Analytical noise model with the influence of shot noise induced by the gate leakage current for submicrometer gate-length high-electron-mobility transistors

1997 ◽  
Vol 44 (11) ◽  
pp. 1883-1887 ◽  
Author(s):  
Doo-Sik Shin ◽  
J.B. Lee ◽  
Hong Shick Min ◽  
Jae-Eung Oh ◽  
Young June Park ◽  
...  
Keyword(s):  
Leakage Current ◽  
Shot Noise ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Noise Model ◽  
Gate Length ◽  
High Electron ◽  
Gate Leakage Current ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors

2002 ◽  
Vol 41 (Part 1, No. 8) ◽  
pp. 5125-5126 ◽  
Author(s):  
Shinya Mizuno ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Koichi Maezawa ◽  
Takashi Mizutani
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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