Room temperature ferroelectric properties and leakage current characterics of Bi2 FeMnO6 /SrTiO3 bilayered thin films by chemical solution deposition

2014 ◽  
Vol 211 (7) ◽  
pp. 1499-1502 ◽  
Author(s):  
L. M. Shen ◽  
X. G. Tang ◽  
Q. X. Liu ◽  
Y. P. Jiang ◽  
Y. G. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition

Ferroelectric Properties Improvement of Mn-Doped 0.7BiFeO3-0.3BaTiO3 Thin Films Fabricated by Chemical Solution Deposition

2013 ◽  
Vol 566 ◽  
pp. 159-162
Author(s):  
Yuya Ito ◽  
Makoto Moriya ◽  
Wataru Sakamoto ◽  
Toshinobu Yogo
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Electric Fields ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Homogeneous Surface

Ferroelectric 0.7BiFeO3-0.3BaTiO3 and 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films were prepared by the chemical solution deposition. Perovskite single-phase thin films with homogeneous surface morphology were successfully fabricated at 700°C on Pt/TiOx/SiO2/Si substrates. Although typical polarization (P)-electric field (E) hysteresis loops were observed for 0.7BiFeO3-0.3BaTiO3 thin films, their insulation resistance was relatively low at room temperature. Mn doping for Fe site of the 0.7BiFeO3-0.3BaTiO3 was very effective in improving leakage current properties. In 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films, the abrupt increase in leakage current was suppressed even at high electric fields, leading to the well-shaped P-E hysteresis loops at ambient temperatures. Remanent polarization and coercive field of the 0.7Bi (Fe0.95Mn0.05)O3-0.3Bi0.5Na0.5TiO3 films at room temperature were approximately 26 μC/cm2 and 130 kV/cm, respectively.

Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

2015 ◽  
Vol 3 (3) ◽  
pp. 582-595 ◽  
Author(s):  
Qi Zhang ◽  
Nagarajan Valanoor ◽  
Owen Standard
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Critical Role ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

The critical role of gelation is demonstrated in order to achieve epitaxial (001)-BFO thin films with robust room-temperature ferroelectric properties.

Effect of 3d Transition Metals Addition on the Ferroelectric Properties in Bi Ferrite Thin Films

2007 ◽  
Vol 1034 ◽  
Author(s):  
Hiroshi Naganuma ◽  
Jun Miura ◽  
Soichiro Okamura
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Leakage Current ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Diffraction Peaks ◽  
Ferrite Thin Films ◽  
Co Addition

AbstractCr, Mn, Co, Ni and Cu of 5 at % s added BiFeO3 films were fabricated by chemical solution deposition on 111-textured Pt/Ti/SiO2/Si(100) substrates. Only the diffraction peaks attributed to BiFeO3 structure could obtain except the Ni and Cr additions. The BiFeO3 films became almost amorphous by adding Ni, and non ferroelectric Bi7CrO12.5 phase was formed by adding Cr. AFM images indicated the surface morphology of the films was drastically changed by the additives. The leakage current was reduced by adding Mn, Cu and Co, although the electric coercive field increased in the case of Co addition. Therefore, it could be concluded that Mn and Cu additives improved not only the leakage current properties but also the ferroelectric properties in the course of CSD process. It should be noted that this is the first report showing the improvement of ferroelectricity of BiFeO3 films by adding Cu.

Synthesis and Properties of Mn-Doped (Bi0.5Na0.5)TiO3 Thin Films by Chemical Solution Deposition

2013 ◽  
Vol 582 ◽  
pp. 59-62 ◽  
Author(s):  
Narimichi Makino ◽  
Bong Yeon Lee ◽  
Makoto Moriya ◽  
Wataru Sakamoto ◽  
Takashi Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Mn Doped

Lead-free ferroelectric (Bi0.5Na0.5)TiO3(BNT) thin films were prepared by chemical solution deposition. BNT and Mn-doped BNT precursor thin films crystallized in the perovskite single phase at 700 °C on Pt/TiOx/SiO2/Si substrates. The leakage current density of the perovskite BNT films, especially in the high applied field region, was reduced by doping with a small amount of Mn. Also, Mn doping markedly improved the ferroelectric properties of the films. 0.5 and 1.0 mol% Mn-doped BNT thin films exhibited well-shaped ferroelectric polarization (P) electric field (E) hysteresis loops at room temperature. Furthermore, the 1 mol% Mn-doped BNT films showed a typical field-induced strain loop, and the effectived33values were estimated to be about 60 pm/V.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Materials ◽  
Processing Temperature ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

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