scholarly journals Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors

2020 ◽  
Vol 116 (22) ◽  
pp. 222101
Author(s):  
Jiejie Zhu ◽  
Yingcong Zhang ◽  
Michael J. Uren ◽  
Siyu Liu ◽  
Pengfei Wang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Variable Range Hopping ◽  
High Electron Mobility ◽  
Variable Range ◽  
Hopping Mechanism ◽  
Electron Mobility Transistors

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

Study of surface leakage current of AlGaN/GaN high electron mobility transistors

2014 ◽  
Vol 104 (15) ◽  
pp. 153509 ◽  
Author(s):  
YongHe Chen ◽  
Kai Zhang ◽  
MengYi Cao ◽  
ShengLei Zhao ◽  
JinCheng Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Surface Leakage Current ◽  
Electron Mobility Transistors ◽  
Surface Leakage

Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

2013 ◽  
Vol 412 ◽  
pp. 126-129 ◽  
Author(s):  
Salah Saadaoui ◽  
Mohamed Mongi Ben Salem ◽  
Olfa Fathallah ◽  
Malek Gassoumi ◽  
Christophe Gaquière ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Deep Traps
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