High energy yield low-voltage silicon thin-film solar modules

2011 ◽  
Vol 8 (10) ◽  
pp. 2986-2989 ◽  
Author(s):  
Chin-Yao Tsai ◽  
Chin-Yi Tsai
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
High Energy ◽  
Energy Yield ◽  
Silicon Thin Film

Low voltage and high energy yield thin film solar module

2011 ◽  
Author(s):  
Zhen-Liang Liao ◽  
Yu-Chun Peng ◽  
Yi-Kai Lin ◽  
Ching-Ying Chang ◽  
Pei-Hua Tsai ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
High Energy ◽  
Energy Yield ◽  
Solar Module

scholarly journals Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

2014 ◽  
Vol 2014 ◽  
pp. 1-10 ◽  
Author(s):  
Chin-Yi Tsai ◽  
Chin-Yao Tsai
Keyword(s):  
Thin Film ◽  
Output Voltage ◽  
Low Voltage ◽  
Crystalline Silicon ◽  
High Energy ◽  
Photovoltaic System ◽  
Performance Ratio ◽  
Energy Yield ◽  
Microcrystalline Silicon ◽  
Low Light

In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

Progress in Research and Mass Production of Large-Scale Tandem Thin Film Si Solar Modules at Chint Solar

2012 ◽  
Vol 1426 ◽  
pp. 15-26 ◽  
Author(s):  
X. Niu ◽  
C. Yu ◽  
M. Wang ◽  
G. Li ◽  
X. Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Mass Production ◽  
Large Scale ◽  
Crystalline Silicon ◽  
Field Performance ◽  
Energy Yield ◽  
Manufacturing Cost ◽  
Silicon Thin Film ◽  
Electricity Cost ◽  
Thin Film Technology

ABSTRACTOver the past decade, the PV industry has witnessed tremendous growth in manufacturing scale and technology advancement, with PV generated electricity cost ever approaching grid parity. Among them, Si based thin film technology has made substantial progress in demonstrating its inherent advantages in lower material cost, ease of manufacturing and higher energy yield, etc. More recently, reduced product prices and competing technologies from crystalline silicon and other thin film technologies have made amorphous and microcrystalline silicon based thin film technology very challenging, and requires further increase in module efficiency and decrease in manufacturing cost. As one of the few companies in the world with significant manufacturing capacity for tandem thin film Si PV products, Chint Solar (Astronergy) has been at the forefront of technology development for the mass production of large-scale (Gen. 5, 1.43m2) Si thin film solar modules in the last 5 years. We will review major technology advancements which have been mass production proven and led to the mass produced tandem silicon thin film module with 10.0% plus stabilized efficiency, along with the field performance of those modules.

A Novel Device Structure for High Voltage, High Performance Amorphous Silicon Thin-Film Transistors

1996 ◽  
Vol 424 ◽  
Author(s):  
A. M. Miri ◽  
P. S. Gudem ◽  
S. G. Chamberlain ◽  
A. Nathan
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Silicon Thin Film ◽  
Device Structure ◽  
Linear Region ◽  
Output Characteristics ◽  
Voltage Breakdown

AbstractConventional high voltage thin-film transistors (HVTFTs) suffer from performance limitations such as low on-current, Vx, shift and large curvature in the linear region of the output characteristics. These limitations are associated with the highly resistive dead region in conventional HVTFT structures. In this paper, we present a novel TFT structure which has a high on-current, improved output characteristics in the linear region, and no Vx shift. The higher on-current and significant improvement in output characteristics allows faster switching. Elimination of the Vx shift leads to more reliable circuit operation. The new structure is based on the conventional low voltage TFT (LVTFT) structure except that it does not suffer from low-voltage breakdown. The low-voltage breakdown of the gate nitride in conventional LVTFTs is perceived to be due to spiking of the drain metallization into the underlying layers which creates regions of very high electric field. In our novel structure, a higher breakdown is achieved by locating the metal contacts away from the gate edge while keeping the necessary drain to gate overlap through a heavily doped microcrystalline layer. Therefore, the new TFT extends the same performance as LVTFTs to high voltage operation. Furthermore, this structure also enhances the yield and reliability by minimizing the common faults in TFTs such as short circuits between gate, source and drain.

Tribology of silicon-thin-film-coated SiC ceramics and the effects of high energy ion irradiation

Wear ◽  
1990 ◽  
Vol 140 (2) ◽  
pp. 251-261 ◽  
Author(s):  
Masao Kohzaki ◽  
Shoji Noda ◽  
Haruo Doi
Keyword(s):  
Thin Film ◽  
Ion Irradiation ◽  
High Energy ◽  
Silicon Thin Film ◽  
Sic Ceramics

A Novel Device Structure for High Voltage, High Performance Amorphous Silicon Thin-Film Transistors

1996 ◽  
Vol 420 ◽  
Author(s):  
A. M. Miri ◽  
P. S. Gudem ◽  
S. G. Chamberlain ◽  
A. Nathan
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Silicon Thin Film ◽  
Device Structure ◽  
Linear Region ◽  
Output Characteristics ◽  
Voltage Breakdown

AbstractConventional high voltage thin-film transistors (HVTFTs) suffer from performance limitations such as low on-current, Vx. shift and large curvature in the linear region of the output characteristics. These limitations are associated with the highly resistive dead region in conventional HVTFT structures. In this paper, we present a novel TFT structure which has a high on-current, improved output characteristics in the linear region, and no Vx, shift. The higher on-current and significant improvement in output characteristics allows faster switching. Elimination of the Vx shift leads to more reliable circuit operation. The new structure is based on the conventional low voltage TFT (LVTFT) structure except that it does not suffer from low-voltage breakdown. The low-voltage breakdown of the gate nitride in conventional LVTFTs is perceived to be due to spiking of the drain metallization into the underlying layers which creates regions of very high electric field. In our novel structure, a higher breakdown is achieved by locating the metal contacts away from the gate edge while keeping the necessary drain to gate overlap through a heavily doped microcrystalline layer. Therefore, the new TFT extends the same performance as LVTFTs to high voltage operation. Furthermore, this structure also enhances the yield and reliability by minimizing the common faults in TFTs such as short circuits between gate, source and drain.

Low-Voltage Operating Triode-Type Field Emission Displays Controlled by Amorphous–Silicon Thin-Film Transistors

2002 ◽  
Vol 41 (Part 1, No. 9) ◽  
pp. 5745-5748 ◽  
Author(s):  
Young-Rae Cho ◽  
Chi-Sun Hwang ◽  
Yoon-Ho Song ◽  
Seong-Deok Ahn ◽  
Choong-Heui Chung ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Field Emission ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Silicon Thin Film ◽  
Field Emission Displays

scholarly journals Damage and recovery induced by a high energy e-beam in a silicon nanofilm

RSC Advances ◽  
2017 ◽  
Vol 7 (59) ◽  
pp. 37032-37038 ◽  
Author(s):  
Xianlin Qu ◽  
Qingsong Deng
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
High Energy ◽  
Silicon Thin Film ◽  
Transmission Electron

Herein, electron beam-induced damage and recovery of a silicon thin film was investigatedin situ viatransmission electron microscopy (TEM).

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