scholarly journals Determination of the spin Hall angle by the inverse spin Hall effect, device level ferromagnetic resonance, and spin torque ferromagnetic resonance: A comparison of methods

2021 ◽  
Vol 119 (4) ◽  
pp. 042401
Author(s):  
Ranen Ben-Shalom ◽  
Nirel Bernstein ◽  
Stuart S. P. Parkin ◽  
See-Hun Yang ◽  
Amir Capua
Keyword(s):  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Comparison Of Methods ◽  
Hall Angle ◽  
Inverse Spin Hall Effect

Influence of inverse spin Hall effect in spin-torque ferromagnetic resonance measurements

2016 ◽  
Vol 9 (2) ◽  
pp. 023002 ◽  
Author(s):  
Kouta Kondou ◽  
Hiroaki Sukegawa ◽  
Shinya Kasai ◽  
Seiji Mitani ◽  
Yasuhiro Niimi ◽  
...  
Keyword(s):  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Inverse Spin Hall Effect

Influence of the spin pumping induced inverse spin Hall effect on spin-torque ferromagnetic resonance measurements

2021 ◽  
Vol 118 (13) ◽  
pp. 132401
Author(s):  
Qi Liu ◽  
Y. Zhang ◽  
L. Sun ◽  
Bingfeng Miao ◽  
X. R. Wang ◽  
...  
Keyword(s):  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Spin Pumping ◽  
Inverse Spin Hall Effect

Electrical determination of spin mixing conductance at metal/insulator interface using inverse spin Hall effect

2012 ◽  
Vol 111 (7) ◽  
pp. 07C307 ◽  
Author(s):  
R. Takahashi ◽  
R. Iguchi ◽  
K. Ando ◽  
H. Nakayama ◽  
T. Yoshino ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Metal Insulator ◽  
Insulator Interface ◽  
Inverse Spin Hall Effect

scholarly journals Modulation of spin-torque ferromagnetic resonance with a nanometer-thick platinum by ionic gating

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Ryo Ohshima ◽  
Yuto Kohsaka ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Masashi Shiraishi
Keyword(s):  
Hall Effect ◽  
Memory Loss ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Spin Orbit ◽  
Metallic Materials ◽  
Spintronic Devices ◽  
Damping Parameter ◽  
Inverse Spin Hall Effect ◽  
High Bulk

AbstractThe spin Hall effect (SHE) and inverse spin Hall effect (ISHE) have played central roles in modern condensed matter physics especially in spintronics and spin-orbitronics, and much effort has been paid to fundamental and application-oriented research towards the discovery of novel spin–orbit physics and the creation of novel spintronic devices. However, studies on gate-tunability of such spintronics devices have been limited, because most of them are made of metallic materials, where the high bulk carrier densities hinder the tuning of physical properties by gating. Here, we show an experimental demonstration of the gate-tunable spin–orbit torque in Pt/Ni80Fe20 (Py) devices by controlling the SHE using nanometer-thick Pt with low carrier densities and ionic gating. The Gilbert damping parameter of Py and the spin-memory loss at the Pt/Py interface were modulated by ionic gating to Pt, which are compelling results for the successful tuning of spin–orbit interaction in Pt.

scholarly journals Simultaneous observation of anti-damping and inverse spin Hall effect in La0.67Sr0.33MnO3/Pt bilayer system

Nanoscale ◽  
2021 ◽  
Author(s):  
Pushpendra Gupta ◽  
Brajbhusan Singh ◽  
Koustuv Roy ◽  
Anirban Sarkar ◽  
Markus Waschk ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Polarization ◽  
Ferromagnetic Resonance ◽  
High Spin ◽  
Spin Hall Effect ◽  
Damping Properties ◽  
Simultaneous Observation ◽  
System P ◽  
High Spin Polarization ◽  
Inverse Spin Hall Effect

Manganites have shown potential in spintronics because they exhibit high spin polarization. Here, by ferromagnetic resonance we have studied the damping properties of La0:67Sr0:33MnO3/Pt bilayers which are prepared by oxide...

scholarly journals Modulation of Spin-Torque Ferromagnetic Resonance with a Nanometer-Thick Platinum by Ionic Gating

2021 ◽  
Author(s):  
Ryo Ohshima ◽  
Yuto Kohsaka ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Masashi Shiraishi
Keyword(s):  
Hall Effect ◽  
Memory Loss ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Spin Orbit ◽  
Metallic Materials ◽  
Spintronic Devices ◽  
Damping Parameter ◽  
Inverse Spin Hall Effect ◽  
High Bulk

Abstract The spin Hall effect (SHE) and inverse spin Hall effect (ISHE) have played central roles in modern condensed matter physics especially in spintronics and spin-orbitronics, and much effort has been paid to fundamental and application-oriented research towards the discovery of novel spin-orbit physics and the creation of novel spintronic devices. However, studies on gate-tunability of such spintronics devices have been limited, because most of them are made of metallic materials, where the high bulk carrier densities hinder the tuning of physical properties by gating. Here, we show an experimental demonstration of the gate-tunable spin-orbit torque in Pt/Ni80Fe20 (Py) devices by controlling the SHE using nanometer-thick Pt with low carrier densities and ionic gating. The Gilbert damping parameter of Py and the spin-memory loss at the Pt/Py interface were modulated by ionic gating to Pt, which are compelling results for the successful tuning of spin-orbit interaction in Pt.

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