pH Sensing Characteristics of Silicon on Insulator (SOI) Junctionless (JL) Ion-Sensitive Field-Effect Transistor

2016 ◽  
Vol 8 (12) ◽  
pp. 960-967
Author(s):  
. Ajay ◽  
Rakhi Narang ◽  
Manoj Saxena ◽  
Mridula Gupta
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon On Insulator ◽  
Ph Sensing ◽  
Effect Transistor ◽  
Sensing Characteristics

scholarly journals pH-Sensing Characteristics of Hydrothermal Al-Doped ZnO Nanostructures

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Jyh-Liang Wang ◽  
Po-Yu Yang ◽  
Tsang-Yen Hsieh ◽  
Chuan-Chou Hwang ◽  
Miin-Horng Juang
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Oxide Semiconductor ◽  
Ph Sensing ◽  
Sensing Properties ◽  
Electrochemical Application ◽  
Growth Method ◽  
Effect Transistor ◽  
Doped Zno ◽  
Sensing Characteristics

Highly sensitive and stable pH-sensing properties of an extended-gate field-effect transistor (EGFET) based on the aluminum-doped ZnO (AZO) nanostructures have been demonstrated. The AZO nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C. The AZO sensing nanostructures were connected with the metal-oxide-semiconductor field-effect transistor (MOSFET). Afterwards, the current-voltage (I-V) characteristics and the sensing properties of the pH-EGFET sensors were obtained in different buffer solutions, respectively. As a result, the pH-sensing characteristics of AZO nanostructured pH-EGFET sensors with Al dosage of 3 at.% can exhibit the higher sensitivity of 57.95 mV/pH, the larger linearity of 0.9998, the smaller deviation of 0.023 in linearity, the lower drift rate of 1.27 mV/hour, and the lower threshold voltage of 1.32 V with a wider sensing range (pH 1 ~ pH 13). Hence, the outstanding stability and durability of AZO nanostructured ionic EGFET sensors are attractive for the electrochemical application of flexible and disposable biosensor.

pH Sensing Characteristics of Extended-Gate Field-Effect Transistor with Al2O3 Layer

2019 ◽  
Vol 19 (10) ◽  
pp. 6682-6686 ◽  
Author(s):  
Jae Kwon ◽  
Yong Kyoung Yoo ◽  
Jeong Hoon Lee ◽  
Jae-Hyuk Ahn
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensing ◽  
Al2o3 Layer ◽  
Effect Transistor ◽  
Sensing Characteristics

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

scholarly journals Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing

Sensors ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 2178 ◽  
Author(s):  
Shaili Falina ◽  
Sora Kawai ◽  
Nobutaka Oi ◽  
Hayate Yamano ◽  
Taisuke Kageura ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensing ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Effect Transistor

Identification of types of membrane injuries and cell death using whole cell-based proton-sensitive field-effect transistor systems

The Analyst ◽  
2017 ◽  
Vol 142 (18) ◽  
pp. 3451-3458 ◽  
Author(s):  
Yuki Imaizumi ◽  
Tatsuro Goda ◽  
Akira Matsumoto ◽  
Yuji Miyahara
Keyword(s):  
Cell Death ◽  
Mammalian Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensing ◽  
Membrane Injury ◽  
Whole Cell ◽  
Sensing Systems ◽  
Effect Transistor ◽  
Chemical Stimuli

Membrane injury and apoptosis of mammalian cells by chemical stimuli were distinguished using ammonia-perfused continuous pH-sensing systems.

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