scholarly journals AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
P. C. Chang ◽  
K. H. Lee ◽  
Z. H. Wang ◽  
S. J. Chang
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Electron Mobility ◽  
Defect Density ◽  
High Electron Mobility Transistors ◽  
Crystalline Quality ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Buffer Design

We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

Study of surface leakage current of AlGaN/GaN high electron mobility transistors

2014 ◽  
Vol 104 (15) ◽  
pp. 153509 ◽  
Author(s):  
YongHe Chen ◽  
Kai Zhang ◽  
MengYi Cao ◽  
ShengLei Zhao ◽  
JinCheng Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Surface Leakage Current ◽  
Electron Mobility Transistors ◽  
Surface Leakage
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