scholarly journals High Reliability and Fast-Speed Phase-Change Memory Based on Sb70Se30/SiO2 Multilayer Thin Films

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
Dan Zhang ◽  
Yifeng Hu ◽  
Haipeng You ◽  
Xiaoqin Zhu ◽  
Yuemei Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Phase Change ◽  
Crystallization Temperature ◽  
High Reliability ◽  
Rf Magnetron Sputtering ◽  
Multilayer Thin Films ◽  
Multilayer Composite ◽  
Data Retention ◽  
Composite Thin Films

Sb70Se30/SiO2 multilayer thin films were applied to improve the thermal stability by RF magnetron sputtering on SiO2/Si (100) substrates. The characteristics of Sb70Se30/SiO2 multilayer thin films were investigated in terms of crystallization temperature, ten years of data retention, and energy bandgap. It is observed that the crystallization temperature, 10-year data retention, and resistance of Sb70Se30/SiO2 multilayer composite thin films exhibited a higher value, suggesting that Sb70Se30/SiO2 multilayer composite thin films have superior thermal stability. The AFM measurement suggests that the SbSe (1 nm)/SiO (9 nm) multilayer thin films possess a smaller surface roughness (RMS = 0.23 nm). Besides, it was found that the phase-change time of SbSe (1 nm)/SiO (9 nm) multilayer thin films was shorter than that of GST in the process of crystallization and amorphization.

Crystallization behaviors of ZnxSb100−x thin films for ultralong data retention phase change memory applications

CrystEngComm ◽  
2014 ◽  
Vol 16 (5) ◽  
pp. 757-762 ◽  
Author(s):  
Yimin Chen ◽  
Guoxiang Wang ◽  
Xiang Shen ◽  
Tiefeng Xu ◽  
R. P. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Phase Change ◽  
Melting Temperature ◽  
Crystallization Temperature ◽  
Phase Change Memory ◽  
Data Retention ◽  
Memory Applications ◽  
Change Memory ◽  
Lower Melting Temperature

ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

scholarly journals POSS Nanofiller-Induced Enhancement of the Thermomechanical Properties in a Fluoroelastomer Terpolymer

Materials ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1358 ◽  
Author(s):  
Daphné Berthier ◽  
Marie-Pierre Deffarges ◽  
Nicolas Berton ◽  
Mathieu Venin ◽  
Florian Lacroix ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Thermal Stability ◽  
Critical Role ◽  
Thermomechanical Properties ◽  
Polyhedral Oligomeric Silsesquioxanes ◽  
Microscopy Imaging ◽  
Composite Thin Films ◽  
Covalent Grafting ◽  
Dispersion State

The present study reports on the use of three types of polyhedral oligomeric silsesquioxanes (POSS) nanoparticles with various organic substituents as fillers in a fluoroelastomer (FKM). A series of/POSS elastomer composite thin films is prepared. Microstructural SEM/TEM (scanning electron microscopy/transmission electron microscopy) imaging reveals a dispersion state allowing the presence of micron-sized domains. The influence of POSS content is studied in order to optimize thermal stability and mechanical properties of the composite thin films. Both POSS-A (with an acryloyl functional group and seven isobutyl substituents) and POSS-P (with eight phenyl substituents) lead to higher thermal stability and modulus of the composites, with respect to the unfilled FKM terpolymer matrix. covalent grafting of POSS-A onto the FKM network is found to play a critical role. Enhanced storage modulus in the rubbery plateau region (+210% at 200 °C for 20 phr) suggests that POSS-A is particularly suitable for high temperature applications.

scholarly journals Simultaneously high thermal stability and ultra-fast phase change speed based on samarium-doped antimony thin films

RSC Advances ◽  
2017 ◽  
Vol 7 (49) ◽  
pp. 31110-31114 ◽  
Author(s):  
Hua Zou ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Zhitang Song
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Phase Change ◽  
High Thermal Stability ◽  
Trade Off ◽  
Fast Phase ◽  
Crystallization Speed

In general, there is trade-off between the crystallization speed and the thermal stability. Here, the Sm–Sb materials simultaneously realize high thermal stability and the ultrafast phase change speed by Sm doping.

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