides Using Thermoelectric Device

2011 ◽  
Vol 264-265 ◽  
pp. 856-861 ◽  
Author(s):  
Saafie Salleh ◽  
Harvey N. Rutt ◽  
M.N. Dalimin ◽  
Muhamad Mat Salleh
Keyword(s):  
Zinc Sulfide ◽  
Optical Waveguides ◽  
Thermoelectric Device ◽  
Force Microscopy ◽  
Prism Coupler ◽  
Atomic Force ◽  
Propagation Losses ◽  
Evaporation Technique ◽  
Scanning Detection ◽  
Zns Films

Zinc sulfide (ZnS) thin films as the waveguide medium have been deposited onto oxidized silicon wafer substrates at cold temperature (Tcold = –50oC) and ambient temperature (Tambient = 25oC) by thermal evaporation technique. The surface morphology of ZnS films were pictured with an atomic force microscopy (AFM) and the surface roughness were calculated from the AFM images. The propagation losses of the samples were measured using a scanning detection technique attached to a prism coupler. The AFM results revealed that the surface of cold deposited ZnS film is rougher than the surface of ambient deposited ZnS film. The propagation losses of the cold deposited ZnS waveguide are consistently lower than the ambient deposited ZnS waveguide at all measured wavelengths.

Low‐loss GaAsp+n−n+three‐dimensional optical waveguides

1976 ◽  
Vol 28 (10) ◽  
pp. 616-619 ◽  
Author(s):  
F. J. Leonberger ◽  
J. P. Donnelly ◽  
C. O. Bozler
Keyword(s):  
Optical Waveguides ◽  
Three Dimensional ◽  
Low Loss

Three-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

2007 ◽  
Author(s):  
Jia Cheng ◽  
Yu Zhu ◽  
Guanghong Duan ◽  
Yangying Chen
Keyword(s):  
Electron Temperature ◽  
Inductively Coupled Plasma ◽  
Three Dimensional ◽  
Argon Plasma ◽  
Plasma Parameters ◽  
Inductively Coupled ◽  
Parameters Selection ◽  
Dimensional Distribution ◽  
Discharge Model ◽  
Discharge Simulation

Based on the commercial software, CFD-ACE+, a three-dimensional discharge model of an inductively coupled plasma (ICP) etcher was built. The spatial distributions of the electron temperature and the electron number density (END) of the argon plasma were simulated at 10 mTorr, 200 W and 200 sccm. One-dimensional distribution profiles of the plasma parameters above the wafer’s surface at different pressures and powers were compared. These results demonstrate that the END increases with both pressure and power. And the electron temperature decreases with pressure. The methods and conclusions can be used to provide some reference for the configurations of the chamber and the coil of the ICP equipment design and improvement and process parameters selection.

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