scholarly journals Simulation of the Conductive Process of Nano ZnO Varistors Based on Animation Plane Form

2020 ◽  
Vol 2020 ◽  
pp. 1-9
Author(s):  
Xin Liu

Among many nano materials and chemical materials, zinc oxide nanomaterials have attracted researchers’ interest because of their high efficiency, low cost, easy preparation, and variable morphology. The purpose of this study is to explore the fabrication and conductive process of nano ZnO varistors under the simulation of an animation plane form. In this study, the chemical vapor deposition method was used to prepare nano ZnO. Then, ZnO nanomaterials were mixed with deionized water to form a suspension. Under the action of a micromechanical stirrer, impurities were removed by heat treatment, and then different amount of water was added to obtain a nano ZnO electrode. The conductive process and electrochemical properties of the nano ZnO electrode were investigated and analyzed. The results show that the pressure ratio of the varistor increases obviously after adding nano ZnO. In the range of 0–30%, the pressure ratio of the ZnO varistor increases with the increase in nano ZnO content. When w (nano ZnO) is 30%, the voltage ratio reaches 1.149 and the oxidation peak current ratio of LD decreases by 6%. Therefore, it is concluded that the electrode of nano ZnO varistor valve sheets maintains good stability for a LD conductivity detection process. It also plays an important role in electrochemical research.

1999 ◽  
Vol 593 ◽  
Author(s):  
M. Lindstam ◽  
M. Boman ◽  
K. Piglmayer

ABSTRACTA novel approach to deposit amorphous carbon from the precursor CH2I2 at low cost and high efficiency is reported. The combination of thermal and quantum photo effects shows new interesting growth behaviour. The radiation of a halogen-lamp was used to heat the substrate material and to split photolytically the precursor molecules above the substrate surface. The deposition process was investigated as a function of lamp power, gas phase partial pressures and substrate materials. The films were analysed by Raman spectroscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray photon spectroscopy, transmission electron microscopy and atomic force microscopy.


2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Teng-Hsiang Chang ◽  
Chiao Chang ◽  
Yen-Ho Chu ◽  
Chien-Chieh Lee ◽  
Jenq-Yang Chang ◽  
...  

This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.


2016 ◽  
Vol 2016 ◽  
pp. 1-5 ◽  
Author(s):  
Wei-Cheng Kuo ◽  
Hung-Chi Hsieh ◽  
Wu Chih-Hung ◽  
Huang Wen-Hsiang ◽  
Chien-Chieh Lee ◽  
...  

We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low growth temperature (180°C). The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD) and spectroscopy ellipsometry (SE). The full width at half maximum (FWHM) of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM) to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells.


2012 ◽  
Vol 220-223 ◽  
pp. 580-584
Author(s):  
Wei Ya Ding ◽  
Xue Wu Hu ◽  
Xiao Ming Sheng

The double-acting air-oil intensifier designed in this paper can continuously output high pressure oil which meets the requirements of equipment that is high-pressure and with recirculation motion and it is driven by pneumatic substituting the independent hydraulic power source driven by electric motor. It consists of twin roller piston air cylinder, force amplifier, hydraulic cylinder and oil supercharger. The piston of air cylinder propelled by pressure gas makes cyclic motion and the driving force of piston increased by force amplifier pushes the piston of hydraulic cylinder and forces out hydraulic oil, then oil is input to the system after the second time when pressure amplification by oil superchargers. It has many advantages such as higher pressure ratio, compact structure, high efficiency, low cost and easy access to regulate pressure and flow rate.


2018 ◽  
Vol 765 ◽  
pp. 193-198 ◽  
Author(s):  
Taha A. Tabaza ◽  
Omar T. Tabaza ◽  
Amjad Al-Sakarneh

Metal coating nowadays is very essential in heavy industry and many other applications, however, a coating system is designed and built to obtain pyrolytic Chrome-Oxide Cr2O3, so oxygen is distributed through the coating in order to enhance its properties depending on metal-organic compounds (MOC). A very large number of experiments have been performed to study the effect of oxidant comparing with inert atmosphere. A chemical vapor deposition method for preparing chromium oxide Cr2O3 coatings from bis-arene chromium compounds has been performed, followed by studying the effect of oxidant substances concentration on the kinetics of growth of coatings. The main finding is that coatings exhibit excellent adhesion, high microhardness, and wear resistance. The coating process is characterized by high adaptability and relatively low cost.


2013 ◽  
Vol 678 ◽  
pp. 198-202
Author(s):  
R. Ravindra ◽  
Badekai Ramachandra Bhat

Mass production of carbon nanofibers (CNFs) on a water soluble support has been achieved by chemical vapor deposition method. Carbon nanofibers have been synthesized using metal (Ni, Co, Fe) acetate as catalyst precursors at 680°C. Upon pyrolysis this catalyst yields metal nanoparticles directly. The sodium chloride was used as catalyst support, it was chosen because of its non toxic and water soluble nature. The problems such as detrimental effect, environment and even cost has been avoided by using water soluble support. The structure of the products was characterized by scanning electron microscopy, transmission electron microscopy, Raman spectroscopy and X-ray diffraction method. The purity of as grown products and purified products was determined by thermal analysis. The yield of CNFs was up to 7500 wt% relative to the nickel catalyst have been achieved in the growth time of 15 mins. The advantage of this synthesis technique is the simplicity and use of easily available low cost precursors.


2021 ◽  
Vol 891 ◽  
pp. 99-104
Author(s):  
Yosuke Ito ◽  
Dang Trang Nguyen ◽  
Kozo Taguchi

Thin films made of carbon nanotubes are called buckypaper (BP), which is expected to be applied to electronic devices. Usually, BP is made by the chemical vapor deposition method. In this study, we used the vacuum filtration method to make low-cost BP. To justify the outstanding electronic performance of the fabricated BP, it was utilized to make the air-cathode of the aluminum-air battery. Since the BP is lighter and has a larger specific surface area than the carbon sheet, the aluminum-air battery can be miniaturized while increasing its performance. Furthermore, UV-ozone treatment was also applied to further improve the performance of the BP because it is able to clean and improve the surface conditions.


Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3304 ◽  
Author(s):  
Xia Liu ◽  
Lianzhen Cao ◽  
Zhen Guo ◽  
Yingde Li ◽  
Weibo Gao ◽  
...  

Perovskite photovoltaic materials (PPMs) have emerged as one of superstar object for applications in photovoltaics due to their excellent properties—such as band-gap tunability, high carrier mobility, high optical gain, astrong nonlinear response—as well as simplicity of their integration with other types of optical and electronic structures. Meanwhile, PPMS and their constructed devices still present many challenges, such as stability, repeatability, and large area fabrication methods and so on. The key issue is: how can PPMs be prepared using an effective way which most of the readers care about. Chemical vapor deposition (CVD) technology with high efficiency, controllability, and repeatability has been regarded as a cost-effective road for fabricating high quality perovskites. This paper provides an overview of the recent progress in the synthesis and application of various PPMs via the CVD method. We mainly summarize the influence of different CVD technologies and important experimental parameters (temperature, pressure, growth environment, etc.) on the stabilization, structural design, and performance optimization of PPMS and devices. Furthermore, current challenges in the synthesis and application of PPMS using the CVD method are highlighted with suggested areas for future research.


2009 ◽  
Vol 1153 ◽  
Author(s):  
Katherine L. Saenger ◽  
Joel P. de Souza ◽  
Daniel Inns ◽  
Keith E. Fogel ◽  
Devendra K. Sadana

AbstractDemand for high efficiency, low-cost solar cells has led to strong interest in post-deposition processing techniques that can improve the crystallinity of thick (1 to 40 μm) silicon films deposited at high growth rates. Here we describe a high temperature grain reorientation annealing process that enables the conversion of polycrystalline silicon (poly-Si) into a single crystal material having the orientation of an underlying single crystal Si seed layer. Poly-Si films of thickness 0.5 to 1.0 μm were deposited by low pressure chemical vapor deposition (LPCVD) on substrates comprising a surface thermal oxide or a 100-oriented single crystal silicon-on-insulator (SOI) layer. After annealing at 1300 °C for 1 hour, poly-Si on oxide shows very significant grain growth, as expected. In contrast, the poly-Si deposited on SOI showed no grain boundaries after annealing, transforming into a single crystal material with a fairly high density of stacking faults. Possible uses and drawbacks of this approach for solar cell applications will be discussed.


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