scholarly journals Hybrid Voltage Regulator for Automobiles

1981 ◽  
Vol 8 (3-4) ◽  
pp. 229-233
Author(s):  
Akihiro Sawamura ◽  
Tadashi Takahashi ◽  
Sei-Ichi Denda
Keyword(s):  
Thick Film ◽  
Temperature Cycling ◽  
Voltage Regulators ◽  
Voltage Regulator ◽  
Reverse Voltage ◽  
Pattern Design ◽  
Blocking Voltage ◽  
Reverse Blocking ◽  
Automobile Use ◽  
Surge Current

In the course of the development of hybrid voltage regulators for automobile use, increasing the reverse blocking voltage with decreasing of saturation voltage for output power darlington transistors, the capability of monolithic IC chip against surge pulses generated in cars, and an improvement of the pattern design of thick film in order to withstand temperature cycling, have been important subjects. Power darlingtons have more than 150 V of reverse voltage as well as large secondary breakdown capacity and less than 1.2 V of saturation voltage. A monolithic chip having small saturation voltage and more than 500 mA of surge current capability, has been developed. A neck-shaped thick film pattern was developed to make soldering in a controlled manner. The problems in the earlier stage with surge current and temperature cycling have been almost solved by these improvements.In this paper the characteristics of the transistor and the monolithic chip the structure of the device and related problems observed in temperature cycling are described.

5.5 kV Bipolar Diodes From High Quality CVD 411-SiC

1998 ◽  
Vol 512 ◽  
Author(s):  
K. G. Irvine ◽  
R. Singh ◽  
M. J. Paisley ◽  
J. W. Palmour ◽  
O. Kordina ◽  
...  
Keyword(s):  
Thick Film ◽  
High Power ◽  
Growth Process ◽  
Carrier Lifetime ◽  
Voltage Drop ◽  
Power Devices ◽  
High Quality ◽  
Thickness Uniformity ◽  
Blocking Voltage ◽  
Reverse Blocking

ABSTRACTThick, high quality 4H-SiC material suitable for high power devices has been grown in a hot-wall reactor. Recent improvements to the growth process have improved our thickness uniformity over a 50mm wafer to less than 1% and the doping uniformity to less than 5%, both values expressed as σ/mean.A record breaking reverse blocking voltage of 5.5 kV was obtained on P-i-N diodes fabricated from a 85μm thick film. The on-state voltage drop was 5.4 V at 100 A/cm2. From this on-state voltage drop, the carrier lifetime was estimated in excess of 1μs.

scholarly journals A Mass Production of Thick-Film Car Voltage Regulators

1978 ◽  
Vol 5 (1) ◽  
pp. 45-48 ◽  
Author(s):  
D. A. Bianchi ◽  
P. Faravelli ◽  
G. S. Rodari
Keyword(s):  
Thick Film ◽  
Mass Production ◽  
Functional Performance ◽  
Point Of View ◽  
Voltage Regulators ◽  
Voltage Regulator ◽  
Active Devices

The technological solutions chosen for a car-voltage regulator now in mass production (thick-film hybrid with standard encapsulated active devices) are discussed from the point of view of functional performance, producibility and reliability.

Predicting the Effect of Tire Tread Pattern Design on Thick Film Wet Traction

1977 ◽  
Vol 5 (1) ◽  
pp. 6-28 ◽  
Author(s):  
A. L. Browne
Keyword(s):  
Experimental Data ◽  
Network Design ◽  
Thick Film ◽  
Digital Computer ◽  
Analytical Tool ◽  
Design Practice ◽  
Pattern Design ◽  
Performance Results ◽  
Good Agreement

Abstract An analytical tool is presented for the prediction of the effects of changes in tread pattern design on thick film wet traction performance. Results are reported for studies in which the analysis, implemented on a digital computer, was used to determine the effect of different tread geometry features, among these being the number, width, and lateral spacing of longitudinal grooves and the angle of zigzags in longitudinal grooves, on thick film wet traction. These results are shown to be in good agreement with experimental data appearing in the literature and are used to formulate guidelines for tread groove network design practice.

Design and Fabrication of Vertical Metal/TiO2/β-Ga2O3 Dielectric Heterojunction Diode With Reverse Blocking Voltage of 1010 V

2020 ◽  
Vol 67 (12) ◽  
pp. 5628-5632
Author(s):  
Zhuangzhuang Hu ◽  
Jianguo Li ◽  
Chunyong Zhao ◽  
Zhaoqing Feng ◽  
Xusheng Tian ◽  
...  
Keyword(s):  
Heterojunction Diode ◽  
Blocking Voltage ◽  
Reverse Blocking

scholarly journals Minimum dropout voltage on a serial pnp transistor of a moderately loaded voltage regulator in a gamma radiation field

2012 ◽  
Vol 27 (4) ◽  
pp. 333-340 ◽  
Author(s):  
Vladimir Vukic
Keyword(s):  
Integrated Circuit ◽  
High Current Density ◽  
Negative Influence ◽  
Radiation Hardness ◽  
Voltage Regulators ◽  
Current Gain ◽  
Voltage Regulator ◽  
Emitter Current ◽  
Moderate Load ◽  
Loaded Voltage

The main examined value in an experiment performed on moderately loaded voltage regulators was the serial pnp transistor?s minimum dropout voltage, followed by the data on the base current and forward emitter current gain. Minimum dropout voltage decreased by up to 12%, while the measured values of the forward emitter current gain decreased by 20-40% after the absorption of a total ionizing dose of 500 Gy. The oxide trapped charge increased the radiation tolerance of the serial lateral pnp transistor owing to the suppression of interface trap formation above the base area. Current flow through the serial transistor of the voltage regulator had an influence on the decrease in the power pnp transistor?s forward emitter current gain. Due to the operation with a moderate load of 100 mA, loss of emitter injection efficiency was not as important as during the operation with high current density, thus eliminating the negative influence of emitter crowding on the radiation hardness of the voltage regulator. For a moderate load, gain in the negative feedback reaction was enough to keep output voltage in the anticipated range. Only information procured from tests of the minimum dropout voltage on the moderately loaded voltage regulators were not sufficient for unequivocal determination of the examined integrated circuit?s radiation hardness.

“Has Microelectronic MCM Technology Matured and is it Capable of Servicing the Widespread Needs of Down Well 225°C Operating Applications in the Oil and Gas Industry?”

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000319-000324
Author(s):  
Bob Hunt ◽  
Andy Tooke
Keyword(s):  
Thermal Shock ◽  
Thick Film ◽  
Oil And Gas ◽  
Elevated Temperatures ◽  
Operating Temperature ◽  
Oil And Gas Industry ◽  
Temperature Cycling ◽  
Active Components ◽  
Gas Industry

This paper reviews development and qualification work performed on 225°C operating temperature modules based on ceramic thick film multi-layer substrates supporting embedded thick film resistors, assembled passive and active components with ‘chip and wire’ connections and sealing in hermetic metal and ceramic cavity packages. It considers aspects of development and importantly investigates product qualification which includes shock and vibration at elevated temperatures as well as thermal shock and temperature cycling. In conclusion there is an attempt to answer the question “Has microelectronic MCM technology matured and is it capable of servicing the widespread needs of down well 225 °C operating applications in the Oil and Gas industry?”

Fabrication and Characterisation of 1200V 4H-SiC VJFET

2014 ◽  
Vol 716-717 ◽  
pp. 1434-1437
Author(s):  
Gang Chen ◽  
Song Bai ◽  
Ao Liu ◽  
Run Hua Huang ◽  
Yong Hong Tao ◽  
...  
Keyword(s):  
High Temperature ◽  
Continuous Improvement ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Channel ◽  
Drain Current ◽  
Power Devices ◽  
Reverse Voltage ◽  
Blocking Voltage ◽  
Effect Transistor

Results are presented for the silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) fabricated based on in-house SiC epitaxial wafer suitable for power devices. We have demonstrated continuous improvement in blocking voltage, forward drain current under high temperature. The SiC VJFET device’s current density is 360 A/cm2 and current is 11 A at VG= 3 V and VD = 2 V, with related specific on-resistance 5.5 mΩ·cm2. The device exceeds 1200 V at gate bias VG = -10V. The current of the SiC VJFET device is 4 A and the reverse voltage is 1200V at the 200 °C high temperature.

scholarly journals Reliability Considerations of Flip Chip Components for Automotive Electronic Applications

1981 ◽  
Vol 9 (1) ◽  
pp. 87-92 ◽  
Author(s):  
Keisuke Sugiyama ◽  
Isao Bansaku ◽  
Naoharu Tsuzimoto ◽  
Iwao Tachikawa
Keyword(s):  
Thick Film ◽  
Environmental Conditions ◽  
Flip Chip ◽  
High Reliability ◽  
Electronic Devices ◽  
Electronic Equipment ◽  
Voltage Regulators ◽  
Automotive Electronic ◽  
Ic Technology ◽  
Thick Film Technology

Electronic devices for automotive electronic applications have to be operated under extreme environmental conditions and therefore are required to have higher reliability compared with general electronic equipment. Recently automotive voltage regulators, ignition systems, etc. have been changing from mechanical constructions to electronic ones using thick film technology.This paper presents results that shows that our flip chip IC technology can satisfy the high reliability requirements of automobile electronics.

Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing

2007 ◽  
Vol 556-557 ◽  
pp. 877-880 ◽  
Author(s):  
Akimasa Kinoshita ◽  
Takashi Nishi ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Surface Condition ◽  
High Temperature Annealing ◽  
Reverse Voltage ◽  
Edge Termination ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Blocking Voltage ◽  
The Relationship

Ion implantation and a subsequent annealing at high temperature are required for fabricating a high voltage Schottky Barrier Diode (SBD) with a field limiting ring (FLR) or a junction termination extension (JTE), but high temperature annealing degrades surface condition of a SiC substrate and induces a degradation of electronic characteristics of a fabricated SBD. To avoid a degradation of SBD electronic characteristics after high temperature annealing, the method of removing a degraded layer from a SiC surface by sacrificial oxidation after high temperature annealing is studied. In this study, we studied the relationship between the improvement of SBD electronic characteristics and the thickness of sacrificial oxide grown after high temperature annealing. 9~12 SBD without edge termination were fabricated on a SiC substrate of 4mm×4mm. The ratio of good chips to all chips (9~12 SBD) increases with increasing total thickness of sacrificial oxide grown after high temperature annealing at 1800oC for 30 s, where an SBD with a leakage current less than 1μA/cm2 at reverse voltage of –100V was defined as a good chip. We applied this process growing sacrificial oxide of 150nm after high temperature annealing to fabricate the SBD with an FLR structure designed with 600V blocking voltage on a Si-face SiC substrate. The SBD with an FLR structure through this process of 150 nm sacrificial oxide is low leakage current of less than 1μA/cm2 at reverse voltage of –100V and achieves 600V blocking voltage, however, the SBD with an FLR structure without the process of sacrificial oxide after high temperature annealing is high leakage current at reverse voltage of –100V. It is shown that this process growing sacrificial oxide after high temperature annealing is useful to fabricate an SBD with an FLR structure.

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