Electron and Focused Ion Beams in Thermal Science and Engineering

2008 ◽  
Author(s):  
Tae-Youl Choi ◽  
Dimos Poulikakos
Keyword(s):  
Electron Beam ◽  
Heavy Ions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Deposition Method ◽  
Science And Engineering ◽  
Nanoscale Structures

Focused-ion-beam (FIB) is a useful tool for defining nanoscale structures. High energy heavy ions inherently exhibit destructive nature. A less destructive tool has been devised by using electron beam. FIB is mainly considered as an etching tool, while electron beam can be used for deposition purpose. In this paper, both etching and deposition method are demonstrated for applications in thermal science. Thermal conductivity of nanostructures (such as carbon nanotubes) was measured by using the FIB (and electron beam) nanolithography technique. Boiling characteristics was studied in a submicron heater that could be fabricated by using FIB.

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

Applications of Focused Ion Beams to Optoelectronic Device Fabrication - An Overview

1988 ◽  
Vol 126 ◽  
Author(s):  
Randall L. Kubena
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Optoelectronic Device ◽  
Ion Beams ◽  
Device Fabrication ◽  
Focused Ion Beams ◽  
The Past ◽  
Device Structures ◽  
Circuit Fabrication ◽  
Major Application

ABSTRACTFocused-ion-beam (FIB) technology has been applied during the past decade to a wide variety of device and circuit fabrication procedures. The ability to perform maskless implantation, selective sputtering and deposition, and high resolution lithography with a single system has allowed FIB researchers to explore a large number of unique fabrication processes for silicon, GaAs, and heterojunction devices. Currently, exploratory studies in advanced optoelectronic device fabrication employ the largest number of diverse FIB techniques. In this paper, the major application areas of FIB technology to optoelectronic research are reviewed, and possible uses of ultrasmall (≤500 Å) ion beams in the fabrication of optoelectronic device structures with novel properties are described.

scholarly journals Focused Ion Beams. Thin Film Growth by Low Energy Focused Ion Beam.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (12) ◽  
pp. 724-728
Author(s):  
Shinji NAGAMACHI ◽  
Masahiro UEDA ◽  
Junzo ISHIKAWA
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Thin Film Growth ◽  
Focused Ion Beams

scholarly journals Toward Next Generation Plasmonic Nanopore Slit Platform with a ~10 nm Slit-Width

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Seong Soo Choi ◽  
◽  
Byung Seong Bae ◽  
Kyoung Jin Kim ◽  
Myoug Jin Park ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Molecule ◽  
Focused Ion Beam ◽  
Thermal Emission ◽  
Ion Beam ◽  
High Energy ◽  
Infrared Emission ◽  
Au Nanoparticle ◽  
Beam Current Density ◽  
Electron Beam Current

We fabricated various nanoaperture plasmonic platforms for single-molecule detection. We fabricated nanoapertures like nanopores on a pyramid and nanoslits on an Au flat membrane using a Ga ion focused ion beam drilling technique, followed by irradiating with a high energy electron beam, dependent on the electron beam current density to obtain nanoapertures with a few nanometer sizes (circular nanopore, nanoslit pores). We examined their optical characteristics with varying aperture sizes and sample thicknesses. We obtained broad emission spectra in the visible and infrared region from the (7 x 7) slit array and a sharp, strong infrared emission peak from the Au nanoparticle on the substrate. The fabricated Au platform with ~10 nm nanometer opening can be employed as a single-molecule sensor and an infrared thermal emission device.

Fabrication of Carbon Nanotube Probes in Atomic Force Microscopy

2009 ◽  
Vol 76-78 ◽  
pp. 497-501 ◽  
Author(s):  
Zong Wei Xu ◽  
Feng Zhou Fang ◽  
Xiao Tang Hu
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Carbon Nanotube ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Milling Process ◽  
Deposition Method ◽  
Bonding Force ◽  
Force Microscopy ◽  
Atomic Force

Carbon nanotube (CNT) probe used in atomic force microscopy (AFM) was fabricated by using electron beam induced Pt deposition method. The bonding force for CNT probe was found to be larger than 500nN. The nanotube probe’s length was shortened by focused ion beam milling process. It is confirmed that the CNT probe shows higher aspect ratio than the Si probe. The nanotube probes with fullerene-like cap end present higher imaging resolution than those with open end.

scholarly journals Material Sputtering with a Multi-Ion Species Plasma Focused Ion Beam

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Valerie Brogden ◽  
Cameron Johnson ◽  
Chad Rue ◽  
Jeremy Graham ◽  
Kurt Langworthy ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Cross Sectional ◽  
Systematic Exploration ◽  
Community Effort ◽  
Beam Currents ◽  
New Applications ◽  
Ion Species

Focused ion beams are an essential tool for cross-sectional material analysis at the microscale, preparing TEM samples, and much more. New plasma ion sources allow for higher beam currents and options to use unconventional ion species, resulting in increased versatility over a broader range of substrate materials. In this paper, we present the results of a four-material study from five different ion species at varying beam energies. This, of course, is a small sampling of the enormous variety of potential specimen and ion species combinations. We show that milling rates and texturing artifacts are quite varied. Therefore, there is a need for a systematic exploration of how different ion species mill different materials. There is so much to be done that it should be a community effort. Here, we present a publicly available automation script used to both measure sputter rates and characterize texturing artifacts as well as a collaborative database to which anyone may contribute. We also put forth some ideas for new applications of focused ion beams with novel ion species.

Electron Microscopy, Electrical Activity, Artefacts and the Assessment of Semiconductor Epitaxial Growth

1998 ◽  
Vol 523 ◽  
Author(s):  
Paul D. Brown ◽  
Colin J. Humphreys
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Electronic Materials ◽  
Ion Beam ◽  
Thin Foil ◽  
High Energy ◽  
Surface Relaxation ◽  
Misfit Dislocations ◽  
Ion Milling

AbstractThe characterisation of semiconductor thin films and device structures increasingly requires the use of a variety of complementary electron microscope-based techniques as feature sizes decrease. We illustrate how layer electrical and structural properties can be correlated: firstly averaged over the bulk and then on the individual defect scale, e.g. scanning transmission electron beam induced conductivity can be used to image the recombination activity of orthogonal <110> misfit dislocations within relaxed MBE grown Si/Si1-xGex/Si(001) heterostructures on the sub-micrometre scale. There is also need for improved understanding of sample preparation procedures and imaging conditions such that materials issues relevant to ULSI development can be addressed without hindrance from artefact structures. Hence, we consider how point defects interact under the imaging electron beam and the relative merits of argon ion milling, reactive ion beam etching, focused ion beam milling and plasma cleaning when used for TEM sample preparation. Advances in sample preparation procedures must also respect inherent problems such as thin foil surface relaxation effects, e.g. cleaved wedge geometries are more appropriate than conventional cross-sections for the quantitative characterisation of δ-doped layers. Choice of the right imaging technique for the problem to be addressed is illustrated through consideration of polySi/Si emitter interfaces within bipolar transistor structures. The development of microscopies for the rapid analysis of electronic materials requires wider consideration of non-destructive techniques of assessment, e.g. reflection high energy electron diffraction in a modified TEM is briefly described.

scholarly journals Focused Ion Beams. Present Status of Focused Ion Beam.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (12) ◽  
pp. 729-734
Author(s):  
Masanori KOMURO
Keyword(s):  
Present Status ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams

scholarly journals Focused Ion Beams. On the Preparation of TEM Specimens using Focused Ion Beam.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (12) ◽  
pp. 755-760
Author(s):  
Masayoshi TARUTANI ◽  
Yoshiyuki KAIHARA ◽  
Yoshizo TAKAI ◽  
Ryuichi SHIMIZU
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams

scholarly journals Intense heavy ion beams as a pumping source for short wavelength lasers

2009 ◽  
Vol 27 (3) ◽  
pp. 379-391 ◽  
Author(s):  
A. Adonin ◽  
V. Turtikov ◽  
A. Ulrich ◽  
J. Jacoby ◽  
D.H.H. Hoffmann ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Short Wavelength ◽  
Heavy Ions ◽  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
Ion Beams ◽  
Beam Intensity ◽  
Gas Laser ◽  
Uranium Beam

AbstractThe high energy loss of heavy ions in matter as well as the small angular scattering makes heavy ion beams an excellent tool to produce almost cylindrical and homogeneously excited volumes in matter. This aspect can be used to pump short wavelength lasers. For the first time, a beam of heavy ions was used to pump a short wavelength gas laser in an experiment performed at the GSI ion accelerator facility in December 2005. In this experiment, the well-known KrF* excimer laser was pumped with an intense uranium beam. Pulses of an uranium beam compressed down to 110 ns (full width at half maximum) with initial particle energy of 250 MeV per nucleon were stopped inside a gas laser cell. A mixture of an excimer laser premix gas (95.5%Kr + 0.5%F2) and a buffer gas (Ar) in different proportions was used as the laser gas. The maximum beam intensity reached in the experiment was 2.5 × 109particles per pulse, which resulted in 34 J/g specific energy deposited in the laser gas. The laser effect on the transition at λ = 248 nm has been successfully demonstrated by various independent methods. There, the laser threshold was reached with a beam intensity of 1.2 × 109particles per pulse, and the energy of the laser pulse of about 2 mJ was measured for an ion beam intensity of 2 × 109particles per pulse. As a next step, it is planned to reduce the laser wavelength down to the vacuum ultraviolet spectral region, and to proceed to the excimer lasers of the pure rare gases. The perspectives for such experiments are discussed and the detailed estimations for Xe and Kr cases are given. We believe that the use of heavy ion beams as a pumping source may lead to new pumping schemes on the higher lying level transitions and considerably shorter wavelengths, which rely on the high cross sections for multiple ionization of the target species.

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