scholarly journals Reliability Considerations of Flip Chip Components for Automotive Electronic Applications

1981 ◽  
Vol 9 (1) ◽  
pp. 87-92 ◽  
Author(s):  
Keisuke Sugiyama ◽  
Isao Bansaku ◽  
Naoharu Tsuzimoto ◽  
Iwao Tachikawa
Keyword(s):  
Thick Film ◽  
Environmental Conditions ◽  
Flip Chip ◽  
High Reliability ◽  
Electronic Devices ◽  
Electronic Equipment ◽  
Voltage Regulators ◽  
Automotive Electronic ◽  
Ic Technology ◽  
Thick Film Technology

Electronic devices for automotive electronic applications have to be operated under extreme environmental conditions and therefore are required to have higher reliability compared with general electronic equipment. Recently automotive voltage regulators, ignition systems, etc. have been changing from mechanical constructions to electronic ones using thick film technology.This paper presents results that shows that our flip chip IC technology can satisfy the high reliability requirements of automobile electronics.

Reliable Metallization For InP-Based Devices and Oeic’s

1990 ◽  
Vol 181 ◽  
Author(s):  
O. Wada ◽  
O. Ueda
Keyword(s):  
Integrated Circuits ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
High Reliability ◽  
Electronic Devices ◽  
Barrier Effect ◽  
Light Emitting ◽  
Pin Photodiode ◽  
Metal Semiconductor Metal ◽  
Semiconductor Chips

ABSTRACTWe describe techniques of reliable metallization in InP-based systems for application to discrete and opto-electronic integrated circuits (OEIC’s). Strong metallurgical interaction between Au and InP-based compounds can cause serious contact degradation in light emitting diodes (LED’s). By analyzing this interaction in detail, an improved thin Au/Zn/Au p-contact technique has been developed. The results are compared with Pt/Ti contacts, and it has shown that both provide sufficient reliability under temperature and current stresses in LED’s. We then describe a metallization technique for flip-chip bonding of opto-electronic devices on other semiconductor chips for OEIC applications. An acceptable reaction barrier effect of Pt in AuSn/Pt/Ti metallization structure has been demonstrated and this structure has been used for a high-reliability, flip-chip integrated GalnAs/InP PIN photodiode/GaAs amplifier receiver circuit. We also discuss requirements for metallization for future monolithic OEIC’s by taking up an example of metal-semiconductor-metal photodiodes in InP-based systems.

Reliable Metallization for Inp-Based Devices and Oeic's

1990 ◽  
Vol 184 ◽  
Author(s):  
O. Wada ◽  
O. Ueda
Keyword(s):  
Integrated Circuits ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
High Reliability ◽  
Electronic Devices ◽  
Barrier Effect ◽  
Light Emitting ◽  
Pin Photodiode ◽  
Metal Semiconductor Metal ◽  
Semiconductor Chips

ABSTRACTWe describe techniques of reliable metallization in InP-based systems for application to discrete and opto-electronic integrated circuits (OEIC's). Strong metallurgical interaction between Au and InP-based compounds can cause serious contact degradation in light emitting diodes (LED's). By analyzing this interaction in detail, an improved thin Au/Zn/Au p-contact technique has been developed. The results are compared with Pt/Ti contacts, and it has shown that both provide sufficient reliability under temperature and current stresses in LED's. We then describe a metallization technique for flip-chip bonding of opto-electronic devices on other semiconductor chips for OEIC applications. An acceptable reaction barrier effect of Pt in AuSn/Pt/Ti metallization structure has been demonstrated and this structure has been used for a high-reliability, flip-chip integrated GaInAs/InP PIN photodiode/GaAs amplifier receiver circuit. We also discuss requirements for metallization for future monolithic OEIC's by taking up an example of metal-semiconductor-metal photodiodes in InP-based systems.

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