scholarly journals Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Sin-Liang Ou ◽  
Feng-Min Lai ◽  
Lun-Wei Yuan ◽  
Da-Long Cheng ◽  
Kuo-Sheng Kao
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Visible Region ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Deposition Parameters ◽  
Sample Position ◽  
Doped Zno

The off-axis sputtering technique was used to deposit Al-doped ZnO (AZO) films on glass substrates at room temperature. For the illustration of the sample position in the sputtering chamber, the value ofR/ris introduced. Here,ris the radius of AZO target and R is the distance between the sample and the center of substrate holder. A systematic study for the effect of deposition parameters on structural, optical, and electrical properties of AZO films has been investigated in detail. As the sample position ofR/ris fixed at 1.8, it is found that the as-deposited AZO film has relatively low resistivity of 2.67 × 10−3 Ω-cm and high transmittance above 80% in the visible region. Additionally, after rapid thermal annealing (RTA) at 600°C with N2atmosphere, the resistivity of this AZO film can be further reduced to 1.19 × 10−3 Ω-cm. This indicates the AZO films prepared by off-axis magnetron sputtering and treated via the appropriate RTA process have great potential in optoelectronic applications.

Optical and electrical properties of transparent conducting In2O3–ZrO2 films

2000 ◽  
Vol 15 (1) ◽  
pp. 21-24 ◽  
Author(s):  
S. B. Qadri ◽  
H. Kim ◽  
H. R. Khan ◽  
A. Piqué ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Thin Films ◽  
Zirconium Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Electrical Conductivities ◽  
Electrical Resistivities

The optical transparencies and electrical conductivities of thin films of In2O3 mixed with ZrO2 have been investigated. These films were deposited on glass substrates at room temperature using pulsed-laser deposition. Indium–zirconium oxide films with a ZrO2 content up to a 15 wt% were conducting and more than 80% transparent from 450 to 700 nm. As the ZrO2 content increased from 0 to 15 wt%, the electrical resistivities increased from 1.28 × 10−3 to 6.48 × 10−2 Ω cm, the carrier densities were decreased from 2.14 × 1020 to 1.0 × 1018/cm3, and the Hall mobilities decreased from 21 to 5 cm2 V−1 s−1, all monotonically.

Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1293-1297 ◽  
Author(s):  
Yue Bo Wu ◽  
Sheng Lei ◽  
Zhe Wang ◽  
Ru Hai Zhao ◽  
Lei Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Higher Temperature ◽  
Doped Zno ◽  
Substrate Temperatures

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

Characterization of rf-sputtered HfMgZnO thin films

2012 ◽  
Vol 1432 ◽  
Author(s):  
Hantsun Chung ◽  
Jian-Zhang Chen ◽  
I-Chun Cheng
Keyword(s):  
Hafnium Oxide ◽  
Short Range ◽  
Room Temperature ◽  
Visible Region ◽  
Glass Substrates ◽  
Sputtered Films ◽  
Peak Intensity ◽  
Sputter Deposited ◽  
Deposited Films

ABSTRACTMgZnO becomes amorphous or short-range-ordered with the addition of hafnium oxide. The films are rf-sputter deposited onto glass substrates (Eagle 2000, Corning Inc.) from Mg0.05HfxZn0.95-xO targets (x=0, 0.025, 0.05, 0.075, 0.1) in pure Ar ambient at room temperature. The sputtered Mg0.05Zn0.95O exhibits strong (002) preferred orientation with XRD peak located at 2θ=34.16o. The XRD peak intensity is also greatly reduced, indicating the material amorphorization proceeds with the addition of Hf. The grain size, estimated from the full-width-at-half-maximum (FWHM) of the (002) XRD peak, decreases from 24.1 to 3.3 nm as the Hf content x increases from 0 to 0.025 in Mg0.05HfxZn0.95-xO. No sharp XRD peaks are detected in the as-sputtered films when more than 5.0 at.% Hf are added into the materials. The films remain in amorphous or short-range-ordered states after annealing at 600 oC for 30 mins. All Mg0.05HfxZn0.95-xO films (100 nm in thickness) are highly transparent (> 80 %) in the visible region from 400 to 800 nm and have sharp absorption edges in the UV region. The tauc bandgap ΔE (eV), as a function of hafnium composition x, is fitted as ΔE=3.336+6.08x for room temperature as-deposited films, and ΔE=3.302+2.60x for films after 30 min 600 oC annealing. The annealing process decreases the bandgap shift caused by the incorporation of Hf in the materials.

Room-temperature deposition of transparent conducting Al-doped ZnO films by RF magnetron sputtering method

2009 ◽  
Vol 255 (11) ◽  
pp. 5669-5673 ◽  
Author(s):  
Weifeng Yang ◽  
Zhuguang Liu ◽  
Dong-Liang Peng ◽  
Feng Zhang ◽  
Huolin Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Transparent Conducting ◽  
Temperature Deposition ◽  
Doped Zno

Elaboration and Characterization of Ca Doped ZnO Films Prepared by rf-Magnetron Sputtering at Room Temperature

2011 ◽  
Vol 9 (6) ◽  
pp. 2150-2153 ◽  
Author(s):  
H. Mahdhi ◽  
Z. Ben Ayadi ◽  
L. El Mir ◽  
K. Djessas ◽  
S. Alaya
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno

Effect of the Sputtering Presser on Structural and Optoelectrical Properties of ZnO: Ga Films Deposited on Flexible Substrates by DC Magnetron Sputtering

2012 ◽  
Vol 263-266 ◽  
pp. 90-94
Author(s):  
Xiao Li Wu ◽  
Yu Zhen Yuan ◽  
Han Fa Liu ◽  
Yun Yan Liu
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hexagonal Structure ◽  
Flexible Substrates ◽  
Dc Magnetron Sputtering ◽  
High Transparency ◽  
Transparent Conducting ◽  
Doped Zno ◽  
Sputtering Pressure ◽  
Deposited Films

Transparent conducting Ga-doped ZnO (ZnO∶Ga) thin films with high transparency and relatively low resistivity have been successfully prepared on ZnO-buffered Polyimide (PI) by DC magnetron sputtering at room temperature. Structural, morphological, stress, optical and electrical proerties of ZnO∶Ga films are investigated. Experimental results show that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis. Sputtering pressure plays an important role on the electrical resistivity of flexible ZnO∶Ga films. When sputteting pressure increases from 2 Pa to 6 Pa, the resistivity of the deposited films initially decreases and then slightly increases. At the optimum sputtering pressure of 4 Pa, the lowest resistivity of 4.3×10-4Ω•㎝ is obtained. All the filma present a high transmittance over 90％ in limit spectral range.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Tungsten-doped ZnO transparent conducting films deposited by direct current magnetron sputtering

Vacuum ◽  
2010 ◽  
Vol 85 (2) ◽  
pp. 184-186 ◽  
Author(s):  
Huafu Zhang ◽  
Hanfa Liu ◽  
Chengxin Lei ◽  
Changkun Yuan ◽  
Aiping Zhou
Keyword(s):  
Magnetron Sputtering ◽  
Direct Current ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Direct Current Magnetron Sputtering ◽  
Doped Zno
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