scholarly journals Influence of Deposition Rate on the Thermoelectric Properties of Sb2Te3Thin Films by Thermal Evaporation Method

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Wei Chen
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Si Substrates ◽  
Cooling Devices

Thermoelectric (TE) materials are crucial because they can be used in power generation and cooling devices. Sb2Te3-based compounds are the most favorable TE materials because of their excellent figure of merit at room temperature. In this study, Sb2Te3thin films were prepared on SiO2/Si substrates through thermal evaporation. The influence of the evaporation current on the microstructures and TE properties of Sb2Te3thin films were investigated. The crystalline structures and morphologies of the thin films were analyzed using X-ray diffraction and field emission scanning electron microscopy. The Seebeck coefficient, electrical conductivity, and power factor (PF) were measured at room temperature. The experimental results showed that the Seebeck coefficient increased and conductivity decreased with increasing evaporation current. The Seebeck coefficient reached a maximum of 387.58 μV/K at an evaporation current of 80 A. Conversely, a PF of 3.57 µW/cmK2was obtained at room temperature with evaporation current of 60 A.

scholarly journals Annealing Effect on the Thermoelectric Properties of Bi2Te3Thin Films Prepared by Thermal Evaporation Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Chi-Pi Lin
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Si Substrates ◽  
Seebeck Coefficients

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

scholarly journals Effect of thickness on structural properties of BixSb2-xTe3 thin films

2019 ◽  
Vol 17 (41) ◽  
pp. 15-28
Author(s):  
Hussain. M. Selman
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Average Surface Roughness ◽  
X Ray Diffraction ◽  
Polycrystalline Structure ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Different Thickness

BixSb2-xTe3 alloys with different ratios of Bi (x=0, 0.1, 0.3, 0.5, and 2) have been prepared, Thin films of these alloys were prepared using thermal evaporation method under vacuum of 10-5 Torr on glass substrates at room temperature with different deposition rate (0.16, 0.5, 0.83) nm/sec for thickness (100, 300, 500) respectively. The X–ray diffraction measurements for BixSb2-xTe3 bulk and thin films indicate the polycrystalline structure with a strong intensity of peak of plane (015) preferred orientation with additional peaks, (0015) and (1010 ) reflections planes, which is meaning that all films present a very good texture along the (015) plane axis at different intensities for each thin film for different thickness. AFM measurements for the thin films of BixSb2-xTe3, show that the grain size and the average surface roughness decreases with increasing of the percentage Bi for different thickness.

Growth of halide perovskites thin films for thermoelectric applications

MRS Advances ◽  
2019 ◽  
Vol 4 (30) ◽  
pp. 1719-1725 ◽  
Author(s):  
Shrikant Saini ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
Shuzi Hayase ◽  
Koji Miyazaki
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Cost Effective ◽  
Thermoelectric Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Halide Perovskites

ABSTRACTThermoelectric materials can play an important role to develop a sustainable energy source for internet of things devices near room temperature. In this direction, it is important to have a thermoelectric material with high thermoelectric performance. Cesium tin triiodide (CsSnI3) single crystal perovskite has shown high value of Seebeck coefficient and ultra low thermal conductivity which are necessary conditions for high thermoelectric performance. Here, we report the thermoelectric response of CsSnI3 thin films. These films are prepared by cost effective wet spin coating process at different baking temperature. Films were characterized using X-ray diffraction and scanning electron microscopy. In our case, films baked at 130°C for 5 min have shown the best thermoelectric performance at room temperature with: Seebeck coefficient 115 μV/K and electrical conductivity 124 S/cm, thermal conductivity 0.36 W/m·K and figure of merit ZT of 0.137.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

scholarly journals Compositional Dependence of Structural Properties of Prepared Alloys and Films

2011 ◽  
Vol 2011 ◽  
pp. 1-6
Author(s):  
M. F. A. Alias ◽  
A. A. J. Al-Douri ◽  
E. M. N. Al-Fawadi ◽  
A. A. Alnajjar
Keyword(s):  
Room Temperature ◽  
Thermal Evaporation ◽  
High Accuracy ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Good Agreement

Results of a study of alloys and films with various Pb content have been reported and discussed. Films of of thickness 1.5 μm have been deposited on glass substrates by flash thermal evaporation method at room temperature, under vacuum at constant deposition rate. These films were annealed under vacuum around 10−6Torr at different temperatures up to 523 K. The composition of the elements in alloys was determined by standard surfaces techniques such as atomic absorption spectroscopy (AAS) and X-ray fluorescence (XRF), and the results were found of high accuracy and in very good agreement with the theoretical values. The structure for alloys and films is determined by using X-ray diffraction. This measurement reveals that the structure is polycrystalline with cubic structure and there are strong peaks at the direction (200) and (111). The effect of heat treatment on the crystalline orientation, relative intensity, and grain size of films is presented.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Structural, Magnetic, and Electrical Properties of BiFe1-xMnxO3 Thin Films

2009 ◽  
Vol 1199 ◽  
Author(s):  
Danilo G Barrionuevo ◽  
Surinder P Singh ◽  
Maharaj S. Tomar
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Magnetic Measurements ◽  
Sol Gel ◽  
Ion Concentration ◽  
Ferromagnetic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Sol Gel Process

AbstractWe synthesized BiFe1-xMnxO3 (BFMO) for various compositions by sol gel process and thin films were deposited by spin coating on platinum Pt/Ti/SiO2/Si substrates. X-ray diffraction shows all the diffraction planes corresponding to rhombohedrally distorted perovskite BiFeO3 structure. The absence of any impurity phase in the films suggests the incorporation Mn ion preferentially to Fe site in the structure for low concentration. Magnetic measurements reveal the formation of ferromagnetic phase at room temperature with increased Mn substitution. On the other hand, ferroelectric polarization decreases with increasing Mn ion concentration. Raman studies suggest the dopant induced structural distortion.

Structural and Optical Properties of Thermally Evaporated BiSb2S3 Thin Films

2013 ◽  
Vol 678 ◽  
pp. 123-130 ◽  
Author(s):  
K. Kandaswamy ◽  
Panneerselvam Chirstopher Selvin ◽  
B. Nalini ◽  
I. Mohamed Abdulla ◽  
K.P. Abhilash
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Orthorhombic Phase ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Vacuum Thermal Evaporation ◽  
Different Thickness ◽  
Absorption Measurements

Thin films of Bi1.5(Sb2S3)0.5of different thickness were deposited on glass substrate by vacuum thermal evaporation method and annealed at different temperature. The elemental compositions of the films were confirmed by energy dispersive X-ray analysis (EDAX). The prepared films were structurally and morphologically characterized by X-ray diffraction (XRD) and microscopic (SEM & AFM) techniques respectively. It has been confirmed that the films possess polycrystalline nature with orthorhombic phase and the grain size of the films vary from 27.92 to 81.37 nm. The observed bandgap energies (varying from 1.787eV to 1.963 eV) of the films and its temperature dependence were estimated from optical absorption measurements.

scholarly journals Optical and Electrical Properties of Ag-Doped In2S3Thin Films Prepared by Thermal Evaporation

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Peijie Lin ◽  
Sile Lin ◽  
Shuying Cheng ◽  
Jing Ma ◽  
Yunfeng Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Hall Measurement System

Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.

Sign in / Sign up

Export Citation Format

Share Document