scholarly journals Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

2014 ◽  
Vol 2014 ◽  
pp. 1-10 ◽  
Author(s):  
Chin-Yi Tsai ◽  
Chin-Yao Tsai

In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

Energies ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 186 ◽  
Author(s):  
Irene Romero-Fiances ◽  
Emilio Muñoz-Cerón ◽  
Rafael Espinoza-Paredes ◽  
Gustavo Nofuentes ◽  
Juan De la Casa

A knowledge gap exists about the actual behavior of PV grid-connected systems (PVGCS) using various PV technologies in Peru. This paper presents the results of an over three-year-long performance evaluation of a 3.3-kWp monocrystalline silicon (sc-Si) PVGCS located in Arequipa, a 3.3-kWp sc-Si PVGCS located in Tacna, and a 3-kWp policrystalline (mc-Si) PVGCS located in Lima. An assessment of the performance of a 3.5-kWp amorphous silicon/crystalline silicon hetero-junction (a-Si/µc-Si) PVGCS during over one and a half years of being in Lima is also presented. The annual final yields obtained lie within 1770–1992 kWh/kW, 1505–1540 kWh/kW, and 736–833 kWh/kW for Arequipa, Tacna, and Lima, respectively, while the annual PV array energy yield achieved by a-Si/µc-Si is 1338 kWh/kW. The annual performance ratio stays in the vicinity of 0.83 for sc-Si in Arequipa and Tacna while this parameter ranges from 0.70 to 0.77 for mc-Si in Lima. An outstanding DC annual performance ratio of 0.97 is found for a-Si/µc-Si in the latter site. The use of sc-Si and presumably, mc-Si PV modules in desert climates, such as that of Arequipa and Tacna, is encouraged. However, sc-Si and presumably, mc-Si-technologies experience remarkable temperature and low irradiance losses in Lima. By contrast, a-Si/µc-Si PV modules perform much better in the latter site thanks to being less influenced by both temperature and low light levels.


2011 ◽  
Vol 8 (10) ◽  
pp. 2986-2989 ◽  
Author(s):  
Chin-Yao Tsai ◽  
Chin-Yi Tsai

Author(s):  
Zhen-Liang Liao ◽  
Yu-Chun Peng ◽  
Yi-Kai Lin ◽  
Ching-Ying Chang ◽  
Pei-Hua Tsai ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
pp. 141 ◽  
Author(s):  
Slawomir Gulkowski ◽  
Agata Zdyb ◽  
Piotr Dragan

This study presents a comparative analysis of energy production over the year 2015 by the grid connected experimental photovoltaic (PV) system composed by different technology modules, which operates under temperate climate meteorological conditions of Eastern Poland. Two thin film technologies have been taken into account: cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS). Rated power of each system is approximately equal to 3.5 kWp. In addition, the performance of a polycrystalline silicon technology system has been analyzed in order to provide comprehensive comparison of the efficiency of thin film and crystalline technologies in the same environmental conditions. The total size of the pc-Si system is equal to 17 kWp. Adequate sensors have been installed at the location of the PV system to measure solar irradiance and temperature of the modules. In real external conditions all kinds of modules exhibit lower efficiency than the values provided by manufacturers. The study reveals that CIGS technology is characterized by the highest energy production and performance ratio. The observed temperature related losses are of the lowest degree in case of CIGS modules.


2012 ◽  
Vol 1426 ◽  
pp. 15-26 ◽  
Author(s):  
X. Niu ◽  
C. Yu ◽  
M. Wang ◽  
G. Li ◽  
X. Zhu ◽  
...  

ABSTRACTOver the past decade, the PV industry has witnessed tremendous growth in manufacturing scale and technology advancement, with PV generated electricity cost ever approaching grid parity. Among them, Si based thin film technology has made substantial progress in demonstrating its inherent advantages in lower material cost, ease of manufacturing and higher energy yield, etc. More recently, reduced product prices and competing technologies from crystalline silicon and other thin film technologies have made amorphous and microcrystalline silicon based thin film technology very challenging, and requires further increase in module efficiency and decrease in manufacturing cost. As one of the few companies in the world with significant manufacturing capacity for tandem thin film Si PV products, Chint Solar (Astronergy) has been at the forefront of technology development for the mass production of large-scale (Gen. 5, 1.43m2) Si thin film solar modules in the last 5 years. We will review major technology advancements which have been mass production proven and led to the mass produced tandem silicon thin film module with 10.0% plus stabilized efficiency, along with the field performance of those modules.


MRS Bulletin ◽  
2007 ◽  
Vol 32 (3) ◽  
pp. 219-224 ◽  
Author(s):  
Ruud E.I. Schropp ◽  
Reinhard Carius ◽  
Guy Beaucarne

AbstractThin-film solar cell technologies based on Si with a thickness of less than a few micrometers combine the low-cost potential of thin-film technologies with the advantages of Si as an abundantly available element in the earth's crust and a readily manufacturable material for photovoltaics (PVs). In recent years, several technologies have been developed that promise to take the performance of thin-film silicon PVs well beyond that of the currently established amorphous Si PV technology. Thin-film silicon, like no other thin-film material, is very effective in tandem and triple-junction solar cells. The research and development on thin crystalline silicon on foreign substrates can be divided into two different routes: a low-temperature route compatible with standard float glass or even plastic substrates, and a high-temperature route (>600°C). This article reviews the material properties and technological challenges of the different thin-film silicon PV materials.


2015 ◽  
Vol 754-755 ◽  
pp. 481-488
Author(s):  
Bibi Nadia Taib ◽  
Norhayati Sabani ◽  
Chan Buan Fei ◽  
Mazlee Mazalan ◽  
Mohd Azarulsani Md Azidin

Thin film piezoelectric material plays a vital role in micro-electromechanical systems (MEMS), due to its low power requirements and the availability of high energy harvesting. Zinc oxide is selected for piezoelectric material because of its high piezoelectric coupling coefficient, easy to deposit on silicon substrate and excellent adhesion. Deposited ZnO and Al improve the electrical properties, electrical conductivity and thermal stability. The design, fabrication and experimental test of fabricated MEMS piezoelectric cantilever beams operating in d33 mode were presented in this paper. PVD (Physical Vapor Deposition) was selected as the deposition method for aluminium while spincoating was chosen to deposit ZnO thin film. The piezoelectric cantilever beam is arranged with self-developed experimental setup consisting of DC motor and oscilloscope. Based on experimental result, the longer length of piezoelectric cantilever beam produce higher output voltage at oscilloscope. The piezoelectric cantilevers generated output voltages which were from 2.2 mV to 8.8 mV at 50 Hz operation frequency. One of four samples achieved in range of desired output voltage, 1-3 mV and the rest samples produced a higher output voltage. The output voltage is adequate for a very low power wireless sensing nodes as a substitute energy source to classic batteries.


1997 ◽  
Vol 485 ◽  
Author(s):  
B. Jagannathan ◽  
W. A. Anderson

AbstractPlasma deposition of thin silicon films with a variable microstructure and controlled interface formation techniques are being developed for thin film silicon/polycrystalline silicon solar cells. Low hydrogen content amorphous (a-Si) or microcrystalline silicon (μ c-Si) films were obtained by controlling the H2 dilution of 2% SiH4/He in a microwave ECR discharge. The films were characterized for structural and electro-optic properties. Junction creation for solar cells was investigated by depositing single or multilayers of the film silicon onto crystalline silicon (c-Si). Effort to improve carrier transport and photovoltaic (PV) properties was pursued through interface modifications effected by varying the microstructure of the layer in contact with the substrate. Cells with 7% conversion efficiency (No A/R) were obtained for an a-Si/c-Si heterojunction configuration. Improved carrier transport and PV properties (9% ef ficient) were achieved by inserting a thin μ c-Si layer in the above structure.


PLoS ONE ◽  
2020 ◽  
Vol 15 (11) ◽  
pp. e0241927
Author(s):  
Syed Zahurul Islam ◽  
Mohammad Lutfi Othman ◽  
Muhammad Saufi ◽  
Rosli Omar ◽  
Arash Toudeshki ◽  
...  

This study analyzes the performance of two PV modules, amorphous silicon (a-Si) and crystalline silicon (c-Si) and predicts energy yield, which can be seen as facilitation to achieve the target of 35% reduction of greenhouse gases emission by 2030. Malaysia Energy Commission recommends crystalline PV modules for net energy metering (NEM), but the climate regime is a concern for output power and efficiency. Based on rainfall and irradiance data, this study aims to categorize the climate of peninsular Malaysia into rainy and dry seasons; and then the performance of the two modules are evaluated under the dry season. A new mathematical model is developed to predict energy yield and the results are validated through experimental and systematic error analysis. The parameters are collected using a self-developed ZigBeePRO-based wireless system with the rate of 3 samples/min over a period of five days. The results unveil that efficiency is inversely proportional to the irradiance due to negative temperature coefficient for crystalline modules. For this phenomenon, efficiency of c-Si (9.8%) is found always higher than a-Si (3.5%). However, a-Si shows better shadow tolerance compared to c-Si, observed from a lesser decrease rate in efficiency of the former with the increase in irradiance. Due to better spectrum response and temperature coefficient, a-Si shows greater performance on output power efficiency (OPE), performance ratio (PR), and yield factor. From the regression analysis, it is found that the coefficient of determination (R2) is between 0.7179 and 0.9611. The energy from the proposed model indicates that a-Si yields 15.07% higher kWh than c-Si when luminance for recorded days is 70% medium and 30% high. This study is important to determine the highest percentage of energy yield and to get faster NEM payback period, where as of now, there is no such model to indicate seasonal energy yield in Malaysia.


Complexity ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-19
Author(s):  
Muhammad Arif ◽  
Mohsin Shahzad ◽  
Qianmu Li ◽  
Jawad Saleem ◽  
Muhammad Shamrooz Aslam ◽  
...  

The multiport DC-DC power converter is a prominent area of research in power electronics due to its highly dense design, reduced device count, and high energy efficiency. In this paper, a nonisolated single magnetic element-based high step-up three-port converter for an energy storage system is presented. The proposed converter has two input ports and one output port. The coupled inductor with switched capacitor is used to achieve high voltage gain. The key features of the proposed converter are high conversion gain, low voltage stress, zero voltage switching (ZVS), and zero current switching (ZCS). The detailed theoretical analysis and operation of the converter are elaborated. The energy efficiency of the proposed converter is calculated and compared with the other counterparts. Ansys Maxwell is used for the coupled inductor finite element modeling. To verify the applicability and functionality of proposed converter, a 100  W converter with two inputs ( 48  V and 96  V ) and one output 360  V at 100  kHz is tested in the laboratory.


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