scholarly journals Effect of C/Si Ratio on the Electrochemical Behavior of a-SiCx:H Coatings on SS301 Substrate Deposited by PECVD

2014 ◽  
Vol 2014 ◽  
pp. 1-8
Author(s):  
D. Li ◽  
S. Guruvenket ◽  
J. A. Szpunar ◽  
J. E. Klemberg-Sapieha
Keyword(s):  
Stainless Steel ◽  
Electrochemical Behavior ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Corrosion Current ◽  
Amorphous Structure ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Afm Analysis

Amorphous hydrogenated silicon carbide (a-SiCx:H) coatings were deposited on stainless steel 301 (SS301) using plasma enhanced chemical vapor deposition with the methane gas flow ranging from 30 to 90 sccm. XRD spectra confirmed the amorphous structure of these coatings. The as-deposited coatings all exhibited homogenous dense feature, and no porosities were observed in SEM and AFM analysis. The a-SiCx:H coatings remarkably increased the corrosion resistance of the SS301 substrate. With the increase of the C concentration, the a-SiCx:H coatings exhibited significantly enhanced electrochemical behavior. The a-SiCx:H coating with the highest carbon concentration acted as an excellent barrier to charge transfer, with a corrosion current of3.5×10-12 A/cm2and a breakdown voltage of 1.36 V, compared to2.5×10-8 A/cm2and 0.34 V for the SS301 substrate.

Microstructural Characterization of 316L-Type Stainless Steel Exposed to SiFX Species in Argon Atmosphere

2009 ◽  
Vol 1242 ◽  
Author(s):  
E. Gamón ◽  
M. I. Pech-Canul ◽  
J. López-Cuevas ◽  
A. L. Leal-Cruz ◽  
M. A. Pech-Canul
Keyword(s):  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Reaction Chamber ◽  
Argon Atmosphere ◽  
Processing Temperature ◽  
Type Stainless Steel

ABSTRACTNowadays, Si3N4 coatings are used to increase the hardness of 316L-type stainless steel for a wide variety of applications. These coatings are normally prepared by chemical vapor deposition (CVD) or variant techniques such as the hybrid solid-gas precursor system chemical vapor deposition (HYSYCVD), where Na2SiF6 is used as a solid precursor. Within the reaction chamber the Si-F gas species interact with nitrogen precursors to form Si3N4; however, during silicon nitride formation there is always certain amount of residual Si-F gas species which may affect the integrity of the steel surface. Therefore, in this work the effect of the Si-F species on the surface of 316L type stainless steel under argon atmosphere has been investigated. Stainless steel samples were prepared under two surface conditions (abraded and mirror polished), and were exposed to Si-F species considering various parameters such as: argon gas flow rate equal to 10 cm3/min, different temperatures (300, 500, 700, 900°C), and three exposure times (30, 60, 90 minutes). After exposure, the substrates were characterized by X-ray diffraction (XRD) and by scanning electron microscopy (SEM). The results show that the FeF2 phase is formed at low temperatures while the formation of different oxides is directly related to the processing temperature. What is more, these oxides are also strongly influenced by processing time; however temperature is the parameter that most significantly influences the oxides formation.

Amorphous Hydrogenated Silicon Films for Solar Cell Application Obtained with 55 kHz Plasma Enhanced Chemical Vapor Deposition

1998 ◽  
Vol 145 (7) ◽  
pp. 2508-2512 ◽  
Author(s):  
B. G. Budaguan ◽  
A. A. Sherchenkov ◽  
D. A. Stryahilev ◽  
A. Y. Sazonov ◽  
A. G. Radosel'sky ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Solar Cell Application ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

Low defect density amorphous hydrogenated silicon prepared by homogeneous chemical vapor deposition

1982 ◽  
Vol 40 (11) ◽  
pp. 973-975 ◽  
Author(s):  
B. A. Scott ◽  
J. A. Reimer ◽  
R. M. Plecenik ◽  
E. E. Simonyi ◽  
W. Reuter
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Defect Density ◽  
Chemical Vapor ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Homogeneous Chemical
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