Design and Fabrication of Vertical Metal/TiO2/β-Ga2O3 Dielectric Heterojunction Diode With Reverse Blocking Voltage of 1010 V

2020 ◽  
Vol 67 (12) ◽  
pp. 5628-5632
Author(s):  
Zhuangzhuang Hu ◽  
Jianguo Li ◽  
Chunyong Zhao ◽  
Zhaoqing Feng ◽  
Xusheng Tian ◽  
...  
Keyword(s):  
Heterojunction Diode ◽  
Blocking Voltage ◽  
Reverse Blocking

5.5 kV Bipolar Diodes From High Quality CVD 411-SiC

1998 ◽  
Vol 512 ◽  
Author(s):  
K. G. Irvine ◽  
R. Singh ◽  
M. J. Paisley ◽  
J. W. Palmour ◽  
O. Kordina ◽  
...  
Keyword(s):  
Thick Film ◽  
High Power ◽  
Growth Process ◽  
Carrier Lifetime ◽  
Voltage Drop ◽  
Power Devices ◽  
High Quality ◽  
Thickness Uniformity ◽  
Blocking Voltage ◽  
Reverse Blocking

ABSTRACTThick, high quality 4H-SiC material suitable for high power devices has been grown in a hot-wall reactor. Recent improvements to the growth process have improved our thickness uniformity over a 50mm wafer to less than 1% and the doping uniformity to less than 5%, both values expressed as σ/mean.A record breaking reverse blocking voltage of 5.5 kV was obtained on P-i-N diodes fabricated from a 85μm thick film. The on-state voltage drop was 5.4 V at 100 A/cm2. From this on-state voltage drop, the carrier lifetime was estimated in excess of 1μs.

Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage

2020 ◽  
Vol 41 (3) ◽  
pp. 441-444 ◽  
Author(s):  
Zhuangzhuang Hu ◽  
Yuanjie Lv ◽  
Chunyong Zhao ◽  
Qian Feng ◽  
Zhaoqing Feng ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Turn On ◽  
Blocking Voltage ◽  
Reverse Blocking

New High-Voltage Unipolar Mode p+ Si/n– 4H-SiC Heterojunction Diode

2005 ◽  
Vol 483-485 ◽  
pp. 953-956 ◽  
Author(s):  
Tetsuya Hayashi ◽  
Hideaki Tanaka ◽  
Yoshio Shimoida ◽  
Satoshi Tanimoto ◽  
Masakatsu Hoshi
Keyword(s):  
Leakage Current ◽  
High Voltage ◽  
Drift Region ◽  
Heterojunction Diode ◽  
Inductive Load ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Blocking Voltage ◽  
Switching Characteristics ◽  
P Type

We demonstrate a new high-voltage p+ Si/n- 4H-SiC heterojunction diode (HJD) by numerical simulation and experimental results. This HJD is expected to display good reverse recovery because of unipolar action similar to that of a SiC Schottky barrier diode (SBD) when forward biased. The blocking voltage of the HJD is almost equal to the ideal level in the drift region of n- 4H-SiC. In addition, the HJD has the potential for a lower reverse leakage current compared with the SBD. A HJD was fabricated with p+-type polycrystalline silicon on an n--type epitaxial layer of 4H-SiC. Measured reverse blocking voltage was 1600 V with low leakage current. Switching characteristics of the fabricated HJD showed nearly zero reverse recovery with an inductive load circuit.

scholarly journals Optimization of Schottky-contact process on 4H-SiC Junction Barrier Schottky (JBS) Diodes

2021 ◽  
Vol 2083 (2) ◽  
pp. 022090
Author(s):  
Qingling Li ◽  
Tao Zhu ◽  
Jialing Li ◽  
Hailiang Yan
Keyword(s):  
Schottky Barrier ◽  
Voltage Drop ◽  
Negative Impact ◽  
Contact Process ◽  
Schottky Contact ◽  
Curve Tracer ◽  
Blocking Voltage ◽  
Schottky Barrier Junction ◽  
Reverse Blocking ◽  
Schottky Rectifier

Abstract SiC Junction Barrier Schottky (JBS) Rectifier is a kind of unipolar power diode with low threshold voltage and high reverse blocking voltage. And the Schottky barrier Φ BN is a main technology parameter, which could greatly affect the forward conduction power and reverse leakage current in the JBS rectifiers. Therefore, it is necessary to balance the influence of Φ BN on the electrical characteristics of JBS rectifiers. In this paper, physical properties at the metal-semiconductor at the Schottky-contact could be optimized by the improvement of Schottky-contact process. And this optimization could significantly decrease Φ BN to reduce the on-state voltage drop V F and minimize negative impact on its reverse characteristics. After the completion of Silicon carbide JBS diodes, the static parameter electrical test was carried out on the wafer by using Keysight B1505A Power Device Analyzer/Curve Tracer. The test results show that the Schottky barrier height Φ BN of JBS Schottky rectifier manufactured by the modified Schottky foundation technology decreased from 1.19eV to 0.99eV and I R increased from 1.08μA to 3.73μA (reverse blocking voltage V R=1200V). It indicated that the power consumption of Schottky barrier junction in JBS rectifiers could be significantly reduced by about 25%, and I R could effectively be limited to less than 10μA.

scholarly journals Hybrid Voltage Regulator for Automobiles

1981 ◽  
Vol 8 (3-4) ◽  
pp. 229-233
Author(s):  
Akihiro Sawamura ◽  
Tadashi Takahashi ◽  
Sei-Ichi Denda
Keyword(s):  
Thick Film ◽  
Temperature Cycling ◽  
Voltage Regulators ◽  
Voltage Regulator ◽  
Reverse Voltage ◽  
Pattern Design ◽  
Blocking Voltage ◽  
Reverse Blocking ◽  
Automobile Use ◽  
Surge Current

In the course of the development of hybrid voltage regulators for automobile use, increasing the reverse blocking voltage with decreasing of saturation voltage for output power darlington transistors, the capability of monolithic IC chip against surge pulses generated in cars, and an improvement of the pattern design of thick film in order to withstand temperature cycling, have been important subjects. Power darlingtons have more than 150 V of reverse voltage as well as large secondary breakdown capacity and less than 1.2 V of saturation voltage. A monolithic chip having small saturation voltage and more than 500 mA of surge current capability, has been developed. A neck-shaped thick film pattern was developed to make soldering in a controlled manner. The problems in the earlier stage with surge current and temperature cycling have been almost solved by these improvements.In this paper the characteristics of the transistor and the monolithic chip the structure of the device and related problems observed in temperature cycling are described.

Au-Free $Al_{0.4}Ga_{0.6}N/Al_{0.1}Ga_{0.9}N$ HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV

2021 ◽  
pp. 1-7
Author(s):  
Yinhe Wu ◽  
Weihang Zhang ◽  
Jincheng Zhang ◽  
Shenglei Zhao ◽  
Jun Luo ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Blocking Voltage ◽  
Reverse Blocking

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

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