Crystallization behaviors of ZnxSb100−x thin films for ultralong data retention phase change memory applications

CrystEngComm ◽  
2014 ◽  
Vol 16 (5) ◽  
pp. 757-762 ◽  
Author(s):  
Yimin Chen ◽  
Guoxiang Wang ◽  
Xiang Shen ◽  
Tiefeng Xu ◽  
R. P. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Phase Change ◽  
Melting Temperature ◽  
Crystallization Temperature ◽  
Phase Change Memory ◽  
Data Retention ◽  
Memory Applications ◽  
Change Memory ◽  
Lower Melting Temperature

ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

Ti x Sb 2 Te Thin Films for Phase Change Memory Applications

2014 ◽  
Vol 31 (7) ◽  
pp. 078503
Author(s):  
Shi-Yu Tang ◽  
Run Li ◽  
Xin Ou ◽  
Han-Ni Xu ◽  
Yi-Dong Xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Preparation and characterization of GeTe4 thin films as a candidate for phase change memory applications

2011 ◽  
Vol 109 (6) ◽  
pp. 066104 ◽  
Author(s):  
Hao Jiang ◽  
Kang Guo ◽  
Hanni Xu ◽  
Yidong Xia ◽  
Kun Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Investigation of multilayer SnSb4/ZnSb thin films for phase change memory applications

2017 ◽  
Vol 10 (5) ◽  
pp. 055504 ◽  
Author(s):  
Zifang He ◽  
Shiyu Chen ◽  
Weihua Wu ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Characterizations of AgInSbTe and Its Nanocomposite Thin Films for Phase-Change Memory Applications

2010 ◽  
Vol 157 (12) ◽  
pp. P113 ◽  
Author(s):  
Yu-Jen Huang ◽  
Tzu-Chin Chung ◽  
Chiung-Hsin Wang ◽  
Tsung-Eong Hsieh
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Nanocomposite Thin Films ◽  
Memory Applications ◽  
Change Memory

SnSb4/SiO2 multilayered thin films for phase change memory applications

2016 ◽  
Vol 432 ◽  
pp. 505-509 ◽  
Author(s):  
Yi Lu ◽  
Yifeng Hu ◽  
Li Yuan ◽  
Xiaoqin Zhu ◽  
Hua Zou ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Multilayered Thin Films ◽  
Change Memory

Ultra-high speed and low-power superlattice-like Sn 18 Sb 82 –SnSe 2 thin films for phase change memory applications

2016 ◽  
Vol 163 ◽  
pp. 20-23 ◽  
Author(s):  
Ruirui Liu ◽  
Zifang He ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Ultra High Speed ◽  
Memory Applications ◽  
Change Memory

scholarly journals Samarium doped Sn15Sb85: a promising material for phase change memory applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 56000-56005 ◽  
Author(s):  
Hua Zou ◽  
Liangjun Zhai ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Haipeng You ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
Phase Change Memory ◽  
Promising Material ◽  
Memory Applications ◽  
Thermal Stability Of ◽  
Change Memory

Thermal stability of phase change films is key for phase change memory applications. Sm doped Sn15Sb85 thin films were prepared by magnetron sputtering. Compared with none doped films, the thermal stability of the film was significantly improved.

The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications

CrystEngComm ◽  
2020 ◽  
Vol 22 (30) ◽  
pp. 5002-5009
Author(s):  
Zihan Zhao ◽  
Sicong Hua ◽  
Xiao Su ◽  
Bo Shen ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Change Memory

Titanium-doped SnSb4 phase-change thin film has been experimentally investigated for phase-change random access memory (PCRAM) use.

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