pH Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Al-Doped ZnO Nanostructures Hydrothermally Synthesized at Low Temperatures

2011 ◽  
Vol 32 (11) ◽  
pp. 1603-1605 ◽  
Author(s):  
Po-Yu Yang ◽  
Jyh-Liang Wang ◽  
Po-Chun Chiu ◽  
Jung-Chuan Chou ◽  
Cheng-Wei Chen ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Zno Nanostructures ◽  
Ph Sensing ◽  
Effect Transistor ◽  
Doped Zno ◽  
Sensing Characteristics

scholarly journals pH-Sensing Characteristics of Hydrothermal Al-Doped ZnO Nanostructures

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Jyh-Liang Wang ◽  
Po-Yu Yang ◽  
Tsang-Yen Hsieh ◽  
Chuan-Chou Hwang ◽  
Miin-Horng Juang
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Oxide Semiconductor ◽  
Ph Sensing ◽  
Sensing Properties ◽  
Electrochemical Application ◽  
Growth Method ◽  
Effect Transistor ◽  
Doped Zno ◽  
Sensing Characteristics

Highly sensitive and stable pH-sensing properties of an extended-gate field-effect transistor (EGFET) based on the aluminum-doped ZnO (AZO) nanostructures have been demonstrated. The AZO nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C. The AZO sensing nanostructures were connected with the metal-oxide-semiconductor field-effect transistor (MOSFET). Afterwards, the current-voltage (I-V) characteristics and the sensing properties of the pH-EGFET sensors were obtained in different buffer solutions, respectively. As a result, the pH-sensing characteristics of AZO nanostructured pH-EGFET sensors with Al dosage of 3 at.% can exhibit the higher sensitivity of 57.95 mV/pH, the larger linearity of 0.9998, the smaller deviation of 0.023 in linearity, the lower drift rate of 1.27 mV/hour, and the lower threshold voltage of 1.32 V with a wider sensing range (pH 1 ~ pH 13). Hence, the outstanding stability and durability of AZO nanostructured ionic EGFET sensors are attractive for the electrochemical application of flexible and disposable biosensor.

pH Sensing Characteristics of Extended-Gate Field-Effect Transistor with Al2O3 Layer

2019 ◽  
Vol 19 (10) ◽  
pp. 6682-6686 ◽  
Author(s):  
Jae Kwon ◽  
Yong Kyoung Yoo ◽  
Jeong Hoon Lee ◽  
Jae-Hyuk Ahn
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensing ◽  
Al2o3 Layer ◽  
Effect Transistor ◽  
Sensing Characteristics

scholarly journals Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing

Sensors ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 2178 ◽  
Author(s):  
Shaili Falina ◽  
Sora Kawai ◽  
Nobutaka Oi ◽  
Hayate Yamano ◽  
Taisuke Kageura ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensing ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Effect Transistor

Identification of types of membrane injuries and cell death using whole cell-based proton-sensitive field-effect transistor systems

The Analyst ◽  
2017 ◽  
Vol 142 (18) ◽  
pp. 3451-3458 ◽  
Author(s):  
Yuki Imaizumi ◽  
Tatsuro Goda ◽  
Akira Matsumoto ◽  
Yuji Miyahara
Keyword(s):  
Cell Death ◽  
Mammalian Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensing ◽  
Membrane Injury ◽  
Whole Cell ◽  
Sensing Systems ◽  
Effect Transistor ◽  
Chemical Stimuli

Membrane injury and apoptosis of mammalian cells by chemical stimuli were distinguished using ammonia-perfused continuous pH-sensing systems.

scholarly journals Graphene Channel Liquid Container Field Effect Transistor as pH Sensor

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xin Li ◽  
Junjie Shi ◽  
Junchao Pang ◽  
Weihua Liu ◽  
Hongzhong Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Value ◽  
Ph Sensor ◽  
Drain Current ◽  
Fast Response ◽  
Monolayer Graphene ◽  
Ph Sensing ◽  
Order Of Magnitude ◽  
Effect Transistor

Graphene channel liquid container field effect transistor pH sensor with interdigital microtrench for liquid ion testing is presented. Growth morphology and pH sensing property of continuous few-layer graphene (FLG) and quasi-continuous monolayer graphene (MG) channels are compared. The experiment results show that the source-to-drain current of the graphene channel FET has a significant and fast response after adsorption of the measured molecule and ion at the room temperature; at the same time, the FLG response time is less than 4 s. The resolution of MG (0.01) on pH value is one order of magnitude higher than that of FLG (0.1). The reason is that with fewer defects, the MG is more likely to adsorb measured molecule and ion, and the molecules and ions can make the transport property change. The output sensitivities of MG are from 34.5% to 57.4% when the pH value is between 7 and 8, while sensitivity of FLG is 4.75% when thepH=7. The sensor fabrication combines traditional silicon technique and flexible electronic technology and provides an easy way to develop graphene-based electrolyte gas sensor or even biological sensors.

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