Elaboration and Characterization of Ca Doped ZnO Films Prepared by rf-Magnetron Sputtering at Room Temperature

2011 ◽  
Vol 9 (6) ◽  
pp. 2150-2153 ◽  
Author(s):  
H. Mahdhi ◽  
Z. Ben Ayadi ◽  
L. El Mir ◽  
K. Djessas ◽  
S. Alaya
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno

Optimization of sputtering parameters for deposition of Al-doped ZnO films by rf magnetron sputtering in Ar+H2 ambient at room temperature

2012 ◽  
Vol 520 (23) ◽  
pp. 6963-6969 ◽  
Author(s):  
B.L. Zhu ◽  
J. Wang ◽  
S.J. Zhu ◽  
J. Wu ◽  
D.W. Zeng ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno

Room-temperature deposition of transparent conducting Al-doped ZnO films by RF magnetron sputtering method

2009 ◽  
Vol 255 (11) ◽  
pp. 5669-5673 ◽  
Author(s):  
Weifeng Yang ◽  
Zhuguang Liu ◽  
Dong-Liang Peng ◽  
Feng Zhang ◽  
Huolin Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Transparent Conducting ◽  
Temperature Deposition ◽  
Doped Zno

Structural, Optical and Magnetic Properties of Co and Fe Doped ZnO Thin Films Grown by Radio Frequency Magnetron Sputtering

2006 ◽  
Vol 957 ◽  
Author(s):  
Luis Manuel Angelats ◽  
Maharaj S Tomar ◽  
Rahul Singhal ◽  
Oscar P Perez ◽  
Hector J Jimenez ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Radio Frequency Magnetron Sputtering ◽  
Optical And Magnetic Properties ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Antiferromagnetic Behavior

ABSTRACTZn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O targets were used to grow thin films by rf magnetron sputtering. XRD patterns of the films showed a strong preferred orientation along c-axis. Zn0.90Co0.10O film showed a transmittance above 75% in the visible range, while the transmittance of the Zn0.85[Co0.50Fe0.50]0.15O film was about 45%; with three absorption peaks attributed to d-d transitions of tetrahedrally coordinated Co2+. The band gap values for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films were 2.95 and 2.70 eV respectively, which are slightly less than ZnO bulk. The Zn0.90Co0.10O film showed a relatively large positive magnetoresistance (MR) at the high magnetic field in the temperature range from 7 to 50 K, which reached 11.9% a 7K for the magnetoresistance. The lowest MR was found at 100 K. From M-H curve measured at room temperature shown a probable antiferromagnetic behavior, although was possible to observe little coercive field of 30 Oe and 40 Oe for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films, respectively.

Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

2012 ◽  
Vol 560-561 ◽  
pp. 820-824
Author(s):  
Yue Zhi Zhao ◽  
Fei Xiong ◽  
Guo Mian Gao ◽  
Shi Jing Ding
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Flat Surfaces ◽  
Atomic Force ◽  
Mn Content ◽  
Doped Zno ◽  
Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

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