Exciton Green’s-function approach to optical absorption in a quantum well with an applied electric field

1991 ◽  
Vol 43 (2) ◽  
pp. 1500-1509 ◽  
Author(s):  
Shun-Lien Chuang ◽  
Stefan Schmitt-Rink ◽  
David A. B. Miller ◽  
Daniel S. Chemla
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Green’S Function ◽  
Green's Function ◽  
Applied Electric Field ◽  
Function Approach

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

Electronic Properties of Ultrathin Isoelectronic Intralayers in Semiconductors

1991 ◽  
Vol 240 ◽  
Author(s):  
K. A. Mäder ◽  
A. Baldereschi
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Green’S Function ◽  
Electronic Properties ◽  
Green's Function ◽  
Tight Binding ◽  
Function Approach ◽  
Diamond Structure ◽  
Two Dimensional ◽  
Host Materials

ABSTRACTAn empirical tight-binding Koster-Slater approach is used to determine the electronic properties of ultrathin“quantum wells”in semiconducting host materials of the zincblende or diamond structure. The“quantum well”is viewed as a giant two-dimensional isoelectronic impurity, and treated in a perturbational Green's function approach. We present results on the AlAs/GaAs and on the InP/InAs systems.

Two-Colour Mid-Infrared Optical Absorption under Electric Field in an InAs/GaSb-Based Type II and Broken-Gap Quantum Well

2011 ◽  
Vol 130-134 ◽  
pp. 4122-4125
Author(s):  
X.F. Wei ◽  
J.F. Ruan ◽  
C.G. Xie ◽  
H. Yuan ◽  
J. Song
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Type Ii ◽  
Mid Infrared ◽  
Material Layer ◽  
Broken Gap ◽  
Small Overlap

The optical absorptions are calculated in an InAs/GaSb-based type II and broken-gap quantum well under applied electric field. Two absorption peaks were observed through intraband transitions within the same material layer. The absorption induced by the interlayer transition is rather weak due to the small overlap of electron and hole wavefunctions. The optical absorption can be significantly affected by the applied electric field. Our results suggest that InAs/GaSb-based type II and broken-gap QWs can be employed as two-colour photodetectors, which can be controlled by the applied electric field.

Green’s-function approach to the electronic structure of double-barrier quantum-well heterostructures

1994 ◽  
Vol 50 (11) ◽  
pp. 7582-7586 ◽  
Author(s):  
Gyungock Kim ◽  
Young-Wan Choi ◽  
Pyoung Woon Park ◽  
Hye Yong Chu ◽  
El-Hang Lee ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Quantum Well ◽  
Green’S Function ◽  
Green's Function ◽  
Function Approach ◽  
Double Barrier
Sign in / Sign up

Export Citation Format

Share Document