scholarly journals Modeling of Memristive and Memcapacitive Behaviors in Metal-Oxide Junctions

2015 ◽  
Vol 2015 ◽  
pp. 1-16 ◽  
Author(s):  
M. G. A. Mohamed ◽  
HyungWon Kim ◽  
Tae-Won Cho
Keyword(s):  
Metal Oxide ◽  
Physical Model ◽  
Tunneling Current ◽  
Behavioral Modeling ◽  
Capacitance Change ◽  
Thin Filaments ◽  
Memristive Behavior ◽  
Modeling Techniques ◽  
Voltage Dependent ◽  
Simulation Results

Memristive behavior has been clearly addressed through growth and shrinkage of thin filaments in metal-oxide junctions. Capacitance change has also been observed, raising the possibility of using them as memcapacitors. Therefore, this paper proves that metal-oxide junctions can behave as a memcapacitor element by analyzing its characteristics and modeling its memristive and memcapacitive behaviors. We develop two behavioral modeling techniques: charge-dependent memcapacitor model and voltage-dependent memcapacitor model. A new physical model for metal-oxide junctions is presented based on conducting filaments variations, and its effect on device capacitance and resistance. In this model, we apply the exponential nature of growth and shrinkage of thin filaments and use Simmons’ tunneling equation to calculate the tunneling current. Simulation results show how the variations of practical device parameters can change the device behavior. They clarify the basic conditions for building a memcapacitor device with negligible change in resistance.

Experimental and Simulation Results of Magnetic Modulation of Gate Oxide Tunneling Current in Nanoscaled MOS Transistors

2015 ◽  
Vol 36 (4) ◽  
pp. 387-389 ◽  
Author(s):  
Gabriela A. Rodriguez-Ruiz ◽  
Edmundo A. Gutierrez-Dominguez ◽  
Arturo Sarmiento-Reyes ◽  
Zlatan Stanojevic ◽  
Hans Kosina ◽  
...  
Keyword(s):  
Tunneling Current ◽  
Gate Oxide ◽  
Mos Transistors ◽  
Simulation Results ◽  
Gate Oxide Tunneling

Haptic Rendering: Practical Modeling and Collision Detection

1999 ◽  
Author(s):  
ZhuLiang Cai ◽  
John Dill ◽  
Shahram Payandeh
Keyword(s):  
Surgical Training ◽  
Collision Detection ◽  
Object Representation ◽  
Virtual Assembly ◽  
Detection Algorithm ◽  
Haptic Rendering ◽  
3D Object ◽  
Modeling Techniques ◽  
Simulation Results ◽  
Fast Collision

Abstract 3D collision detection and modeling techniques can be used in the development of haptic rendering schemes which can be used, for example, in surgical training, virtual assembly, or games. Based on a fast collision detection algorithm (RAPID) and 3D object representation, a practical haptic rendering system has been developed. A sub-system determines detailed collision information. Simulation results are presented to demonstrate the practicality of our results.

scholarly journals Nanopore-Based DNA Analysis via Graphene Electrodes

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Qing Zhao ◽  
Yang Wang ◽  
Jianjin Dong ◽  
Lina Zhao ◽  
X. F. Rui ◽  
...  
Keyword(s):  
Genome Sequencing ◽  
Dna Analysis ◽  
Low Cost ◽  
Tunneling Current ◽  
Single Atom ◽  
Simulation Results

We propose an improvement for nanopore-based DNA analysis via transverse transport using graphene as transverse electrodes. Our simulation results show conspicuous distinction of tunneling current during translocation of different nucleotides through nanopore. Applying the single-atom thickness property of graphene, our findings demonstrate the feasibility of using graphene as transverse electrodes in future rapid and low-cost genome sequencing.

A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits

2004 ◽  
Vol 48 (2) ◽  
pp. 259-270 ◽  
Author(s):  
Ji-Woon Yang ◽  
Jerry G. Fossum ◽  
Glenn O. Workman ◽  
Cheng-Liang Huang
Keyword(s):  
Physical Model ◽  
Tunneling Current ◽  
Floating Body ◽  
Soi Cmos

scholarly journals Flux Reflection Model of the Ferroresonant Circuit

2009 ◽  
Vol 2009 ◽  
pp. 1-13 ◽  
Author(s):  
Kruno Miličević ◽  
Ivan Flegar ◽  
Denis Pelin
Keyword(s):  
Physical Model ◽  
Linear Model ◽  
Nonlinear Model ◽  
Steady States ◽  
Reflection Model ◽  
Proposed Model ◽  
Simulation Results ◽  
Ferroresonant Circuit ◽  
Nonlinear Coil

The paper presents a linear model of ferroresonant circuit with flux reflection. The proposed model—flux reflection model—derives from observations of typical flux waveforms of nonlinear coil during ferroresonant steady states. Simulation results of the flux reflection model are compared with simulation results of the usual nonlinear model as well as with measurements carried out on the physical model of the ferroresonant circuit. The flux reflection model enables a novel comprehension of the ferroresonant circuit behavior and simplifies the modeling of the nonlinear coil in the ferroresonant circuit.

Study on Numerical Simulation of Fire and Evacuation for a Supermarket

2015 ◽  
Vol 744-746 ◽  
pp. 1736-1740 ◽  
Author(s):  
Si Hui Dong ◽  
Min Li ◽  
Yu Han Lin
Keyword(s):  
Numerical Simulation ◽  
Physical Model ◽  
Development Process ◽  
Fire Danger ◽  
Actual Situation ◽  
Study Results ◽  
Simulation Results ◽  
Fire Scene ◽  
Safety Evacuation

3D physical model of a supermarket was constructed with Pyrosim software, and the fire scene was set according to the actual situation. The fire development process and personnel evacuation process were simulated with FDS. The fire danger time of the fire scene was analyzed according to the smoke temperature and visibility of different time. The personnel evacuation process to the supermarket was simulated with the evacuation software Evac, and the required safety egress time was calculated. By comparing the fire danger time and the required safety egress time, the conclusion was drawn that the supermarket can not meet the requirement for safety evacuation. After changing the conditions for safety evacuation, the required safety egress time was simulated again. And the simulation results showed that the changed evaluation conditions can meet the requirement for safety evacuation. The study results provide a basis to improve the safety evacuation conditions of the supermarket.

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