scholarly journals Material Sputtering with a Multi-Ion Species Plasma Focused Ion Beam

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Valerie Brogden ◽  
Cameron Johnson ◽  
Chad Rue ◽  
Jeremy Graham ◽  
Kurt Langworthy ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Cross Sectional ◽  
Systematic Exploration ◽  
Community Effort ◽  
Beam Currents ◽  
New Applications ◽  
Ion Species

Focused ion beams are an essential tool for cross-sectional material analysis at the microscale, preparing TEM samples, and much more. New plasma ion sources allow for higher beam currents and options to use unconventional ion species, resulting in increased versatility over a broader range of substrate materials. In this paper, we present the results of a four-material study from five different ion species at varying beam energies. This, of course, is a small sampling of the enormous variety of potential specimen and ion species combinations. We show that milling rates and texturing artifacts are quite varied. Therefore, there is a need for a systematic exploration of how different ion species mill different materials. There is so much to be done that it should be a community effort. Here, we present a publicly available automation script used to both measure sputter rates and characterize texturing artifacts as well as a collaborative database to which anyone may contribute. We also put forth some ideas for new applications of focused ion beams with novel ion species.

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

Maskless Etching of SiO2 by Ion Beam Assisted Etching Technique

1987 ◽  
Vol 101 ◽  
Author(s):  
Zheng Xu ◽  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Energy Deposition ◽  
Ion Beam ◽  
Etching Rate ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Etching Technique ◽  
Physical Sputtering ◽  
H2 Addition ◽  
Ion Species ◽  
Energy Deposition Rate

ABSTRACTCharacteristics of ion beam assisted etching (IBAE) for SiO2 have been investigated to reveal'a possibility for maskless etching using focused ion beams. The ion beam assisted etching was done by bombarding 50 keV unfocused ion beams in XeF2 atmosphere and effect of various etching parameter on etching characteristics have been investigated. These are the effects of XeF2 gas pressure, bombarding ion species, bombarding angle and H2 addition, etc. Significant enhancements up to 100 times larger than physical sputtering were achieved. The selectivity of SiO2 to Si could be tailored to specific requirements from 0.1 to 6 by changing the gas mixing ratio. The etching rate was approximately proportional to the energy deposition rate bombarded by ion beam on surface. Carbon contamination on surface after etching were improved by the introduction of XeF2 gas.

Application of Focused Ion Beam to Atom Probe Tomography Specimen Preparation from Mechanically Alloyed Powders

2007 ◽  
Vol 13 (5) ◽  
pp. 347-353 ◽  
Author(s):  
Pyuck-Pa Choi ◽  
Tala'at Al-Kassab ◽  
Young-Soon Kwon ◽  
Ji-Soon Kim ◽  
Reiner Kirchheim
Keyword(s):  
Atom Probe Tomography ◽  
Structural Changes ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
High Energy ◽  
Specimen Preparation ◽  
Mechanically Alloyed ◽  
Cross Sectional ◽  
Beam Currents

Focused ion-beam milling has been applied to prepare needle-shaped atom probe tomography specimens from mechanically alloyed powders without the use of embedding media. The lift-out technique known from transmission electron microscopy specimen preparation was modified to cut micron-sized square cross-sectional blanks out of single powder particles. A sequence of rectangular cuts and annular milling showed the highest efficiency for sharpening the blanks to tips. First atom probe results on a Fe95Cu5 powder mechanically alloyed in a high-energy planetary ball mill for 20 h have been obtained. Concentration profiles taken from this powder sample showed that the Cu distribution is inhomogeneous on a nanoscale and that the mechanical alloying process has not been completed yet. In addition, small clusters of oxygen, stemming from the ball milling process, have been detected. Annular milling with 30 keV Ga ions and beam currents ≥50 pA was found to cause the formation of an amorphous surface layer, whereas no structural changes could be observed for beam currents ≤10 pA.

Applications of Focused Ion Beams to Optoelectronic Device Fabrication - An Overview

1988 ◽  
Vol 126 ◽  
Author(s):  
Randall L. Kubena
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Optoelectronic Device ◽  
Ion Beams ◽  
Device Fabrication ◽  
Focused Ion Beams ◽  
The Past ◽  
Device Structures ◽  
Circuit Fabrication ◽  
Major Application

ABSTRACTFocused-ion-beam (FIB) technology has been applied during the past decade to a wide variety of device and circuit fabrication procedures. The ability to perform maskless implantation, selective sputtering and deposition, and high resolution lithography with a single system has allowed FIB researchers to explore a large number of unique fabrication processes for silicon, GaAs, and heterojunction devices. Currently, exploratory studies in advanced optoelectronic device fabrication employ the largest number of diverse FIB techniques. In this paper, the major application areas of FIB technology to optoelectronic research are reviewed, and possible uses of ultrasmall (≤500 Å) ion beams in the fabrication of optoelectronic device structures with novel properties are described.

Electron and Focused Ion Beams in Thermal Science and Engineering

2008 ◽  
Author(s):  
Tae-Youl Choi ◽  
Dimos Poulikakos
Keyword(s):  
Electron Beam ◽  
Heavy Ions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Deposition Method ◽  
Science And Engineering ◽  
Nanoscale Structures

Focused-ion-beam (FIB) is a useful tool for defining nanoscale structures. High energy heavy ions inherently exhibit destructive nature. A less destructive tool has been devised by using electron beam. FIB is mainly considered as an etching tool, while electron beam can be used for deposition purpose. In this paper, both etching and deposition method are demonstrated for applications in thermal science. Thermal conductivity of nanostructures (such as carbon nanotubes) was measured by using the FIB (and electron beam) nanolithography technique. Boiling characteristics was studied in a submicron heater that could be fabricated by using FIB.

scholarly journals Focused Ion Beams. Thin Film Growth by Low Energy Focused Ion Beam.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (12) ◽  
pp. 724-728
Author(s):  
Shinji NAGAMACHI ◽  
Masahiro UEDA ◽  
Junzo ISHIKAWA
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Thin Film Growth ◽  
Focused Ion Beams

Redeposition Effects During the FIB Milling of Silicon

2001 ◽  
Vol 7 (S2) ◽  
pp. 956-957
Author(s):  
S. Rubanov ◽  
P.R. Munroe
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Target Material ◽  
Ion Source ◽  
Cross Sectional ◽  
Damage Layer ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Milled Material ◽  
Beam Currents

The technique for the preparation of specimens for transmission electron microscopy (TEM) using the focused ion beam (FIB) miller typically consists of a series of milling steps performed over both sides of an area of interest until an electron transparent membrane is achieved [1]. This process is often accompanied by the formation of damage layers on the surfaces of the specimen. The origins of any damage layer are still not clear. On one hand the process of amorphisation of the target material by the highly energetic ion beam is well known. Alternatively, other workers have reported that this damage layer can be connected with redeposition of milled material. [2,3]. in this paper we have studied redeposition effects during FIB milling of silicon TEM specimens.A FEI xP200 FIB system with a Ga+ ion source operating at 30 kV was used in this work. to study redeposition effects a row of trenches on a silicon specimen was milled under different beam currents ranging from 1000 to 6600 pA. The size of such trenches was 15x10 μm wide and 1 μm deep. The specimen was then removed from the FIB and sputter coated with a ∼50-100 nm thick Au film to preserve the trench surfaces from further damage during subsequent milling. The specimen was then placed back in the FIB system and a second set of trenches 5×8 μm wide and 0.6 μm deep was milled on the bottom of first set of trenches (Fig. 1a). The specimens were sputter coated with Au again and were placed back in the FIB system and the trenches were then covered with 1 μ thick Pt strips using the metal deposition facility of the FIB. The presence of these protection layers (Au and Pt) ensures that the final TEM specimen have unmodified original damage layers resulting from the initial milling steps. Cross-sectional TEM specimens of the trench walls were then prepared using normal FIB procedures (Fig. 1b) [2].

scholarly journals Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

2020 ◽  
Vol 11 ◽  
pp. 1742-1749
Author(s):  
Nico Klingner ◽  
Gregor Hlawacek ◽  
Paul Mazarov ◽  
Wolfgang Pilz ◽  
Fabian Meyer ◽  
...  
Keyword(s):  
Liquid Metal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Ion Source ◽  
Metal Alloy ◽  
Gas Field ◽  
Helium Ion ◽  
Liquid Metal Alloy ◽  
Ion Species

While the application of focused ion beam (FIB) techniques has become a well-established technique in research and development for patterning and prototyping on the nanometer scale, there is still a large underused potential with respect to the usage of ion species other than gallium. Light ions in the range of m = 1–28 u (hydrogen to silicon) are of increasing interest due to the available high beam resolution in the nanometer range and their special chemical and physical behavior in the substrate. In this work, helium and neon ion beams from a helium ion microscope are compared with ion beams such as lithium, beryllium, boron, and silicon, obtained from a mass-separated FIB using a liquid metal alloy ion source (LMAIS) with respect to the imaging and milling resolution, as well as the current stability. Simulations were carried out to investigate whether the experimentally smallest ion-milled trenches are limited by the size of the collision cascade. While He+ offers, experimentally and in simulations, the smallest minimum trench width, light ion species such as Li+ or Be+ from a LMAIS offer higher milling rates and ion currents while outperforming the milling resolution of Ne+ from a gas field ion source. The comparison allows one to select the best possible ion species for the specific demands in terms of resolution, beam current, and volume to be drilled.

The Effect of Implanted Gallium on the Recrystallization of Amorphous Layers formed during FIB Milling of Silicon

2001 ◽  
Vol 7 (S2) ◽  
pp. 958-959
Author(s):  
S. Rubanov ◽  
P.R. Munroe
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Amorphous Layer ◽  
High Energy ◽  
Specimen Preparation ◽  
Silicon Sample ◽  
Cross Sectional ◽  
Wide Range ◽  
Average Size ◽  
Beam Currents

The focused ion beam (FIB) miller allows preparation of site-specific transmission electron microscopy (TEM) specimens from a wide range of materials in both cross-sectional and planar configurations [1,2]. However, radiation damage during exposure to the high-energy gallium beam may result in the formation of amorphous regions on thin film specimens. The thickness of such damage layers, on both sides of a TEM specimen, is comparable with the thickness required for lattice imaging. For example, the thickness of an amorphous layer in Si after 30 kV Ga+ FIB processing has been reported in the range from 15 [3] to 28 nm [4]. This problem limits the capabilities of FIB sample fabrication.The aim of this study was to investigate, in detail, the structure, composition and the thickness of the damage layers in Si specimens after milling with a gallium ion beam. Using a FEI xP200 FIB system, with 30 kV Ga+ ions, a row of trenches on a silicon sample was milled under different beam currents ranging from 150 to 6600 pA. The average size of such trenches was 15×10 μm wide and 1 μm deep. The trenches were then removed from the FIB and sputter coated with a thick Au film to preserve the trench surfaces from further damage during subsequent TEM specimen preparation steps. Cross-sectional TEM specimens of the trench walls were then prepared using standard FIB procedures [5]. Observations were made using a Philips CM 200 Field Emission Gun TEM operating at an accelerating voltage of 200 kV.

scholarly journals Focused Ion Beams. Present Status of Focused Ion Beam.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (12) ◽  
pp. 729-734
Author(s):  
Masanori KOMURO
Keyword(s):  
Present Status ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams
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