scholarly journals Improved Ferroelectric and Leakage Properties of Ce Doped in BiFeO3Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Alima Bai ◽  
Shifeng Zhao ◽  
Jieyu Chen
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Perovskite Structure ◽  
Ferroelectric Properties ◽  
Rare Metal ◽  
Orthorhombic Symmetry ◽  
Phase Structures ◽  
Multiferroic Bifeo ◽  
Symmetry Structure ◽  
Rhombohedral Symmetry

Ce doped BiFeO3thin films with a perovskite structure were prepared using solution-gelation method. It shows that the ferroelectric properties have been enhanced after doping Ce. The enhanced ferroelectric properties are attributed to the structural transformation and the reduced leakage current after doping rare metal of Ce. It has been found that the phase structures of the films transfer from rhombohedral symmetry structure to the coexistence of the tetragonal and orthorhombic symmetry structure. And Fe2+ions have been reduced, which leads to the decreased leakage for Ce doped BiFeO3thin films. The present work can provide an available way to improve the ferroelectric and leakage properties for multiferroic BiFeO3based thin films.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9)2O9 thin films

2004 ◽  
Vol 96 (4) ◽  
pp. 2181-2185 ◽  
Author(s):  
S. Ezhilvalavan ◽  
Victor Samper ◽  
Toh Wei Seng ◽  
Xue Junmin ◽  
John Wang
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Current Characteristics

SYSTEMATIC EXPLORATION OF THE EFFECTS OF CR-DOPING ON MICROSTRUCTURE, INSULATING, AND FERROELECTRIC PROPERTIES OF BiFeO3 THIN FILM

2019 ◽  
Vol 26 (03) ◽  
pp. 1850166 ◽  
Author(s):  
HUITING SUI ◽  
HUAJUN SUN ◽  
XIAOFANG LIU ◽  
SHANSHAN GUO ◽  
HUAN YANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Remanent Polarization ◽  
Fatigue Behavior ◽  
Ferroelectric Properties ◽  
Ohmic Conduction ◽  
Si Substrate ◽  
Systematic Exploration ◽  
Cr Doping

BiFe[Formula: see text]CrxO3 ([Formula: see text]BFCO, [Formula: see text], 0.02, 0.03, 0.04, 0.05) thin films were successfully fabricated onto Pt(111)/TiO2/SiO2/Si substrate via a solgel process. The correlation between microstructure and insulating, ferroelectric properties of [Formula: see text]BFCO thin films are investigated. The leakage behavior for all the thin films is in accordance with the Ohmic conduction and FN Tunneling emission during low and high electric field region, respectively. Compared with the pure BFO, all the thin films with Cr[Formula: see text] doping possess reduced leakage current density by 1–2 orders of magnitude, with the lowest value approximately 10[Formula: see text] at 200[Formula: see text]kV/cm. Moreover, the 0.04BFCO thin film exhibits the maximum remanent polarization ([Formula: see text]) value of 29.8[Formula: see text][Formula: see text]C/cm2 with a great fatigue behavior, which could be ascribed to the absence of impurity phase and reduced leakage current.

The effect of excess bismuth on the ferroelectric properties of SrBi2Ta2O9 thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1569-1575 ◽  
Author(s):  
Tze-Chiun Chen ◽  
Tingkai Li ◽  
Xubai Zhang ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Grain Size ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Substantial Improvement ◽  
Second Phase ◽  
Limited Solid Solution ◽  
Low Leakage ◽  
Ferroelectric Hysteresis

The effect of excess bismuth on the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films having a perovskite-like layered structure was investigated for excess bismuth contents ranging from 0% to 100%. For the first time, a limited solid solution of SBT and Bi2O3 was shown to exist when the amount of excess Bi was less than 50%. The formation of a solid solution enhanced the grain size and a-b plane orientation of the films, resulting in substantial improvement in the ferroelectric hysteresis properties of the films. On the other hand, when the amount of excess Bi exceeded 50%, Bi2O3 appeared as a second phase which led to high leakage current and poor ferroelectric hysteresis curves. 30–50% excess Bi content was found to be the optimum composition with respect to grain size, crystallographic orientation, and single phase formation. Within this range, SBT films exhibit low leakage current density (˜10−9 A/cm2) and maximum remanent polarization (2Pr ˜12 µC/cm2).

Effect of zirconium doping on ferroelectric properties and leakage-current mechanism in Bi3.25 La0.75 Ti3 O12 (BLT) thin films

2010 ◽  
Vol 248 (4) ◽  
pp. 1010-1017 ◽  
Author(s):  
Prikshit Gautam ◽  
Sudipta Bhattacharyya ◽  
Sushil K. Singh ◽  
Ravi Kumar ◽  
Ram Pal Tandon
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Zirconium Doping ◽  
Leakage Current Mechanism ◽  
Current Mechanism
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