Advanced Approach to Modelling Quantum Well Semiconductor Lasers Based on the Quantum Boltzmann Equation: Green's Function Approach

2006 ◽  
Vol 3 (4) ◽  
pp. 463-478 ◽  
Author(s):  
Philip Weetman ◽  
Marek S. Wartak
1991 ◽  
Vol 240 ◽  
Author(s):  
K. A. Mäder ◽  
A. Baldereschi

ABSTRACTAn empirical tight-binding Koster-Slater approach is used to determine the electronic properties of ultrathin“quantum wells”in semiconducting host materials of the zincblende or diamond structure. The“quantum well”is viewed as a giant two-dimensional isoelectronic impurity, and treated in a perturbational Green's function approach. We present results on the AlAs/GaAs and on the InP/InAs systems.


2002 ◽  
Vol 09 (05n06) ◽  
pp. 1761-1763
Author(s):  
B. A. PAEZ ◽  
A. MORENO ◽  
H. MÉNDEZ

The one-dimensional quantum Boltzmann equation in linear transport approximation was solved using the nonequilibrium Green's function method, and based on the lifetime approximation. As an example, the effect of interactions with electric fields were included, and the thermoelectric power coefficient (α) was evaluated, based on calculations of the statistical density current in a stationary regime over the nonequilibrium distribution function, and by the Green's function method. Results are compared in order to explore the advantages of each one, in evaluating the other kinetic transport coefficients.


1991 ◽  
Vol 43 (2) ◽  
pp. 1500-1509 ◽  
Author(s):  
Shun-Lien Chuang ◽  
Stefan Schmitt-Rink ◽  
David A. B. Miller ◽  
Daniel S. Chemla

1994 ◽  
Vol 50 (11) ◽  
pp. 7582-7586 ◽  
Author(s):  
Gyungock Kim ◽  
Young-Wan Choi ◽  
Pyoung Woon Park ◽  
Hye Yong Chu ◽  
El-Hang Lee ◽  
...  

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