scholarly journals Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Jingjing Jin ◽  
Shengdong Hu ◽  
Yinhui Chen ◽  
Kaizhou Tan ◽  
Jun Luo ◽  
...  
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Simulation Software ◽  
Silicon On Insulator ◽  
Doping Profile ◽  
High Concentration ◽  
Buried Oxide ◽  
2D Simulation ◽  
Breakdown Mechanism

In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed at the interface between the SOI layer and the buried-oxide (BOX) layer (LVID SOI) is researched. Its breakdown mechanism is investigated theoretically, and its structure parameters are optimized and analyzed by 2D simulation software MEDICI. In the high voltage blocking state, the high concentration ionized donors in the depleted LVID make the surface electric field of SOI layer (ES) more uniform and enhance the electric field of BOX layer (EI), which can prevent the lateral premature breakdown and result in a higher BV. Compared with the conventional uniformly doped (UD) SOI LDMOS,EIof the optimized LVID SOI LDMOS is enhanced by 79% from 119 V/μm to 213 V/μm, and BV is increased by 33.4% from 169 V to 227 V. Simulations indicate that the method of LVID profile can significantly improve breakdown voltage for the SOI LDMOS.

The Silicon Plates in Buried Oxide for Enhancement of the Breakdown Voltage in SOI MESFET

2014 ◽  
Vol 538 ◽  
pp. 58-61
Author(s):  
Amir Reza Estakhrian Haghighi ◽  
Mojtaba Mohamadi
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Breakdown Voltage ◽  
Field Effect Transistor ◽  
Electric Field Distribution ◽  
Silicon On Insulator ◽  
Output Resistance ◽  
Buried Oxide ◽  
Conventional Structure ◽  
Effect Transistor

This paper introduces a novel SOI MESFET which enhancement breakdown voltage (VBR) by modifying electric field distribution. To achieve high enhancement of the VBR utilized three Silicon plates in buried oxide of the silicon on insulator metal semiconductor field effect transistor (SOI MESFET). This change in the SOI MESFET structure leads to controlled electric field distribution , increase VBR and Output Resistance (RO). The numerical simulation results show that the VBR of the Silicon Plates SOI MESFET (SP-SOI MESFET) structure improves by 50% compared with that of the conventional SOI MESFET (C-SOI MESFET) structure. As a result, the SP-SOI MESFET structure has superior electrical performances in comparison with the conventional structure.

Thermal breakdown in high voltage direct current cable insulations due to space charges

2018 ◽  
Vol 37 (5) ◽  
pp. 1689-1697 ◽  
Author(s):  
Christoph Jörgens ◽  
Markus Clemens
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Direct Current ◽  
Aging Effect ◽  
Radial Symmetry ◽  
Thermal Breakdown ◽  
Content Type ◽  
High Voltage Direct Current ◽  
Space Charges

Purpose In high voltage direct current (HVDC), power cables heat is generated inside the conductor and the insulation during operation. A higher amount of the generated heat in comparison to the dissipated one, results in a possible thermal breakdown. The accumulation of space charges inside the insulation results in an electric field that contributes to the geometric electric field, which comes from the applied voltage. The total electric field decreases in the vicinity of the conductor, while it increases near the sheath, causing a possible change of the breakdown voltage. Design/methodology/approach Here, the thermal breakdown is studied, also incorporating the presence of space charges. For a developed electro-thermal HVDC cable model, at different temperatures, the breakdown voltage is computed through numerical simulations. Findings The simulation results show a dependence of the breakdown voltage on the temperature at the location of the sheath. The results also show only limited influence of the space charges on the breakdown voltage. Research limitations/implications The study is restricted to one-dimensional problems, using radial symmetry of the cable, and does not include any aging or long-term effect of space charges. Such aging effect can locally increase the electric field, resulting in a reduced breakdown voltage. Originality/value A comparison of the breakdown voltage with and without space charges is novel. The chosen approach allows for the first time to assess the influence of space charges and field inversion on the thermal breakdown.

scholarly journals Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

Electronics ◽  
2019 ◽  
Vol 8 (4) ◽  
pp. 406 ◽  
Author(s):  
Biyan Liao ◽  
Quanbin Zhou ◽  
Jian Qin ◽  
Hong Wang
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Structural Parameters ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Insulator Layer ◽  
Field Plate ◽  
2D Simulation ◽  
Gan Hemts ◽  
Drain Field

A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of geometrical variables of FP and insulator layer on electric field distribution and VBD are investigated systematically. The FPs can modulate the potential lines and distribution of an electric field, and the insulator layer would influence the modulation effect of FPs. In addition, we designed a structure of HEMT which simultaneously contains gate FP, source FP and drain FP. It is found that the VBD of AlGaN/GaN HEMTs can be improved greatly with the corporation of gate FP, source FP and drain FP. We achieved the highest VBD in the HEMT contained with three FPs by optimizing the structural parameters including length of FPs, thickness of FPs, and insulator layer. For HEMT with three FPs, FP-S alleviates the concentration of the electric field more effectively. When the length of the source FP is 24 μm and the insulator thickness between the FP-S and the AlGaN surface is 1950 nm, corresponding to the average electric field of about 3 MV/cm at the channel, VBD reaches 2200 V. More importantly, the 2D simulation model is based on a real HMET device and will provide guidance for the design of a practical device.

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

2007 ◽  
Vol 556-557 ◽  
pp. 1007-1010 ◽  
Author(s):  
Christophe Raynaud ◽  
Daniel Loup ◽  
Phillippe Godignon ◽  
Raul Perez Rodriguez ◽  
Dominique Tournier ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Semiconductor Devices ◽  
Optical Beam ◽  
Induced Current ◽  
Bipolar Diodes ◽  
High Electric Fields ◽  
Optical Beam Induced Current

High voltage SiC semiconductor devices have been successfully fabricated and some of them are commercially available [1]. To achieve experimental breakdown voltage values as close as possible to the theoretical value, i.e. value of the theoretical semi-infinite diode, it is necessary to protect the periphery of the devices against premature breakdown due to locally high electric fields. Mesa structures and junction termination extension (JTE) as well as guard rings, and combinations of these techniques, have been successfully employed. Each of them has particular drawbacks. Especially, JTE are difficult to optimize in terms of impurity dose to implant, as well as in terms of geometric dimensions. This paper is a study of the spreading of the electric field at the edge of bipolar diodes protected by JTE and field rings, by optical beam induced current.

A New Slope SOI-LDMOS High-Voltage Power Device

2012 ◽  
Vol 236-237 ◽  
pp. 797-800
Author(s):  
Xiao Ming Yang ◽  
Yu Cai ◽  
Tian Qian Li
Keyword(s):  
Oxide Layer ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Power Device ◽  
Drift Region ◽  
Electrical Field ◽  
New Device ◽  
Buried Oxide ◽  
Drain Electrode ◽  
Surface Electric Field

A slope SOI-LDMOS power device is proposed for high-voltage. When a positive bais is applied to the drain electrode, holes are induced and astricted by the slope buried oxide layer. So a high density positive charge layer is formed on the buried oxide layer. The electrical field in the buried oxide is improved as well as vertical breakdown voltage by the layer. Because the thickness of the drift region linearly increases from the source to the drain, the surface electric field is optimized, resulting in increase of lateral breakdown voltage. In this paper, the electric characteristics of the new device are simulated by Medici softerware. The result is shown that above 600 V breakdown voltage is obtained at 1μm thick buried oxide layer. The breakdown voltage is higher by three times than that of conventional SOI LDMOS.

scholarly journals Impulse Breakdown Characteristics of Main Gap in the Presence of a Local Discharge

2019 ◽  
Vol 6 (2) ◽  
pp. 413-423
Author(s):  
Abderrahmane Settaouti
Keyword(s):  
Breakdown Voltage ◽  
Electric Discharge ◽  
High Voltage ◽  
Discharge Channel ◽  
Dielectric Breakdown ◽  
Metallic Electrode ◽  
Factors Affecting ◽  
Electrode Location ◽  
The Third ◽  
Breakdown Mechanism

The characteristics of impulse breakdown voltages and the influence of the position of third electrode in air gap are investigated experimentally to study the parameters influencing the breakdown voltage in the presence of metallic objects around the high voltage power apparatus with air insulation. Experimental results show that the factors affecting the breakdown voltage are the shape and the size of the grounded electrode, the third metallic electrode location and the gap length. A comparison between negative and positive polarities of the applied voltages indicates an important influence of the polarity in the dielectric breakdown mechanism. The possible mechanism by which the local electric discharge initiates the main dielectric breakdown seems to be the high electric field around the local discharge channel and the streamers protruding from its surface.

THE IMPROVEMENT OF THE HIGH VOLTAGE TESTING METHOD

2019 ◽  
pp. 4-14
Author(s):  
V. A. Syasko ◽  
S. S. Golubev ◽  
A. S. Musikhin
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Homogeneous Field ◽  
Inhomogeneous Field ◽  
Minimum Thickness ◽  
Air Gaps ◽  
Testing Method ◽  
Almost All

The high voltage spark testing method of protective dielectric coatings is applied in almost all manufacture areas and is governed by ISO, ASTM etc. However, all of it doesn’t pay proper attention to high voltage forming (DC or AC) and its polarity relative to electrode, influence of environment and electric field inhomogeneity. In that paper a detailed analysis of air gap breakdown forming processes was given. A dependence of electric field strength on an interelectrode gap length was given for homogeneous and highly inhomogeneous electric fields. It was shown a breakdown voltage of air gaps in highly inhomogeneous field is greatly less than in homogeneous field. Also, it is described the breakdown voltage of air gaps with positive polarity is less then with negative polarity. The possibility coatings testing with a minimum thickness up to 50 m while reducing the testing voltage without reducing the reliability of the results is shown.

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