Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9)2O9 thin films

2004 ◽  
Vol 96 (4) ◽  
pp. 2181-2185 ◽  
Author(s):  
S. Ezhilvalavan ◽  
Victor Samper ◽  
Toh Wei Seng ◽  
Xue Junmin ◽  
John Wang
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Current Characteristics

Ferroelectric and Dielectric Characteristics of Bi3.25La0.75Ti3O12 Thin Films Prepared by the Polymeric Precursor Method

2006 ◽  
Vol 514-516 ◽  
pp. 212-215 ◽  
Author(s):  
A.Z. Simões ◽  
M.A. Ramírez ◽  
B.D. Stojanović ◽  
Z. Marinković ◽  
Elson Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Polymeric Precursor Method ◽  
Polymeric Precursor ◽  
Precursor Method ◽  
Force Microscopy ◽  
Dense Microstructure ◽  
Atomic Force ◽  
Current Characteristics

The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 (LSCO) by the polymeric precursor method were investigated. Atomic force microscopy indicates that the deposited films exhibit a dense microstructure with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the plate-like grains of the BLT films.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Processing and Characterization of Pure and Doped Ba0.6Sr0.4TiO3 Thin Films for Tunable Microwave Applications

2000 ◽  
Vol 656 ◽  
Author(s):  
P. C. Joshi ◽  
M. W. Cole ◽  
E. Ngo ◽  
C. W. Hubbard
Keyword(s):  
Thin Films ◽  
Dielectric Loss ◽  
Leakage Current ◽  
Microwave Devices ◽  
Silicon Substrates ◽  
Electrical Measurements ◽  
Bst Thin Films ◽  
Tunable Microwave ◽  
Current Characteristics ◽  
And Control

ABSTRACTBa1−xSrxTiO3 thin films are being developed for high-density DRAM devices. The nonlinearity of its dielectric properties with respect to applied dc voltage makes it attractive for tunable microwave devices. For successful integration into microwave devices, extremely reliable Ba1−xSrxTiO3 thin films with enhanced dielectric and insulating properties are desired. Properties of Ba1−xSrxTiO3are typically varied by changing the Ba/Sr ratio and/or doping. In this paper, we reports on the effects of acceptor and donor doping on the microstructural and electrical properties of Ba0.6Sr0.4TiO3 (BST) thin films deposited by metalorganic solution deposition technique on platinum coated silicon substrates. The effects of doping on structure, dielectric permittivity, dielectric loss tangent, and leakage current have been analyzed. The structure of the films was analyzed by x-ray diffraction (XRD). The surface morphology of the films was examined by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The electrical measurements were conducted on MIM capacitors using Pt as the top and bottom electrode. It was possible to significantly improve the dielectric loss and leakage current characteristics, and control the dielectric tunability by doping the BST thin films.

scholarly journals Improved Ferroelectric and Leakage Properties of Ce Doped in BiFeO3Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Alima Bai ◽  
Shifeng Zhao ◽  
Jieyu Chen
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Perovskite Structure ◽  
Ferroelectric Properties ◽  
Rare Metal ◽  
Orthorhombic Symmetry ◽  
Phase Structures ◽  
Multiferroic Bifeo ◽  
Symmetry Structure ◽  
Rhombohedral Symmetry

Ce doped BiFeO3thin films with a perovskite structure were prepared using solution-gelation method. It shows that the ferroelectric properties have been enhanced after doping Ce. The enhanced ferroelectric properties are attributed to the structural transformation and the reduced leakage current after doping rare metal of Ce. It has been found that the phase structures of the films transfer from rhombohedral symmetry structure to the coexistence of the tetragonal and orthorhombic symmetry structure. And Fe2+ions have been reduced, which leads to the decreased leakage for Ce doped BiFeO3thin films. The present work can provide an available way to improve the ferroelectric and leakage properties for multiferroic BiFeO3based thin films.

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