scholarly journals Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect

2016 ◽  
Vol 2016 ◽  
pp. 1-8
Author(s):  
X. G. Li ◽  
Z. J. Liu ◽  
X. Y. Xie ◽  
A. G. Kang ◽  
W. N. Fu
Keyword(s):  
Hall Effect ◽  
Random Access ◽  
Shape Anisotropy ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Magnetization Dynamics ◽  
Magnetic Random Access Memory ◽  
Switching Characteristics ◽  
Analytical Expressions ◽  
The Magnetic Field

As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.

Performance analysis of differential spin hall effect (DSHE)-MRAM-based logic gates

Circuit World ◽  
2019 ◽  
Vol 45 (4) ◽  
pp. 300-310
Author(s):  
Piyush Tankwal ◽  
Vikas Nehra ◽  
Sanjay Prajapati ◽  
Brajesh Kumar Kaushik
Keyword(s):  
Hall Effect ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Logic Gates ◽  
Cmos Technology ◽  
Spin Transfer Torque ◽  
Spin Hall Effect ◽  
Oxide Semiconductor ◽  
Content Type

Purpose The purpose of this paper is to analyze and compare the characteristics of hybrid conventional complementary metal oxide semiconductor/magnetic tunnel junction (CMOS/MTJ) logic gates based on spin transfer torque (STT) and differential spin Hall effect (DSHE) magnetic random access memory (MRAM). Design/methodology/approach Spintronics technology can be used as an alternative to CMOS technology as it is having comparatively low power dissipation, non-volatility, high density and high endurance. MTJ is the basic spin based device that stores data in form of electron spin instead of charge. Two mechanisms, namely, STT and SHE, are used to switch the magnetization of MTJ. Findings It is observed that the power consumption in DSHE based logic gates is 95.6% less than the STT based gates. DSHE-based write circuit consumes only 5.28 fJ energy per bit. Originality/value This paper describes how the DSHE-MRAM is more effective for implementing logic circuits in comparison to STT-MRAM.

VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY IN SPINTRONIC DEVICES

SPIN ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1240002 ◽  
Author(s):  
PEDRAM KHALILI AMIRI ◽  
KANG L. WANG
Keyword(s):  
Magnetic Anisotropy ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Magnetic Films ◽  
Magnetization Dynamics ◽  
Spintronic Devices ◽  
Magnetic Random Access Memory ◽  
Thin Magnetic Films ◽  
Potential Applications ◽  
New Generation

Electric-field-control of magnetism can dramatically improve the energy efficiency of spintronic devices and enhance the performance of magnetic memories. More generally, it expands the range of applications of nonvolatile spintronic devices, by making them energetically competitive compared to conventional semiconductor solutions for logic and computation, thereby potentially enabling a new generation of ultralow-power nonvolatile spintronic systems. This paper reviews recent experiments on the voltage-controlled magnetic anisotropy (VCMA) effect in thin magnetic films, and their device implications. The interfacial perpendicular anisotropy in layered magnetic material stacks, as well as its modulation by voltage, are discussed. Ferromagnetic resonance experiments and VCMA-induced high-frequency magnetization dynamics are reviewed. Finally, we discuss recent progress on voltage-induced switching of magnetic tunnel junction devices and its potential applications to magnetic random access memory (MRAM).

Spin Hall effect-controlled magnetization dynamics in NiMnSb

2015 ◽  
Vol 117 (17) ◽  
pp. 17E103 ◽  
Author(s):  
P. Dürrenfeld ◽  
F. Gerhard ◽  
M. Ranjbar ◽  
C. Gould ◽  
L. W. Molenkamp ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Magnetization Dynamics
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