GaN Growth on Si Using ZnO Buffer Layer

2003 ◽  
Vol 764 ◽  
Author(s):  
K.C. Kim ◽  
S.W. Kang ◽  
O. Kryliouk ◽  
T.J. Anderson ◽  
D. Craciun ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Silicon Substrates ◽  
Zno Buffer Layer ◽  
Thermal Stability Of

AbstractZnO films were deposited by Pulsed Laser Deposition (PLD) onto silicon substrates to serve as a buffer layer for GaN films grown by MOCVD. A ZnO buffer layer was found to improve the quality of GaN grown on Si. The thermal stability of ZnO as a buffer layer was also examined. It was determined that exposure of ZnO/Si to NH3 at high temperature (> 600°C) results in the decomposition of ZnO and subsequent poor nucleation of GaN. The ZnO layer thickness on GaN quality was found to be important.

Large-sized-mismatched group-V element doped ZnO films fabricated on silicon substrates by pulsed laser deposition

Vacuum ◽  
2010 ◽  
Vol 84 (11) ◽  
pp. 1306-1309 ◽  
Author(s):  
Xiaofeng Xu ◽  
Yiqun Shen ◽  
Ning Xu ◽  
Wei Hu ◽  
Jushui Lai ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Silicon Substrates ◽  
Group V ◽  
Doped Zno

Annealing behaviors of structural, interfacial and optical properties of HfO2 thin films prepared by plasma assisted reactive pulsed laser deposition

2010 ◽  
Vol 25 (4) ◽  
pp. 680-686 ◽  
Author(s):  
Zhifeng Ying ◽  
Wentao Tang ◽  
Zhigao Hu ◽  
Wenwu Li ◽  
Jian Sun ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Optical Properties ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Temperature Annealing ◽  
Good Thermal Stability ◽  
Transmission Measurements ◽  
Deposited Films

The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65–5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.

Effect of nitrogenized Si(1 1 1) substrates on the quality of ZnO films grown by pulsed laser deposition

2008 ◽  
Vol 42 (3) ◽  
pp. 035307 ◽  
Author(s):  
L Wang ◽  
Y C Liu ◽  
C S Xu ◽  
Y Q Qiu ◽  
L Zhao ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films
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