scholarly journals Texture Control in Thin Films Using Ion Bombardment

2000 ◽  
Vol 34 (2-3) ◽  
pp. 105-118
Author(s):  
G. S. Was ◽  
H. Ji ◽  
Z. Ma
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Ion Bombardment ◽  
Preferential Growth ◽  
Aluminum Films ◽  
Ion Channeling ◽  
Preferential Sputtering ◽  
Thin Aluminum ◽  
Out Of Plane ◽  
The Difference

The development of texture in thin films under ion bombardment is believed to occur due to the preferential growth of the aligned grains in the film relative to the unaligned grains. The difference in growth rates between aligned and unaligned grains results in the development of texture with increasing thickness. Both out-of-plane (fiber) and in-plane texture can be controlled during ion bombardment. Experiments were performed to create a (110) out-of-plane texture in thin aluminum films and to create a (110) in-plane texture in niobium films. Results showed that the texture in both cases increases in strength with depth, and that for 500 nm Al films, the (110) texture was stronger than the thermodynamically-preferred (111) texture obtained by physical vapor deposition. Results confirm a texturing mechanism based on ion channeling and preferential sputtering.

Determination of the anisotropic optical properties for perfluorinated vanadyl phthalocyanine thin films

2004 ◽  
Vol 19 (7) ◽  
pp. 2008-2013 ◽  
Author(s):  
O.D. Gordan ◽  
M. Friedrich ◽  
W. Michaelis ◽  
R. Kröger ◽  
T. Kampen ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Optical Constants ◽  
High Vacuum ◽  
Visible Region ◽  
Fused Silica ◽  
Out Of Plane ◽  
The Difference ◽  
Silica Substrates

Thin films of perfluorinated vanadyl phthalocyanine F16PcVO were prepared by physical vapor deposition in high vacuum on KBr and fused silica substrates. The absorption spectra in the visible region show that the films on different substrates have different structure. The optical constants for F16PcVO films were obtained in the spectral range of 0.7–4.5 eV from the simulation of ellipsometry spectra with an anisotropic uniaxial model. From the difference between the in-plane and out-of-plane components of the extinction coefficient the average tilt angle of the F16PcVO molecular planes with respect to the substrate plane was found to be 56° for fused silica substrates and between 0° and 3° for KBr substrates.

FREQUENCY DEPENDENT PHONON TRANSPORT IN TWO-DIMENSIONAL SILICON AND DIAMOND THIN FILMS

2012 ◽  
Vol 26 (17) ◽  
pp. 1250104 ◽  
Author(s):  
B. S. YILBAS ◽  
S. BIN MANSOOR
Keyword(s):  
Thin Films ◽  
Boltzmann Transport Equation ◽  
Diamond Films ◽  
Equilibrium Temperature ◽  
Phonon Transport ◽  
Two Dimensional ◽  
Boltzmann Transport ◽  
Frequency Dependent ◽  
Aluminum Films ◽  
The Difference

Phonon transport in two-dimensional silicon and aluminum films is investigated. The frequency dependent solution of Boltzmann transport equation is obtained numerically to account for the acoustic and optical phonon branches. The influence of film size on equivalent equilibrium temperature distribution in silicon and aluminum films is presented. It is found that increasing film width influences phonon transport in the film; in which case, the difference between the equivalent equilibrium temperature due to silicon and diamond films becomes smaller for wider films than that of the thinner films.

CHARACTERIZATION OF CHAOTICITY IN THE TRANSIENT CURRENT THROUGH PMMA THIN FILMS

Fractals ◽  
2006 ◽  
Vol 14 (02) ◽  
pp. 125-131 ◽  
Author(s):  
A. HACINLIYAN ◽  
Y. SKARLATOS ◽  
H. A. YILDIRIM ◽  
G. SAHIN
Keyword(s):  
Thin Films ◽  
Time Series ◽  
Lyapunov Exponent ◽  
Power Law ◽  
Chaotic Behavior ◽  
Transient Current ◽  
Positive Lyapunov Exponent ◽  
Aluminum Films ◽  
Thin Aluminum

Chaotic behavior in the transient current through thin Aluminum-PMMA-Aluminum films has been analyzed for times ranging up to 30,000s, in the temperature range 293–363K for applied voltages in the range 10–80V. Time series analysis reveals a positive Lyapunov exponent consistently and reproducibly throughout this range. Power law relaxation as reflected by the autocorrelation function and the positive Lyapunov exponent show parallel behaviors as a function of applied electric field.

THERMAL STRESS BEHAVIOR IN NANO-SIZE THIN ALUMINUM FILMS

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4691-4696 ◽  
Author(s):  
TAKAO HANABUSA ◽  
KAZUYA KUSAKA ◽  
SHOSO SHINGUBARA ◽  
OSAMI SAKATA
Keyword(s):  
Thin Films ◽  
Thermal Stress ◽  
Synchrotron Radiation ◽  
Thermal Stresses ◽  
In Situ Observation ◽  
Aluminum Films ◽  
Stress Behavior ◽  
Thin Aluminum ◽  
20 Nm ◽  
Nano Size

In-situ observation of thermal stresses in thin films deposited on a silicon substrate was made by synchrotron radiation. Specimens prepared in this experiment were nano-size thin aluminum films with SiO 2 passivation. The thickness of the films was 10 nm, 20 nm and 50 nm. Synchrotron radiation revealed the diffraction intensities for these thin films and make possible to measure stresses in nano-size thin films. Residual stresses in the as-deposited state were tensile. Compressive stresses were developed in a heating cycle up to 300°C and tensile stresses were developed in a cooling cycle. The thermal stresses in the 50 nm film showed linear behavior in the first heating stage from room temperature to 250°C followed by no change in the stress at 300°C, however, linearly behaved in the second cycle. On the other hand, the thermal stresses in 20 nm and 10 nm films almost linearly behaved without any hysteresis in increasing and decreasing temperature cycles. The mechanism of thermal stress behavior in thin films can be explained by strengthening of the nano-size thin films due to inhibition of dislocation source and dislocation motion.

Aluminum metallization for flat-panel displays using ion-beam-assisted physical vapor deposition

1999 ◽  
Vol 14 (10) ◽  
pp. 4051-4061 ◽  
Author(s):  
Zhenqiang Ma ◽  
Gary S. Was
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Surface Topology ◽  
Aluminum Films ◽  
Force Microscopy ◽  
Ion Beam Assisted Deposition ◽  
Out Of Plane ◽  
Aluminum Metallization ◽  
Display Control

Failures in aluminum interconnects in display control devices are often caused by the formation of hillocks during postdeposition annealing. Ion-beam-assisted deposition was used to create a (110) out-of-plane texture in aluminum films to suppress hillocking. X-ray diffraction was used to quantify the (110)/(111) out-of-plane texture ratio, and scanning electron microscopy and atomic force microscopy were used to characterize the surface topology. Results show that no hillocks were observed on (110)-textured aluminum films following annealing for 30 min at 450 °C. Following annealing, the resistivity of the films made by ion-beam-assisted deposition recovered to within a factor of 2 of the physical-vapor-deposition films. Results show that ion-beam-assisted deposition can effectiv09ely modify the aluminum out-of-plane texture in such a way that hillock suppression can be achieved without significant change in resistivity.

scholarly journals Strain states and relaxation for $$\alpha$$-(Al$$_x$$Ga$$_{1-x}$$)$$_2$$O$$_3$$ thin films on prismatic planes of $$\alpha$$-Al$$_2$$O$$_3$$ in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt

2021 ◽  
Author(s):  
Max Kneiß ◽  
Daniel Splith ◽  
Holger von Wenckstern ◽  
Michael Lorenz ◽  
Thorsten Schultz ◽  
...  
Keyword(s):  
Thin Films ◽  
Shear Strain ◽  
Elasticity Theory ◽  
Composition Range ◽  
Strain Relaxation ◽  
Elastic Stiffness ◽  
Axis Direction ◽  
Out Of Plane ◽  
The Difference ◽  
Pseudomorphic Growth

Abstract Pseudomorphic and relaxed $$\alpha$$ α -(Al$$_x$$ x Ga$$_{1-x}$$ 1 - x )$$_2$$ 2 O$$_3$$ 3 thin films are grown by combinatorial pulsed laser deposition in the entire composition range on prismatic a- and m-plane $$\alpha$$ α -Al$$_2$$ 2 O$$_3$$ 3 substrates. Pseudomorphic growth on m-plane sapphire has been achieved for $$x \ge 0.45$$ x ≥ 0.45 . A distinct difference between the a- and m-epitaxial plane is observed in reciprocal space map measurements being in agreement with continuum elasticity theory for rhombohedral heterostructures. While pseudomorphic layers on m-plane sapphire show a pronounced shear strain $$e'_5$$ e 5 ′ along the c-axis direction, relaxed layers exhibit a global lattice tilt in the same direction. Both effects are not present on the a-epitaxial plane. Out-of-plane lattice constants as well as $$e'_5$$ e 5 ′ are modeled as function of x employing elasticity theory, confirming theoretical values of the elastic stiffness tensor for $$\alpha$$ α -Ga$$_2$$ 2 O$$_3$$ 3 , especially the non-zero value of the $$C_{14}$$ C 14 component. Possible pyramidal slip systems for strain relaxation in c-axis direction are examined to explain and numerically model the difference in lattice tilt for the two substrate orientations. Graphic abstract

scholarly journals Interface Effects on the Adhesion of Thin Aluminum Films

1997 ◽  
Vol 472 ◽  
Author(s):  
J.A. Schneider ◽  
S. Guthrie ◽  
N.R. Moody
Keyword(s):  
Thin Films ◽  
Fracture Toughness ◽  
Vapor Deposition ◽  
Scratch Testing ◽  
Aluminum Films ◽  
Sapphire Substrates ◽  
Thin Aluminum ◽  
Scratch Tests ◽  
Interface Effects

ABSTRACTDifferences in the adhesion and fracture toughness of aluminum films on sapphire due to the presence of controlled contaminants are being investigated. Adhesion is evaluated by use of nanoindentation and continuous scratch tests. A comparison was made of the properties of textured thin films of aluminum (178 to 1890 nm) that were vapor deposited onto (0001) oriented sapphire substrates. A very thin (1 nm) layer of carbon was deposited at the interface of selected samples prior to the vapor deposition of the aluminum. Spalling was observed during continuous scratch testing in specimens with carbon at the interface but not in specimens without carbon at the interface.

In Situ Observation of Thermal Stress in Nano-Size Thin Aluminum Films

2005 ◽  
Vol 490-491 ◽  
pp. 577-582
Author(s):  
Hanabusa Takao ◽  
Kazuya Kusaka ◽  
Shozo Shingubara ◽  
Osamu Sakata
Keyword(s):  
Thin Films ◽  
Thermal Stress ◽  
Thermal Stresses ◽  
In Situ Observation ◽  
Heating Cycle ◽  
Cooling Cycle ◽  
Aluminum Films ◽  
Thin Aluminum ◽  
Nano Size

In-situ observation of thermal stress in thin films deposited on a silicon substrate was made by synchrotron radiations. The specimens prepared in this experiment were nano-size thin aluminum films with SiO2 passivation. The thickness of the films was 10 nm, 20 nm and 50 nm. Residual stress in the as-deposited state was tensile. Compressive stress was developed in the heating cycle up to 300 oC and tensile stresses developed in the cooling cycle. The thermal stresses in the 50 nm film showed non-linear behavior in the first heating cycle from the room temperature to 300 oC. However, they linearly behaved in the first cooling cycle and the second thermal cycle. On the other hand, the thermal stresses in the 10 nm film behaved almost linearly without any hysteresis in the first and the second thermal cycles. The mechanism of thermal stress behavior of thin films is discussed.

Observations on Electrotransport in Thin Aluminum Films Using Resistance Measurements *

1971 ◽  
Vol 26 (1) ◽  
pp. 36-39 ◽  
Author(s):  
R. E. Hummel ◽  
H. M. Breitling
Keyword(s):  
Ion Accumulation ◽  
High Current ◽  
Uncoated Sample ◽  
Aluminum Films ◽  
Thin Aluminum ◽  
Current Densities ◽  
The Difference

Abstract Resistance measurements of five different portions of uncoated and partially SiO-overcoated aluminum stripes are reported. In specimens of both types the resistance increases at the cathode when the stripe is subjected to high current densities. In partially coated specimens the resistance decreases at the anode whereas it remains constant in the uncoated sample. The difference in behavior at the anode between coated and uncoated specimens is interpreted as being due to dif­ferences of ion accumulation: In the uncoated films hillocks are formed whereas in the specimen with partial overcoat the ions accumulate more to support this interpretation

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

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