Room-temperature deposition of transparent conducting Al-doped ZnO films by RF magnetron sputtering method

2009 ◽  
Vol 255 (11) ◽  
pp. 5669-5673 ◽  
Author(s):  
Weifeng Yang ◽  
Zhuguang Liu ◽  
Dong-Liang Peng ◽  
Feng Zhang ◽  
Huolin Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Transparent Conducting ◽  
Temperature Deposition ◽  
Doped Zno

Optimization of sputtering parameters for deposition of Al-doped ZnO films by rf magnetron sputtering in Ar+H2 ambient at room temperature

2012 ◽  
Vol 520 (23) ◽  
pp. 6963-6969 ◽  
Author(s):  
B.L. Zhu ◽  
J. Wang ◽  
S.J. Zhu ◽  
J. Wu ◽  
D.W. Zeng ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno

scholarly journals Room temperature deposition of homogeneous, highly transparent and conductive Al-doped ZnO films by reactive high power impulse magnetron sputtering

2016 ◽  
Vol 157 ◽  
pp. 742-749 ◽  
Author(s):  
Martin Mickan ◽  
Ulf Helmersson ◽  
Hervé Rinnert ◽  
Jaafar Ghanbaja ◽  
Dominique Muller ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Room Temperature ◽  
Zno Films ◽  
Temperature Deposition ◽  
Doped Zno

Elaboration and Characterization of Ca Doped ZnO Films Prepared by rf-Magnetron Sputtering at Room Temperature

2011 ◽  
Vol 9 (6) ◽  
pp. 2150-2153 ◽  
Author(s):  
H. Mahdhi ◽  
Z. Ben Ayadi ◽  
L. El Mir ◽  
K. Djessas ◽  
S. Alaya
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno

Structural, Optical and Magnetic Properties of Co and Fe Doped ZnO Thin Films Grown by Radio Frequency Magnetron Sputtering

2006 ◽  
Vol 957 ◽  
Author(s):  
Luis Manuel Angelats ◽  
Maharaj S Tomar ◽  
Rahul Singhal ◽  
Oscar P Perez ◽  
Hector J Jimenez ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Radio Frequency Magnetron Sputtering ◽  
Optical And Magnetic Properties ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Antiferromagnetic Behavior

ABSTRACTZn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O targets were used to grow thin films by rf magnetron sputtering. XRD patterns of the films showed a strong preferred orientation along c-axis. Zn0.90Co0.10O film showed a transmittance above 75% in the visible range, while the transmittance of the Zn0.85[Co0.50Fe0.50]0.15O film was about 45%; with three absorption peaks attributed to d-d transitions of tetrahedrally coordinated Co2+. The band gap values for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films were 2.95 and 2.70 eV respectively, which are slightly less than ZnO bulk. The Zn0.90Co0.10O film showed a relatively large positive magnetoresistance (MR) at the high magnetic field in the temperature range from 7 to 50 K, which reached 11.9% a 7K for the magnetoresistance. The lowest MR was found at 100 K. From M-H curve measured at room temperature shown a probable antiferromagnetic behavior, although was possible to observe little coercive field of 30 Oe and 40 Oe for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films, respectively.

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