scholarly journals High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Hyun Jung Kim ◽  
Yeonjoon Park ◽  
Hyung Bin Bae ◽  
Sang H. Choi
Keyword(s):  
Single Crystal ◽  
Electron Mobility ◽  
Defect Density ◽  
Device Fabrication ◽  
High Electron ◽  
Doping Density ◽  
High Electron Mobility ◽  
Rf Devices ◽  
High Carrier ◽  
P Type

High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities of germanium (p-type Si: 430 cm2/V·s, p-type Ge: 2200 cm2/V·s, n-type Si: 1300 cm2/V·s, and n-type Ge: 3000 cm2/V·s at 1016per cm3doping density). Therefore, radio frequency devices which are made with rhombohedral SiGe onc-plane sapphire can potentially run a few times faster than RF devices on SOS wafers. NASA Langley has successfully grown highly ordered single crystal rhombohedral epitaxy using an atomic alignment of the[111]direction of cubic SiGe on top of the[0001]direction of the sapphire basal plane. Several samples of rhombohedrally grown SiGe onc-plane sapphire show high percentage of a single crystalline over 95% to 99.5%. The electron mobilities of the tested samples are between those of single crystals Si and Ge. The measured electron mobility of 95% single crystal SiGe was 1538 cm2/V·s which is between 350 cm2/V·s (Si) and 1550 cm2/V·s (Ge) at 6 × 1017/cm3doping concentration.

scholarly journals InAlAs/InGaAs/InP HEMTs с композитным каналом и улучшенными пробивными характеристиками

2019 ◽  
Vol 45 (21) ◽  
pp. 29
Author(s):  
Н.А Малеев ◽  
А.П. Васильев ◽  
А.Г. Кузьменков ◽  
М.А. Бобров ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Current Density ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Device Fabrication ◽  
Fabrication Process ◽  
Channel Structure ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility

High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse breakdown voltages as high as 8–10 V. Devices cut-off frequency exceed 115 GHz. Because of increased breakdown voltage and fully selective double recess fabrication process designed HEMTs are promising for medium power mm-wave MMIC amplifiers.

An asymmetric naphthalimide derivative for n-channel organic field-effect transistors

2015 ◽  
Vol 17 (40) ◽  
pp. 26519-26524 ◽  
Author(s):  
Zongrui Wang ◽  
Jianfeng Zhao ◽  
Huanli Dong ◽  
Ge Qiu ◽  
Qichun Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron ◽  
Organic Field Effect Transistors ◽  
High Electron Mobility

A novel asymmetric naphthalimide derivative (IZ0) is synthesized and high electron mobility of 0.072 cm2V−1s−1and 0.22 cm2V−1s−1are achieved for IZ0 film and single crystal-based transistors, respectively.

scholarly journals A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 377 ◽  
Author(s):  
Fanming Zeng ◽  
Judy An ◽  
Guangnan Zhou ◽  
Wenmao Li ◽  
Hui Wang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Recent Progress ◽  
High Electron Mobility Transistors ◽  
Device Fabrication ◽  
High Electron ◽  
Simulation Studies ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Device Structures ◽  
High Frequency Devices

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

Materials and Device Characteristics of Pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP High Electron Mobility Transistors

1989 ◽  
Vol 160 ◽  
Author(s):  
J.M. Ballingall ◽  
Pin Ho ◽  
G J. Tessmer ◽  
P.A. Martin ◽  
T.H. Yu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Device Fabrication ◽  
High Electron ◽  
Single Quantum Well ◽  
High Electron Mobility ◽  
Molecular Beam Epitaxial ◽  
Electron Mobility Transistors ◽  
Current State ◽  
Molecular Beam Epitaxial Growth

AbstractHigh electron mobility transistors (HEMTs) with single quantum well active layers composed of pseudomorphic IπGaAs grown on GaAs and InP are establishing new standards of performance for microwave and millimeter wave applications. This is due to recent progress in the molecular beam epitaxial growth of strained InGaAs heterostructures coupled with developments in short gate length (sub%0.2 µm) device fabrication technology. This paper reviews this progress and the current state-of-the-art for materials and devices.

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