Electronic Properties of Ultrathin Isoelectronic Intralayers in Semiconductors
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ABSTRACTAn empirical tight-binding Koster-Slater approach is used to determine the electronic properties of ultrathin“quantum wells”in semiconducting host materials of the zincblende or diamond structure. The“quantum well”is viewed as a giant two-dimensional isoelectronic impurity, and treated in a perturbational Green's function approach. We present results on the AlAs/GaAs and on the InP/InAs systems.
1981 ◽
Vol 107
(2)
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pp. 529-533
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2007 ◽
Vol 7
(4)
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pp. 287-298
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2007 ◽
Vol 47
(4)
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pp. 741-746
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