scholarly journals Nano-Scale Observations of Tattoo Pigments in Skin by Atomic Force Microscopy

2015 ◽  
pp. 97-102
Author(s):  
Colin A. Grant ◽  
Peter C. Twigg ◽  
Desmond J. Tobin
Keyword(s):  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Nano Scale ◽  
Atomic Force

Nano-scale imaging of chromosomes and DNA by scanning near-field optical/atomic force microscopy

2003 ◽  
Vol 97 (1-4) ◽  
pp. 81-87 ◽  
Author(s):  
Tomoyuki Yoshino ◽  
Shigeru Sugiyama ◽  
Shoji Hagiwara ◽  
Daisuke Fukushi ◽  
Motoharu Shichiri ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Near Field ◽  
Force Microscopy ◽  
Nano Scale ◽  
Atomic Force

Nano scale defects in langmuir-blodgett film observed by atomic force microscopy

1993 ◽  
Vol 57 (1) ◽  
pp. 3795-3800 ◽  
Author(s):  
J. Garnaes ◽  
D.K. Schwartz ◽  
R. Viswanathan ◽  
J.A.N. Zasadzinski
Keyword(s):  
Atomic Force Microscopy ◽  
Blodgett Film ◽  
Force Microscopy ◽  
Langmuir Blodgett ◽  
Nano Scale ◽  
Atomic Force ◽  
Langmuir Blodgett Film

Fundamental frequencies of a nano beam used for atomic force microscopy (AFM) in tapping mode

MRS Advances ◽  
2018 ◽  
Vol 3 (42-43) ◽  
pp. 2617-2626 ◽  
Author(s):  
MALESELA K. MOUTLANA ◽  
SARP ADALI
Keyword(s):  
Atomic Force Microscopy ◽  
Degree Of Freedom ◽  
Small Scale ◽  
Single Degree Of Freedom ◽  
Tapping Mode ◽  
Force Microscopy ◽  
Single Degree ◽  
Nano Scale ◽  
Atomic Force ◽  
Tip Mass

ABSTRACTIn this study we investigate the motion of a torsionally restrained beam used in tapping mode atomic force microscopy (TM-AFM), with the aim of manufacturing at nano-scale. TM-AFM oscillates at high frequency in order to remove material or shape nano structures. Euler-Bernoulli theory and Eringen’s theory of non-local continuum are used to model the nano machining structure composed of two single degree of freedom systems. Eringen’s theory is effective at nano-scale and takes into account small-scale effects. This theory has been shown to yield reliable results when compared to modelling using molecular dynamics.The system is modelled as a beam with a torsional boundary condition at one end; and at the free end is a transverse linear spring attached to the tip. The other end of the spring is attached to a mass, resulting in a single degree of freedom spring-mass system. The motion of the tip of the beam and tip mass can be investigated to observe the tip frequency response, displacement and contact force. The beam and spring–mass frequencies contain information about the maximum displacement amplitude and therefore the sample penetration depth and this allows

Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy

2007 ◽  
Vol 556-557 ◽  
pp. 545-548 ◽  
Author(s):  
Filippo Giannazzo ◽  
Fabrizio Roccaforte ◽  
S.F. Liotta ◽  
Vito Raineri
Keyword(s):  
Atomic Force Microscopy ◽  
Schottky Barrier ◽  
Schottky Contact ◽  
Surface Preparation ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Nano Scale ◽  
Atomic Force ◽  
Novel Approach ◽  
Inhomogeneous Character

We present a novel approach based on conductive atomic force microscopy (c-AFM) for nano-scale mapping of the Schottky barrier height (SBH) between a semiconductor and an ultrathin (1-5 nm) metal film. The method was applied to characterize the uniformity of the Au/4H-SiC Schottky contact, which is attractive for applications due to the high reported (∼1.8 eV) SBH value. Since this system is very sensitive to the SiC surface preparation, we investigated the effect on the nano-scale SBH distribution of a ∼2 nm thick not uniform SiO2 layer. The macroscopic I-V characteristics on Au/SiC and Au/not uniform SiO2/SiC diodes showed that the interfacial oxide lowers the average SBH. The c-AFM investigation is carried out collecting arrays of I-V curves for different tip positions on 1μm×1μm area. From these curves, 2D SBH maps are obtained with 10- 20 nm spatial resolution and energy resolution <0.1 eV. The laterally inhomogeneous character of the Au/SiC contact is demonstrated. In fact, a SBH distribution peaked at 1.8 eV and with tails from 1.6 eV to 2.1 eV is obtained. Moreover, in the presence of the not uniform oxide at the interface, the SBH distribution exhibits a 0.3 eV peak lowering and a broadening (tails from 1.1 eV to 2.1 eV).

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