AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Kazuyuki Hirama; Yoshitaka Taniyasu; Makoto Kasu

doi:10.1063/1.3574531

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.3574531 ◽

2011 ◽

Vol 98 (16) ◽

pp. 162112 ◽

Cited By ~ 44

Author(s):

Kazuyuki Hirama ◽

Yoshitaka Taniyasu ◽

Makoto Kasu

Keyword(s):

Thermal Resistance ◽

Single Crystal ◽

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Single Crystal Diamond

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Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.01ad01 ◽

2017 ◽

Vol 57 (1S) ◽

pp. 01AD01 ◽

Cited By ~ 1

Author(s):

Atsushi Yamada ◽

Tetsuro Ishiguro ◽

Junji Kotani ◽

Norikazu Nakamura

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Spacer Layer

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Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.05fk03 ◽

2016 ◽

Vol 55 (5S) ◽

pp. 05FK03 ◽

Cited By ~ 2

Author(s):

Atsushi Yamada ◽

Tetsuro Ishiguro ◽

Junji Kotani ◽

Shuichi Tomabechi ◽

Norikazu Nakamura ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7939 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7939-7943 ◽

Cited By ~ 15

Author(s):

Makoto Miyoshi ◽

Masahiro Sakai ◽

Subramaniam Arulkumaran ◽

Hiroyasu Ishikawa ◽

Takashi Egawa ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Al Content ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.1418452 ◽

2001 ◽

Vol 79 (21) ◽

pp. 3527-3529 ◽

Cited By ~ 197

Author(s):

P. B. Klein ◽

S. C. Binari ◽

K. Ikossi ◽

A. E. Wickenden ◽

D. D. Koleske ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cf02 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CF02 ◽

Cited By ~ 6

Author(s):

Masanobu Hiroki ◽

Noriyuki Watanabe ◽

Narihiko Maeda ◽

Haruki Yokoyama ◽

Kazuhide Kumakura ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l1718 ◽

1991 ◽

Vol 30 (Part 2, No. 10A) ◽

pp. L1718-L1721 ◽

Cited By ~ 7

Author(s):

Toshihide Kikkawa ◽

Tatsuya Ohori ◽

Eizou Mitani ◽

Masahisa Suzuki ◽

Hitoshi Tanaka ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

Chinese Physics B ◽

10.1088/1674-1056/20/2/027202 ◽

2011 ◽

Vol 20 (2) ◽

pp. 027202 ◽

Cited By ~ 12

Author(s):

Guang-Chen Zhang ◽

Shi-Wei Feng ◽

Zhou Zhou ◽

Jing-Wan Li ◽

Chun-Sheng Guo

Keyword(s):

Thermal Resistance ◽

Structure Function ◽

Electron Mobility ◽

Function Method ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlGaAs/GaAs double‐heterojunction high electron mobility transistors grown by low‐pressure organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.345244 ◽

1990 ◽

Vol 67 (1) ◽

pp. 550-552 ◽

Cited By ~ 3

Author(s):

Rong‐Ting Huang ◽

Yung‐Yi Tu ◽

Dumrong Kasemset ◽

N. Nouri ◽

C. Colvard ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

High Electron ◽

Organometallic Vapor Phase Epitaxy ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4891629 ◽

2014 ◽

Vol 32 (5) ◽

pp. 051203 ◽

Cited By ~ 4

Author(s):

Travis Anderson ◽

Andrew Koehler ◽

Ya-Hsi Hwang ◽

Yueh-Ling Hsieh ◽

Shun Li ◽

...

Keyword(s):

Thermal Resistance ◽

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

physica status solidi (a) ◽

10.1002/pssa.201900760 ◽

2020 ◽

Vol 217 (7) ◽

pp. 1900760

Author(s):

Eric Frayssinet ◽

Luan Nguyen ◽

Marie Lesecq ◽

Nicolas Defrance ◽

Maxime Garcia Barros ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Vapor Phase Epitaxy ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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