scholarly journals Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111) Si Substrate: The Effect of Film Thickness

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Cheng-Chang Yu ◽  
Wen-How Lan ◽  
Kai-Feng Huang
Keyword(s):  
Activation Energy ◽  
Zinc Oxide ◽  
Film Thickness ◽  
Spray Pyrolysis ◽  
Hole Concentration ◽  
Hall Effect Measurement ◽  
Oxide Thin Film ◽  
Si Substrate ◽  
P Type ◽  
Type Conduction

Indium-nitrogen codoped zinc oxide (INZO) thin films were fabricated by spray pyrolysis deposition technique on n-(111) Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002) to (101) as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1and hole concentration around3×1019 cm−3can be achieved with film thickness less than 385 nm. The n-type conduction with concentration1×1020 cm−3is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

Structure, Optical, Temperature Dependent Electrical Properties of P-Type Conduction in N–Al Codoped Zn1-XMgXO Films by Ultrasonic Spray Pyrolysis

2011 ◽  
Vol 217-218 ◽  
pp. 1708-1715
Author(s):  
Xia Zhang ◽  
Qiu Hui Liao ◽  
Hong Chen ◽  
Zhi Yan ◽  
Zhi Shui Yu
Keyword(s):  
Hall Effect ◽  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Temperature Dependent ◽  
Sem Images ◽  
Ultrasonic Spray ◽  
P Type ◽  
Type Conduction

Four series of thin films have been deposited as the precursory sources of Zn(CH3COO)2, Mg(CH3COO)2, NH4CH3COO and AlCl3 aqueous solutions using ultrasonic spray pyrolysis (USP) method. The crystalline structure, morphology images, electrical, optical properties of the films are characterized by x-ray diffraction (XRD), field emission-scan electron image (FE-SEM), Hall-effect measurement and photoluminescence (PL). From the XRD patterns and SEM images, we can see that all the films present good crystallinity and surface uniformity. Hall-effect measurement results indicate that ZnO is n-type, while N-Al codoped ZnO and N-Al codoped Zn1-xMgxO exhibit p-type conduction. Temperature dependent of electrical measurement is carried out from 300K to 500K, then the conductive mechanism and carriers scattering are analysed. Furthermore, the photoluminescence peak of Zn1-xMgxO is tuned into shorten wavelength than pure ZnO (λ＝379－352＝27nm), and also the same phenomenon of the p-type Zn1-xMgxO film exhibits blue-shifted behavior from 378nm to 356nm compared with p-type ZnO film (λ＝378－356＝21nm). In other word, the p-type Zn1-xMgxO film shifts to a shorter wavelength of 356 nm while maintaining excellent electrical performances.

scholarly journals Zinc Oxide Thin-Film Transistors Fabricated at Low Temperature by Chemical Spray Pyrolysis

2014 ◽  
Vol 43 (11) ◽  
pp. 4241-4245 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Yong Uk Lee ◽  
Lee Winchester ◽  
Jaeeun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Spray Pyrolysis ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Chemical Spray Pyrolysis ◽  
Zinc Oxide Thin Film ◽  
Chemical Spray

scholarly journals Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

2014 ◽  
Vol 5 ◽  
pp. 2216-2221 ◽  
Author(s):  
Vinay Kabra ◽  
Lubna Aamir ◽  
M M Malik
Keyword(s):  
Zno Nanoparticles ◽  
Low Cost ◽  
Electrical Characterization ◽  
Hall Effect Measurement ◽  
Dip Coating ◽  
Si Substrate ◽  
Electronic Circuitry ◽  
Uv Illumination ◽  
P Type ◽  
Dip Coating Technique

A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

Phosphorus-Doped p-Type ZnS Nanowires and their Photodetecting Applications Based on Device Construction

2016 ◽  
Vol 42 ◽  
pp. 65-72 ◽  
Author(s):  
Xi Wei Zhang ◽  
Dan Hu ◽  
Dan Meng ◽  
Zhen Jie Tang ◽  
Zhi Wang
Keyword(s):  
High Performance ◽  
Uv Light ◽  
Hole Concentration ◽  
Chemical Deposition ◽  
Core Shell ◽  
Light Illumination ◽  
Chemical Deposition Method ◽  
P Type ◽  
Phosphorus Doped ◽  
Type Conduction

Phosphorus-doped p-type ZnS NWs were synthesized by chemical deposition method. The as-synthesized NWs shows obvious p-type conduction with a hole concentration of 8.35 × 1017 cm-3. ZnS-Si core-shell nanoheterojunction was fabricated by depositing Si thin film on the surface of ZnS NWs through a sputtering method. The core-shell nanostructure exhibited excellent photoresponse to white light and UV light. Under UV light illumination, a high performance with a responsibility of ~ 0.14 × 103 AW-1, a gain of ~ 0.69 × 103 and a detectivity of ~ 1.2 × 1010 cmHz1/2W-1 were obtained based on the ZnS-Si core-shell nanoheterojunction. This new nanostructure is expected to play an important role in the next-generation optoelectronic devices.

Obtainable P-Type ZnO Film Doped with Li by Sol-Gel Method

2015 ◽  
Vol 734 ◽  
pp. 796-801 ◽  
Author(s):  
Ting Ting Wang ◽  
Miao Miao Dai ◽  
Ya Jun Yan ◽  
Hong Zhang ◽  
Yi Min Yu
Keyword(s):  
Hole Concentration ◽  
Sol Gel ◽  
Green Emission ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Zno Film ◽  
Oriented Growth ◽  
Coating Method ◽  
Thermal Annealing Process ◽  
P Type

A series of Li-doped zinc oxide ( ZnO ) thin films were deposited on quartz glass by sol-gel and spin coating method. Their p-type conductivities could be achieved by subsequently thermal annealing process, which were characterized by Hall effect measurement. An optimized result with resistivity of 46.8 Ω cm, Hall mobility of 1.35 cm2/V s, and hole concentration of 9.89×1016 cm-3 was achieved at the annealing temperature of 700 °C. The films exhibited highly (002) oriented growth in all the cases. Strong green emission centered at 510 nm was observed by photoluminescence spectra in Li-doped ZnO films at room temperature.

Zinc Oxide Thin Films with Reduced Native Compensative Defects Grown by Ultrasonic Spray Pyrolysis at Atmosphere

2007 ◽  
Vol 336-338 ◽  
pp. 589-592
Author(s):  
Jian Ling Zhao ◽  
Xiao Min Li ◽  
Ji Ming Bian ◽  
Wei Dong Yu ◽  
C.Y. Zhang
Keyword(s):  
Spray Pyrolysis ◽  
Deep Level ◽  
Hole Concentration ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Near Band Edge ◽  
Dense Microstructure ◽  
Ultrasonic Spray ◽  
High Hole Concentration ◽  
P Type

ZnO films were deposited on Si (100) substrate by ultrasonic spray pyrolysis at atmosphere. The film grown at optimum conditions is well crystallized with uniform, smooth and dense microstructure. Photoluminescence measurement shows a strong near band edge UV emission at 379nm and an almost undetectable deep-level emission band centered at 502nm. The resistivity of ZnO film is reduced by an order after N-In codoping, which produces p-type conduction with high hole concentration and hall mobility.

p-type conduction in wide-gap Zn1−xMgxO films grown by ultrasonic spray pyrolysis

2005 ◽  
Vol 87 (9) ◽  
pp. 092101 ◽  
Author(s):  
X. Zhang ◽  
X. M. Li ◽  
T. L. Chen ◽  
C. Y. Zhang ◽  
W. D. Yu
Keyword(s):  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Ultrasonic Spray ◽  
Wide Gap ◽  
P Type ◽  
Type Conduction

scholarly journals Role of Structure and Composition on the Performances of p-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

2019 ◽  
Author(s):  
Raquel Barros ◽  
Kachirayil J. Saji ◽  
João C. Waerenborgh ◽  
Pedro Barquinha ◽  
Luis Pereira ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Spectroscopic Studies ◽  
Oxide Thin Film ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

This work reports the role of structure and composition on the determination of the performances of p-type SnOx TFTs deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (Opp), between 0% and 20%, but where the p-type conduction was only observed between 2.8–3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies. The study allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used that lead to the production of TFTs with a bottom gate configuration, on glasses coated with conductive Indium Tin Oxide, followed by Aluminium Titanium Oxide dielectric layer with saturation mobility of 4.6 cm2V−1s−1 and on-off ratio above 7 × 104, operating at the enhancement mode with a saturation voltage of −10 V.

Recent Developments in Doping Techniques for Compound Semiconductors

1993 ◽  
Vol 325 ◽  
Author(s):  
J. E. Cunningham ◽  
W. T. Tsang
Keyword(s):  
Activation Energy ◽  
Hole Concentration ◽  
Compound Semiconductors ◽  
Solubility Limit ◽  
Band Offset ◽  
New Methods ◽  
In Doping ◽  
Recent Developments ◽  
P Type ◽  
First Time

AbstractWe report new methods to dope compound semiconductors. First, we demonstrate the concept of doping engineering whereby it becomes possible to tailor the activation energy of the dopant in a host semiconductor for the first time. In this application, the band offset of a thin, sacrificial semiconductor is used to lower the activation energy of the dopant below its value in the host semiconductor. This allows the freedom to control dopant activity in ways not accessible to a uniformly placed dopant. We chose δ-Be-AlGaAs/GaAs as a model example and show the hole binding energy is reduced by a factor of five. Secondly, we demonstrate overcoming the p-type solubility limit in GaAs by use of monolayer δ-Be in a GaAs base of an HBT. Here, an effective hole concentration of > 1021cm−3 is measured in real devices. We present a qualatative view of doping solubility limitations that are controlled by surface processes.

On The Electronic Contribution to Elastic Constants of Ultrathin Films of P-Type Si

1991 ◽  
Vol 226 ◽  
Author(s):  
Kamaxhya P Ghatak ◽  
Badal De
Keyword(s):  
Film Thickness ◽  
Experimental Method ◽  
Elastic Constants ◽  
Ultrathin Films ◽  
Hole Concentration ◽  
Electronic Contribution ◽  
Third Order ◽  
Theoretical Formulation ◽  
Third Order Elastic Constants ◽  
P Type

AbstractIn this paper we have formulated the electronic contribution to the elastic constants in ultrathin films of p-Si by considering the influences of heavy, light and split-off holes respectively. We have suggested an experimental method of determining the same in degenerate materials having arbitrary dispersion laws. The elastic constants increase with increasing hole concentration in an oscillatory way and decrease with increasing film thickness. The theoretical formulation is in agreement with the suggested experimental method of determining second and third order elastic constants.

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