p-type conduction in wide-gap Zn1−xMgxO films grown by ultrasonic spray pyrolysis

2005 ◽  
Vol 87 (9) ◽  
pp. 092101 ◽  
Author(s):  
X. Zhang ◽  
X. M. Li ◽  
T. L. Chen ◽  
C. Y. Zhang ◽  
W. D. Yu
Keyword(s):  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Ultrasonic Spray ◽  
Wide Gap ◽  
P Type ◽  
Type Conduction

Structure, Optical, Temperature Dependent Electrical Properties of P-Type Conduction in N–Al Codoped Zn1-XMgXO Films by Ultrasonic Spray Pyrolysis

2011 ◽  
Vol 217-218 ◽  
pp. 1708-1715
Author(s):  
Xia Zhang ◽  
Qiu Hui Liao ◽  
Hong Chen ◽  
Zhi Yan ◽  
Zhi Shui Yu
Keyword(s):  
Hall Effect ◽  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Temperature Dependent ◽  
Sem Images ◽  
Ultrasonic Spray ◽  
P Type ◽  
Type Conduction

Four series of thin films have been deposited as the precursory sources of Zn(CH3COO)2, Mg(CH3COO)2, NH4CH3COO and AlCl3 aqueous solutions using ultrasonic spray pyrolysis (USP) method. The crystalline structure, morphology images, electrical, optical properties of the films are characterized by x-ray diffraction (XRD), field emission-scan electron image (FE-SEM), Hall-effect measurement and photoluminescence (PL). From the XRD patterns and SEM images, we can see that all the films present good crystallinity and surface uniformity. Hall-effect measurement results indicate that ZnO is n-type, while N-Al codoped ZnO and N-Al codoped Zn1-xMgxO exhibit p-type conduction. Temperature dependent of electrical measurement is carried out from 300K to 500K, then the conductive mechanism and carriers scattering are analysed. Furthermore, the photoluminescence peak of Zn1-xMgxO is tuned into shorten wavelength than pure ZnO (λ＝379－352＝27nm), and also the same phenomenon of the p-type Zn1-xMgxO film exhibits blue-shifted behavior from 378nm to 356nm compared with p-type ZnO film (λ＝378－356＝21nm). In other word, the p-type Zn1-xMgxO film shifts to a shorter wavelength of 356 nm while maintaining excellent electrical performances.

Enhanced p-Type ZnO Films through Nitrogen and Argentum Codoping Grown by Ultrasonic Spray Pyrolysis

2008 ◽  
Vol 25 (9) ◽  
pp. 3400-3402 ◽  
Author(s):  
Wang Jing-Wei ◽  
Bian Ji-Ming ◽  
Liang Hong-Wei ◽  
Sun Jing-Chang ◽  
Zhao Jian-Ze ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Ultrasonic Spray ◽  
P Type

Study on anomalous high p-type conductivity in ZnO films on silicon substrate prepared by ultrasonic spray pyrolysis

2007 ◽  
Vol 90 (6) ◽  
pp. 062118 ◽  
Author(s):  
Jun-Liang Zhao ◽  
Xiao-Min Li ◽  
André Krtschil ◽  
Alois Krost ◽  
Wei-Dong Yu ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Silicon Substrate ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Type Conductivity ◽  
Ultrasonic Spray ◽  
P Type

Zinc Oxide Thin Films with Reduced Native Compensative Defects Grown by Ultrasonic Spray Pyrolysis at Atmosphere

2007 ◽  
Vol 336-338 ◽  
pp. 589-592
Author(s):  
Jian Ling Zhao ◽  
Xiao Min Li ◽  
Ji Ming Bian ◽  
Wei Dong Yu ◽  
C.Y. Zhang
Keyword(s):  
Spray Pyrolysis ◽  
Deep Level ◽  
Hole Concentration ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Near Band Edge ◽  
Dense Microstructure ◽  
Ultrasonic Spray ◽  
High Hole Concentration ◽  
P Type

ZnO films were deposited on Si (100) substrate by ultrasonic spray pyrolysis at atmosphere. The film grown at optimum conditions is well crystallized with uniform, smooth and dense microstructure. Photoluminescence measurement shows a strong near band edge UV emission at 379nm and an almost undetectable deep-level emission band centered at 502nm. The resistivity of ZnO film is reduced by an order after N-In codoping, which produces p-type conduction with high hole concentration and hall mobility.

The grain boundary related p-type conductivity in ZnO films prepared by ultrasonic spray pyrolysis

2009 ◽  
Vol 94 (19) ◽  
pp. 192101 ◽  
Author(s):  
Bin Wang ◽  
Jiahua Min ◽  
Yue Zhao ◽  
Wenbin Sang ◽  
Changjun Wang
Keyword(s):  
Grain Boundary ◽  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Type Conductivity ◽  
Ultrasonic Spray ◽  
P Type

Characterization of Ag Doped P-Type ZnO Thin Films Prepared by Electrostatic-Enhanced Ultrasonic Spray Pyrolysis

2011 ◽  
Vol 299-300 ◽  
pp. 436-439 ◽  
Author(s):  
Jia Hua Min ◽  
Xiao Yan Liang ◽  
Bin Wang ◽  
Yue Zhao ◽  
Yun Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Optical Transmittance ◽  
Nano Particles ◽  
Zno Thin Films ◽  
Ultrasonic Spray ◽  
P Type ◽  
O Phase

In this paper, the structure, electrical and optical properties and stabilities of Ag doped p-type ZnO thin films, prepared by electrostatic-enhanced ultrasonic spray pyrolysis were investigated. XRD and Hall data analyses indicated that the resistivity of 4at. % Ag doped p-type ZnO was low, without Ag2O phase separation. The optical transmission spectra illustrated that optical band gaps decreases with the gradual increase of Ag dopant. Moreover, ZnO: Ag films placed for 10 days still showed p-type, but the optical transmittance decreased, suggesting that AgZn in the ZnO: Ag thin films captured electrons to generate Agi, which reunited to be Ag nano-particles and decreased the optical transmittance of ZnO: Ag.

scholarly journals Structural and Photoelectrochemical Properties of Cu-Doped CdS Thin Films Prepared by Ultrasonic Spray Pyrolysis

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Rui Xie ◽  
Jinzhan Su ◽  
Mingtao Li ◽  
Liejin Guo
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Indium Tin Oxide ◽  
Ultrasonic Spray Pyrolysis ◽  
Annealing Treatment ◽  
Cost Effective ◽  
Photoelectrochemical Properties ◽  
Ultrasonic Spray ◽  
Cds Thin Films ◽  
P Type

Cu-doped CdS thin films of variable doping levels have been deposited on indium tin oxide-coated glass substrate by simple and cost-effective ultrasonic spray pyrolysis. The influences of doping concentration and annealing treatment on the structure and photoelectrochemical properties of the films were investigated. The deposited films were characterized by XRD, SEM, and UV-Vis spectra. Moreover, the films were investigated by electrochemical and photoelectrochemical measurements with regard to splitting water for solar energy conversion. The results showed that the Cu impurity can cause a structural change and red shift of absorption edge. It was found that the photocurrent can be improved by the Cu-doping process for the unannealed films under the weak illumination. The unannealed 5 at.% Cu-doped sample obtained the maximum IPCE, which achieved about 45% at 0.3 V versus SCE potential under 420 nm wavelength photoirradiation. In addition, the p-type CdS was formed with a doping of 4 at.%~10 at.% Cu after 450°C 2 h annealed in vacuum.

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